2SK2939(L), 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1053-0600 (Previous: ADE-208-562D) Rev.6.00 Sep 07, 2005 Features * Low on-resistance RDS =0.020 typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.6.00 Sep 07, 2005 page 1 of 8 2 3 S 2SK2939(L), 2SK2939(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID Ratings 60 20 35 140 35 35 105 50 150 -55 to +150 ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Rev.6.00 Sep 07, 2005 page 2 of 8 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 20 -- -- 1.5 -- -- 14 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.020 0.032 23 1100 540 200 15 180 175 195 0.95 40 Max -- -- 10 10 2.5 0.026 0.050 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 VNote4 ID = 15 A, VGS = 4 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10V, VGS = 0, f = 1MHz ID = 15 A, VGS = 10V, RL = 2 IF = 35 A, VGS = 0 IF = 35 A, VGS = 0 diF/ dt = 50 A/ s 2SK2939(L), 2SK2939(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 200 5 sh ot ) C 25 ) 1 (1 = Operation in this area is limited by RDS(on) 2 s m s c (T Drain Current ID (A) 10 m 0.5 Ta = 25C 50 100 150 0.2 0.1 200 3 10 30 100 Typical Output Characteristics Typical Transfer Characteristics 50 4.5 V VDS = 10 V Pulse Test Pulse Test Drain Current ID (A) 10 V 6V 5V 4V 30 3.5 V 20 VGS = 3 V 10 2 4 6 8 40 30 Tc = 75C 25C 20 -25C 10 0 10 1 2 3 4 5 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.8 0.6 ID = 20 A 0.4 10 A 0.2 5A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.6.00 Sep 07, 2005 page 3 of 8 Static Drain to Source on State Resistance RDS (on) () Drain to Source Voltage VDS (V) 1.0 0 1 Drain to Source Voltage VDS (V) 40 0 0.3 Case Temperature TC (C) 50 Drain Current ID (A) 10 s s 20 1 = n tio ra pe O 20 PW C 40 50 0 10 60 0 Drain to Source Saturation Voltage VDS (on) (V) 10 100 D Channel Dissipation Pch (W) 80 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 10 V 0.02 0.01 0.1 0.3 1 3 10 Drain Current ID (A) 30 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK2939(L), 2SK2939(S) 0.10 Pulse Test 0.08 0.06 0.04 20 A VGS = 4 V 5,10 A 0.02 5, 10,20 A 10 V 0 -40 0 40 80 120 160 Tc = -25C 25C 10 75C 5 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 5000 di / dt = 50 A / s VGS = 0, Ta = 25C 2000 Capacitance C (pF) 500 200 100 50 20 Ciss 1000 500 Coss 200 100 Crss 50 VGS = 0 f = 1 MHz 20 100 10 0.3 1 3 10 30 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 35 A VDD = 50 V 25 V 10 V 80 60 V DS 16 12 VGS 40 8 20 0 0 100 4 VDD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) Rev.6.00 Sep 07, 2005 page 4 of 8 0 100 1000 Switching Time t (ns) 10 0.1 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 20 Case Temperature TC (C) 1000 Drain to Source Voltage VDS (V) 50 td(off) 300 tf 100 tr 30 10 td(on) 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 2SK2939(L), 2SK2939(S) 40 30 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 50 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 5V VGS = 0, -5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 125 IAP = 35 A VDD = 25 V duty < 0.1 % Rg > 50 100 75 50 25 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 0 Rev.6.00 Sep 07, 2005 page 5 of 8 VDD 2SK2939(L), 2SK2939(S) Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 VDD = 30 V Vout 10% 10% 10% 90% td(on) Rev.6.00 Sep 07, 2005 page 6 of 8 tr 90% td(off) tf 2SK2939(L), 2SK2939(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 0.3 1.3 0.15 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.6.00 Sep 07, 2005 page 7 of 8 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 2.54 0.5 0.2 0.86 +- 0.1 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.37 0.2 1.3 0.2 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 1.7 SC-83 2.49 0.2 11.0 0.5 11.3 0.5 0.3 10.0 +- 0.5 (1.4) 4.44 0.2 10.2 0.3 0.2 0.86 +- 0.1 JEITA Package Code Unit: mm 2.2 2SK2939(L), 2SK2939(S) Ordering Information Part Name 2SK2939L-E 2SK2939STL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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