BSS159N
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv/dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.23 A
TA=70 °C 0.18
Pulsed drain current ID,pulse TA=25 °C 0.92
Reverse diode dv/dtdv/dt
ID=0.23 A, VDS=60 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 0
Power dissipation Ptot TA=25 °C 0.36 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) see table on next page and diagram 11
Value
VDS 60 V
RDS(on),max 8Ω
IDSS,min 0.13 A
Product Summary
SOT-23
Type Package Pb-free Tape and Reel Information Marking
BSS159 PG-SOT-23 Yes L6327: 3000 pcs/reel SGs
BSS159 PG-SOT-23 Yes L6906: 3000 pcs/reel sorted in VGS
(
th
)
bands1) SGs
Rev. 1.32 page 1 2006-12-11
BSS159N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal characteristics RthJA minimal footprint - - 350 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=-10 V, ID=250 µA 60 - - V
Gate threshold voltage VGS(th) VDS=3 V, ID=26 µA -3.5 -2.8 -2.4
Drain-source cutoff current ID(off)
VDS=60 V,
VGS=-10 V, Tj=25 °C - - 0.1 µA
VDS=60 V,
VGS=-10 V, Tj=125 °C --10
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 10 nA
On-state drain current IDSS VGS=0 V, VDS=10 V 130 - - mA
Drain-source on-state resistance RDS(on) VGS=0 V, ID=0.07 A - 3.9 8 Ω
VGS=10 V, ID=0.16 A - 1.7 3.5
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.16 A 0.1 0.19 - S
Threshold voltage VGS(th) sorted in bands2)
J VGS(th) VDS=3 V, ID=26 µA -2.6 - -2.4 V
K -2.75 - -2.55
L -2.9 - -2.7
M -3.05 - -2.85
N -3.2 - -3
2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
Rev. 1.32 page 2 2006-12-11
BSS159N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -3344pF
Dynamic characteristics Coss - 8.3 11
Reverse transfer capacitance Crss - 3.9 5.9
Turn-on delay time td(on) - 3.1 4.7 ns
Rise time tr- 2.9 4.4
Turn-off delay time td(off) -913
Fall time tf-913
Gate Charge Characteristics
Gate to source charge Qgs - 0.14 0.21 nC
Gate to drain charge Qgd - 0.7 1.1
Gate charge total Qg- 2.2 2.9
Gate plateau voltage Vplateau - -0.14 - V
Reverse Diode
Diode continous forward current IS- - 0.20 A
Diode pulse current IS,pulse - - 0.81
Diode forward voltage VSD
VGS=-3 V, IF=0.16 A,
Tj=25 °C - 0.79 1.2 V
Reverse recovery time trr - 10.4 13 ns
Reverse recovery charge Qrr - 3.3 4.1 nC
VR=30 V, IF=0.16 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=-10 V, VDS=25 V,
f=1 MHz
VDD=25 V,
VGS=-3…7 V,
ID=0.16 A, RG=6 Ω
VDD=40 V, ID=0.16 A,
VGS=-3 to 5 V
Rev. 1.32 page 3 2006-12-11
BSS159N
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: D=tp/T
100 ms
100 µs
1 ms
10 ms
DC
102
101
100
101
100
10-1
10-2
10-3
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
103
102
101
100
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.04
0.08
0.12
0.16
0.2
0.24
0 40 80 120 160
TA [°C]
ID [A]
Rev. 1.32 page 4 2006-12-11
BSS159N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
0.1
0.2
0.3
0.4
0.5
0.6
-4 -3 -2 -1 0 1
VGS [V]
ID [A]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00 0.10 0.20 0.30
ID [A]
gfs [S]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
VDS [V]
ID [A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V 0.5 V
1 V
10 V
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5 0.6
ID [A]
RDS(on) [Ω]
Rev. 1.32 page 5 2006-12-11
BSS159N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.07 A; VGS=0 V VGS(th)=f(Tj); VDS=3 V; ID=26 µA
parameter: ID
11 Threshold voltage bands 12 Typ. capacitances
ID=f(VGS); VDS=3 V; Tj=25 °C C=f(VDS); VGS=-10 V; f=1 MHz
26 µA
J
K
LM
N
0.001
0.01
0.1
1
-3.5 -3 -2.5 -2
VGS [V]
ID [mA]
typ
98 %
0
4
8
12
16
20
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
typ
98 %
2 %
-4
-3.6
-3.2
-2.8
-2.4
-2
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
102
101
100
010203040
VDS [V]
C [pF]
Rev. 1.32 page 6 2006-12-11
BSS159N
13 Forward characteristics of reverse diode 15 Typ. gate charge
IF=f(VSD)VGS=f(Qgate); ID=0.16 A pulsed
parameter: Tjparameter: VDD
16 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
50
70
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0.2 VDS(max) 0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
6
012
Qgate [nC]
VGS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
0.001
0.01
0.1
1
0 0.4 0.8 1.2
VSD [V]
IF [A]
Rev. 1.32 page 7 2006-12-11
BSS159N
Package Outline:
Footprint: Packaging:
Dimensions in mm
Rev. 1.32 page 8 2006-12-11
BSS159N
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
A
ll Rights Reserved.
A
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical value
s
stated herein and/or any information regarding the application of the device, Infineon Technologies hereb
y
disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office
(
www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types i
n
question please contact your nearest Infineon Technologies Office
.
Infineon Technologies Components may only be used in life-support devices or systems with the express writte
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failur
e
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life suppor
t
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustai
n
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons ma
y
be endangered.
Rev. 1.32 page 9 2006-12-11