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2N6283 an d 2N6 284
Available on
commercial
versions
NPN Darlington Power Silicon Transisto r
Qualified per MIL-PRF-19500/504
Quali f i ed Lev els:
JAN , JANTX, and
JANTXV
DESCRIPTION
This high speed NPN transis tor is rat ed at 20 amps and is mil itary qu al ified up to a JANTXV
level. This TO-204AA is olated pack age features a 180 degree lead orientation.
TO-204AA (TO-3)
Package
Important: For the latest infor mation, v isit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N6283 and 2N6284.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/504.
RoHS compliant versions available (com mercial grade only).
APPLICATIONS / BENE FITS
Military, space and other high reliability applications.
High frequency response.
TO-204AA case with i solated terminals.
MAXIMUM RATINGS @ TC = +25 oC unless otherwise noted
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Resistance Junction-to-Case
RӨJC
0.857
oC/W
Collector Current
IC
20
A
Collector-Emitter Voltage 2N6283
2N6284
VCEO 80
100
V
Collector-Base Voltage 2N6283
2N6284
VCBO 80
100
V
Emitter-Base Voltage
VEBO
7
V
Total Power Dissipation @ TC = +25
o
C
(1)
@ TC = +100
o
C
(2)
PT 175
87.5
W
Notes: 1. De rat e li near ly 1.17 W/oC above TC > +25 oC. (See Figure 1)
2. De rate li ne ar ly 0.875 W/oC above TC > +100 oC. (See Figure 1)
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M ECHANICAL and PACKAGING
CASE: Indus try standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins
FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750
method 2026.
POLARITY: NPN (see schematic)
MOUNTING HARDWARE : Consult factory for optional insulator and sheet metal screws
WEIGHT: Approximately 15 grams
See package dimensions on last page.
PART NOMENCLATURE
JAN 2N6283 (e3)
JAN = JA N Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Charac teristics
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
IB
Base cur rent: The value of the dc current into the base terminal .
IC
Collector current: The value of the dc current into the collector terminal.
IE
Emitter current: The value of the dc current into the em itter terminal.
TC
Cas e temp er ature: Th e temperature meas ured at a specifi ed location on the case of a de vice.
VCB
Collector-base voltage: The dc voltage between the collector and the base.
VCBO
Collector-base voltage, base open: The vol tage between the collec tor and base term inals when the emitter terminal is
open-circuited.
VCC
Collector-suppl y voltage: The supply voltage applied to a circuit connected to the collector.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VCEO Collector-emitter vol tage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base
VEBO Emitter-base voltage, collector open: The voltage between the emi tter and base terminals with the collector terminal
open-circuited.
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ELECTRI CAL CHARACTERISTICS @ TA = +25 oC un less otherwise noted
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mA
2N6283
2N6284
V(BR)CEO
80
100
V
Collector-Emitter Cutoff Current
VCE = 40 V
VCE = 50 V
2N6283
2N6284
ICEO
1.0
1.0
mA
Collector-Emitter Cutoff Current
VCE = 80 V, VBE = 1. 5 V
VCE = 100 V, VBE = 1. 5 V
2N6283
2N6284
ICEX
0.01
0.01
mA
Emitter-Base Cutoff Current
VEB = 7.0 V
IEBO
2.5 mA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 1.0 A, VCE = 3.0 V
IC = 10 A, VCE = 3.0 V
IC = 20 A, VCE = 3.0 V
hFE
1,500
1,250
500
18,000
Collector-Emitter Saturation Voltage
IC = 20 A, IB = 200 mA
IC = 10 A, IB = 40 mA
VCE(sat)
3.0
2.0
V
Base-Emitter Saturation Voltage
IC = 20 A, IB = 200 mA
VBE(sat) 4.0 V
Base-Emi tt er Voltag e N on-saturated
VCE = 3.0 V, IC = 10 A
VBE 2.8 V
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 A, VCE = 3.0 V, f = 1 kHz
hfe
700
Magn itude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 A, VCE = 3.0 V, f = 1 MHz
|hfe|
8
80
Output Capacitance
VCB = 10 V, IE = 0, f = 100 kHz f1 MHz
Cobo
350
pF
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ELECTRI CAL CHARACTERISTICS @ TC = 25 oC unles s otherwise noted. (c ont inued)
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 V, IC = 10 A; IB= 40 mA
ton
2.0
µs
Turn-Off Time
VCC = 30 V, IC = 10 A; IB1= IB2 = 40 mA
toff
10
µs
SAFE OPERATING AREA (See Figures 1 and 2 bel ow and MIL-STD-750,Test Method 3053)
DC Tests
TC = +25 °C, +10 ºC, -0 ºC, t ≥ 1 second, 1 Cycle
Test 1
VCE = 8.75 V, IC = 20 A
Test 2
VCE = 30 V, IC = 5.8 A
Test 3
VCE = 80 V, IC = 100 mA (2N6283)
VCE = 100 V, IC = 100 mA (2N6284)
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SAFE OPERATING AREA
VCE – Collector – Emitter Voltage – V
FIGURE 1
Maximum Safe Operating Area
(continuous dc)
I
C
– Collector Current – A
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SAFE OPERATING AREA (continued)
L Induc tance (Millihenries )
FIGURE 2
Safe Operating Area for Switching Between Saturation and Cutoff
(unclamped inductive load)
IC = Collector Current (Amperes)
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GRAPHS
TC (°C) (Case)
FIGURE 1
Temperature Power Derating Curve
DC Operation Maximum Rating (W)
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PACKAGE DIM ENSIONS
NOTES: 1. Dimensions are in inches. Millimeters are given for information only.
2. Millimeters are given for information only.
3. Body contour is optional within zone defined by CD.
4. These dim ensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. Wh en
gauge is not used, measurement shall be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. The collector shall be electrically connected to the case.
9. LD applies between L1 and LL. Lead diameter shall not exceed tw ice LD within L1.
10. The s eating plane of the header shall be flat within .001 inch (0.03 mm), concave to .004 inch (0.10 mm), convex inside a
.930 inch (23.62 mm) diameter circle on the center of the header, and flat within .001 inch (0 .03 mm) concave to .006 inch
(0.15 mm), convex overall .
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
-
0.875
-
22.23
3
CH
0.250
0.328
6.35
8.33
HR
0.495
0.525
12.57
13.34
HR1
0.131
0.188
3.33
4.78
6
HT
0.060
0.135
1.52
3.43
LD
0.038
0.043
0.97
1.09
4, 5, 9
LL
0.312
0.500
7.92
12.70
4, 5, 9
LL1
-
0.050
-
1.27
5, 9
MHD
0.151
0.161
3.84
4.09
7
MHS
1.177
1.197
29.90
30.40
PS
0.420
0.440
10.67
11.18
PS1
0.205
0.225
5.21
5.72
5
S1
0.655
0.675
16.64
17.15
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SCHEMATIC