TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
T4-LDS-0132 Rev. 1 (091476) Page 1 of 4
DEVICES LEVELS
2N5151 2N5153 JAN
2N5151L 2N5153L JANTX
2N5151U3 2N5153U3 JANTXV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 5.5 Vdc
Collector Current IC 2.0 Adc
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TA = +25°C (3)
@ TC = +25°C (4)
PT 1.0
10
1.16
100
W
Operating & Storage Junction Temperature Range TJ , Tstg -65 to +200 °C
Thermal Resistance, Junction-to Case RθJC 10
1.75 (U3) °C/W
Note:
1) Derate linearly 5.7mW/°C for TA > +25°
2) Derate linearly 66.7mW/°C for TA > +25°
3) Derate linearly 6.63mW/°C for TA > +25°
4) Derate linearly 571mW/°C for TA > +25°
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc, IB = 0 V(BR)CEO 80 Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc, IC = 0
VEB = 5.5Vdc, IC = 0 IEBO
1.0
1.0
µAdc
mAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 0
VCE = 100Vdc, VBE = 0 ICES
1.0
1.0
µAdc
mAdc
Collector-Base Cutoff Current
VCE = 40Vdc, IB = 0 ICEO 50 µAdc
TO-5
2N5151L, 2N5153L
(See Figure 1)
TO-39 (TO-205AD)
2N5151, 2N5153
U-3
2N5151U3, 2N5153U3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
T4-LDS-0132 Rev. 1 (091476) Page 2 of 4
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5Vdc
IC = 2.5Adc, VCE = 5Vdc
IC = 5Adc, VCE = 5Vdc
2N5151
2N5153
2N5151
2N5153
2N5151
2N5153
hFE
20
50
30
70
20
40
90
200
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc VCE(sat) 0.75
1.5 Vdc
Base-Emitter Voltage Non-Saturation
IC = 2.5Adc, VCE = 5Vdc
VBE 1.45 Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc VBE(sat) 1.45
2.2 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500mAdc, VCE = 5Vdc, f = 10MHz 2N5151
2N5153
|hfe| 6
7
Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 1kHz 2N5151
2N5153
hfe 20
50
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
Cobo 250 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc
ton 0.5
μs
Turn-Off Time
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc
toff 1.5
μs
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
T4-LDS-0132 Rev. 1 (091476) Page 3 of 4
SWITCHING CHARACTERISTICS (cont .)
Parameters / Test Conditions Symbol Min. Max. Unit
Storage Time ts 1.4 μs
Fall Time
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc tf 0.5
μs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, tP = 1.0s
Test 1
VCE = 5.0Vdc, IC = 2.0Adc
Test 2
VCE = 32Vdc, IC = 310mAdc
Test 3
VCE = 80Vdc, IC = 14.5mAdc
FIGURE 1 (TO-5, TO-39)
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Symbol
Min Max Min Max
Notes
CD .305 .335 7.75 8.51 6
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TP 5.08 TP 7
LD .016 .021 0.41 0.53 8, 9
LL See notes 8, 9, 12, 13
LU .016 .019 0.41 0.48 8, 9
L1 .050 1.27 8, 9
L2 .250 6.35 8, 9
Q .050 1.27 6
TL .029 .045 0.74 1.14 4, 5
TW .028 .034 0.71 0.86 3
r .010 0.25 11
α 45° TP 45° TP 7
P .100 2.54
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
T4-LDS-0132 Rev. 1 (091476) Page 4 of 4
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4 TL measured from maximum HD.
5 Outline in this zone is not controlled.
6 CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7 Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
8 LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
9 All three leads.
10 The collector shall be electrically and mechanically connected to the case.
11 r (radius) applies to both inside corners of tab.
12 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13 For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum.
14 For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum.
15 Lead designation, depending on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 =
collector.
FIGURE 2 (U3)
PACKAGE DIMMENSIONS
Dimensions
Symbol Inches Millimeters
Min Max Min Max
BL .395 .405 10.04 10.28
BW .291 .301 7.40 7.64
CH .1085 .1205 2.76 3.06
LH .010 .020 0.25 0.51
LL1 .220 .230 5.59 5.84
LL2 .115
.125 2.93 3.17
LS1 .150 BSC 3.81 BSC
LS2 .075 BSC 1.91 BSC
LW1 .281
.291 7.14 7.39
LW2 .090
.100 2.29 2.54
Q1 .030 0.762
Q2 .030 0.762
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter
