© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/25/19
Thyristors
Surface Mount – 400V – 600V > NYC222, NYC226, NYC228
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ− 40 to +110°C, Sine Wave, 50 to 60 Hz)
NYC222
NYC226
NYC228 VDRM,
VRRM
50
400
600 V
On-State RMS Current (180° Conduction Angles; TC = 80°C) IT (RMS) 1.5 A
Average On−State Current, (TC = 65°C, f = 60 Hz, Time = 1 sec) IT (RMS) 2.0 A
Peak Non-repetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM 15 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s
Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TA = 25°C) PGM 0.5 W
Forward Average Gate Power (t = 8.3 msec, TA = 25°C) PGM (AV) 0.1 W
Forward Peak Gate Current (Pulse Width ≤ 1.0 s, TA = 25°C) IFGM 0.2 A
Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 µs, TA = 25°C) VRGM 5.0 V
Operating Junction Temperature Range @ Rated VRRM and VDRM TJ-40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted R8JA 156 mW
Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent
to Epoxy R8JT 25 °C/W
Maximum Device Temperature for Soldering Purposes for
10 Secs Maximum TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Electrical Characteristics - OFF (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Ty p Max Unit
†Peak Repetitive Blocking Current
(VAK = VDRM = VRRM; Gate Open) TJ = 25°C
TJ = 110°C IDRM,
IRRM
- - 1.0 µA
- - 200 mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Ty p Max Unit
Peak Forward On-State Voltage (Note 2) (ITM = 2.2 A Peak) VTM −1.2 1. 7 V
HGate Trigger Current (Note 3)
(VD = 12 V, RL = 100 Ω, TC = 25°C)
TC = 25°C IGT
_ 30 200 µA
TC =–40°C _ _ 500
Gate Trigger Voltage (dc) (Note 3)
(VAK = 7 Vdc, RL = 100Ω)
TC = 25°C VGT
– – 0.8 V
TC =–40°C – – 1.2
Gate Non−Trigger Voltage
(VAK = VDRM, RL = 100 Ω) TC = 110°C VGD 0.1 _ _ V
Holding Current
(VAK = 12 V, RGK = 1000 Ω)
Initiating Current = 200 mA
TC = 25°C IH
_ 2.0 5.0 V
TC =–40°C _ _ 10