10BQ040TR - Vishay [Semiconductors]

Document Number: 94112 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 23-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

Schottky Rectifier, 1.0 A

VS-10BQ040PbF

Vishay Semiconductors

FEATURES

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long

term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-10BQ040PbF surface mount Schottky rectifier has

been designed for applications requiring low forward drop

and very small foot prints on PC boards. Typical

applications are in disk drives, switching power supplies,

converters, freewheeling diodes, battery charging, and

reverse battery protection.

PRODUCT SUMMARY

IF(AV) 1.0 A

VR40 V

SMB

Cathode Anode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Rectangular waveform 1.0 A

VRRM 40 V

IFSM tp = 5 μs sine 430 A

VF1.0 Apk, TJ = 125 °C 0.49 V

TJRange - 55 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-10BQ040PbF UNITS

Maximum DC reverse voltage VR40 V

Maximum working peak reverse voltage VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current IF(AV) 50 % duty cycle at TL = 112 °C, rectangular waveform 1.0 A

Maximum peak one cycle

non-repetitive surge current IFSM

5 μs sine or 3 μs rect. pulse Following any rated

load condition and with

rated VRRM applied

430

10 ms sine or 6 ms rect. pulse 45

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ

Repetitive avalanche current IAR

Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94112

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Jun-10

VS-10BQ040PbF

Vishay Semiconductors Schottky Rectifier, 1.0 A

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

Notes

(1) thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop

See fig. 1 VFM (1)

1 A TJ = 25 °C 0.53

2 A 0.70

1 A TJ = 125 °C 0.49

2 A 0.64

Maximum reverse leakage current

See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR

0.1 mA

TJ = 125 °C 4

Typical junction capacitance CTVR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 80 pF

Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH

Maximum voltage rate of charge dV/dt Rated VR10 000 V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage

temperature range TJ (1), TStg - 55 to 150 °C

Maximum thermal resistance,

junction to lead RthJL (2) DC operation 36

°C/W

Maximum thermal resistance,

junction to ambient RthJA 80

Approximate weight 0.10 g

0.003 oz.

Marking device Case style SMB (similar DO-214AA) V1F

dPtot

dTJ

------------- 1

RthJA

--------------<

Document Number: 94112 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 23-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

VS-10BQ040PbF

Schottky Rectifier, 1.0 A Vishay Semiconductors

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)

- Forward Voltage Drop (V)

- Instantaneous Forward

Current (A)

0.1

0.2 0.4 0.6 0.8 1.0

TJ = 25 °C

TJ = 150 °C

TJ = 125 °C

0.01

0.001

- Reverse Voltage (V)

- Reverse Current (mA)

0.0001

10 4020 30

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

0.1

515

25 35

1000

100

VR - Reverse Voltage (V)

CT - Junction Capacitance (pF)

4010 20 30

TJ = 25 °C

t1 - Rectangular Pulse Duration (s)

ZthJC - Thermal Impedance (°C/W)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

100

Single pulse

(thermal resistance)

PDM

Notes:

1. Duty factor D = t1/t2

2. Peak TJ = PDM x ZthJC + TC

D = 0.75

D = 0.33

D = 0.25

D = 0.20

D = 0.50

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94112

4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Jun-10

VS-10BQ040PbF

Vishay Semiconductors Schottky Rectifier, 1.0 A

Fig. 5 - Maximum Average Forward Current vs.

Allowable Lead Temperature

Fig. 6 - Maximum Average Forward Dissipation vs.

Average Forward Current

Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

F(AV)

- Average Forward Current (A)

Allowable Lead Temperature (°C)

100

130

160

00.4 0.8 1.2 1.6

See note (1)

Square wave (D = 0.50)

Rated VR applied

D = 0.20

D = 0.33

D = 0.50

D = 0.75

D = 0.25

110

120

140

150

IF(AV) - Average Forward Current (A)

Average Power Loss (W)

0.2

0.4

0.6

0.8

0 0.3 0.6 0.9 1.2 1.5

RMS limit

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

- Square Wave Pulse Duration (µs)

100

1000

IFSM - Non-Repetitive Surge Current (A)

10 100 1000 10 000

At any rated load condition and

with rated VRRM applied

following surge

Document Number: 94112 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 23-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5

VS-10BQ040PbF

Schottky Rectifier, 1.0 A Vishay Semiconductors

ORDERING INFORMATION TABLE

2- Current rating

3- B = Single lead diode

4- Q = Schottky “Q” series

5- Voltage rating (040 = 40 V)

6- None = Box (1000 pieces)

TR = Tape and reel (3000 pieces)

- PbF = Lead (Pb)-free

Device code

51324

VS- 10 B Q 040 TR PbF

1- HPP product suffix

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95017

Part marking information www.vishay.com/doc?95029

Packaging information Tape and reel www.vishay.com/doc?95034

Bulk www.vishay.com/doc?95397

SPICE model www.vishay.com/doc?95406

Document Number: 95017 For technical questions concerning discrete products, contact: diodes-tech@vishay.com www.vishay.com

Revision: 25-Jun-07 For technical questions concerning module products, contact: ind-modules@vishay.com 1

SMB

Outline Dimensions

Vishay High Power Products

DIMENSIONS in millimeters (inches)

3.80 (0.150)

3.30 (0.130)

4.70 (0.185)

4.10 (0.161)

2.15 (0.085)

1.80 (0.071)

2.40 (0.094)

1.90 (0.075)

1.30 (0.051)

0.76 (0.030)

0.30 (0.012)

0.15 (0.006)

5.60 (0.220)

5.00 (0.197)

4.0 (0.157)

2.0 TYP.

(0.079 TYP.)

2.5 TYP.

(0.098 TYP.)

Soldering pad

Polarity Part Number

4.2 (0.165)

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.