SMBT3904/ MMBT3904
1 Feb-18-2002
NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBT3904/ MMBT3904 s1A 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage VCBO 60
Emitter-base voltage VEBO 6
DC collector current IC200 mA
Total power dissipation, TS = 69 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
245 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
SMBT3904/ MMBT3904
2 Feb-18-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 60 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector cutoff current
VCB = 30 V, IE = 0
ICBO - - 50 nA
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
-
-
-
-
0.2
0.3
V
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
0.65
-
-
-
0.85
0.95
1) Pulse test: t ≤=300µs, D = 2%
SMBT3904/ MMBT3904
3 Feb-18-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz
fT300 - - MHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Ccb - - 4 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - - 8
Noise figure
IC = 100 µA, VCE = 5 V, RS = 1 k
,
f = 1 kHz,
f = 200 Hz
F- - 5 dB
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h11e 1 - 10 k
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h12e 0.5 - 8 10-4
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h21e 100 400 - -
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h22e 1 - 40
S
Delay time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
td- - 35 ns
Rise time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
tr- - 35
Storage time
VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA
tstg - - 200
Fall time
VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA
tf- - 50
SMBT3904/ MMBT3904
4 Feb-18-2002
Test circuits
Delay and rise time
EHN00061
275
10 k
+3.0 V
0-0.5 V
<4.0 pF
C
+10.9 V
D= 2%300 ns
<1.0 ns
Ω
Ω
Storage and fall time
EHN00062
275
10
+3.0 V
0
-9.1 <4.0 pF
C
+10.9 V
D= 2%
1N916
<1.0
t
1
µs50010 t
1
Ω
Ω
V
k
ns
<<
SMBT3904/ MMBT3904
5 Feb-18-2002
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
EHP00756
2
0V
BE sat
C
101
100
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
102
VBE
VCE
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00935
-6
0
10
5
D
=
5
101
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-1
10
totmax
tot
PDC
P
p
t
t
p
=
DT
t
p
T
DC current gain hFE = f (IC)
VCE = 10V, normalized
EHP00765
10
10 mA
h
C
5
FE
10
1
0
10
-1
5
10 10 10
-1 0 1 2
Ι
125 C
25 C
-55 C
55 2
SMBT3904/ MMBT3904
6 Feb-18-2002
Short-circuit forward current
transfer ratio h21e = f(IC)
VCE = 10V, f = 1MHz
EHP00759
10
10 mA
h
C
5
21e
10
3
2
101
5
10 10
-1 0 1
Ι
5
Open-circuit output admittance
h22e = f (IC)
VCE = 10V, f = 1MHz
EHP00760
10
10 mA
h
C
5
22e
10
2
1
100
5
10 10
-1 0 1
Ι
5
sµ
Delay time td = f (IC)
Rise time tr = f (IC)
EHP00761
10 mA
t
C
r
101
100
10 10
01 2
Ι
55
ns
r
t
td
,
3
10
d
t
102
103
= 3 V
CC
V
0 V
V= 2 V
BE
40 V
15 V
hFE = 10
Storage time tstg = f(IC)
EHP00762
10 mA
t
C
s
101
100
10 10
01 2
Ι
55
ns
3
10
102
103
hFE= 20
10
25 C
125 C
10
= 20
FE
h
SMBT3904/ MMBT3904
7 Feb-18-2002
Fall time tf = f (IC)
EHP00763
10 mA
t
C
f
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
h
FE
= 20
25 C
125 C
CC
V= 40 V
= 10
FE
h
Rise time tr = f (IC)
EHP00764
10 mA
t
C
r
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
25 C
125 C
CC
V= 40 V
= 10
FE
h
Input impedance
h11e = f (IC)
VCE = 10V, f = 1kHz
10
EHP00757
-1 1
10mA
-1
10
2
10
5
5
10 0
10 0
C
11e
h
Ι
1
10
5
Ω
k
Open-circuit reverse voltage
transfer ratio h12e = f (IC)
VCE = 10V, f = 1kHz
EHP00758
10 mA
h
C
12e
10-5
5
10 10
-1 0 1
Ι
5
10-4
10-3
