© 2004 IXYS All rights reserved
G = Gate D = Drain
S = Source TAB = Drain
DS99118B(07/04)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 µA 250 V
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 27 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
IXTQ 100N25P VDSS = 250 V
IXTK 100N25P ID25 = 100 A
IXTT 100N25P RDS(on) = 27 mΩΩ
ΩΩ
Ω
Advanced Technical Information
N-Channel Enhancement Mode
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-268 (IXTT)
GS
TO-264(SP) (IXTK)
GDS
D (TAB)
D (TAB)
GDS(TAB)
TO-3P (IXTQ)
G = Gate, D = Drain,
S = Source, TAB = Drain
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ250 V
VGSM ±20 V
ID25 TC= 25°C 100 A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 250 A
IAR TC= 25°C60A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 600 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-264 10 g
TO-268 5 g
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 56 S
Ciss 6300 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 pF
Crss 240 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 26 ns
td(off) RG = 3.3 Ω (External) 100 ns
tf28 ns
Qg(on) 185 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 43 nC
Qgd 91 nC
RthJC 0.21 K/W
RthCK TO-3P 0.21 K/W
RthCK TO-264 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. typ. Max.
ISVGS = 0 V 100 A
ISM Repetitive 250 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A 200 ns
-di/dt = 100 A/µs
QRM VR = 100 V 3.0 µC
TO-268 Outline
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
1 2 3
TO-264 Outline
TO-3P Outline
© 2004 IXYS All rights reserved
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
25
50
75
100
125
150
175
200
225
250
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10
V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
70
80
90
100
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
00.511.522.533.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS( on)
- Normalize
d
I
D
= 100A
I
D
= 50A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
90
100
110
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
R
DS(on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 125V
I
D
= 50A
I
G
= 10mA
Fig. 7. Input Admittance
0
25
50
75
100
125
150
44.555.5 66.577.5 8
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 25 50 75 100 125 150 175 200
I
D
- Amperes
g
fs
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4 0.6 0.8 1 1.2 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forward-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
V
DS
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2004 IXYS All rights reserved
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 13. Maximum Transient Therm al Resistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R(th)JC - ºC/W
