VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.8 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 m V Doc. No. 5SYA1224-03 Jan. 02 * Direct fiber optic control * Fast response (tdon < 3 s, tdoff < 6 s) * Precise timing ( tdoff < 800 ns) * Patented free floating silicon technology * Optimized low on-state and switching losses * Very high EMI immunity * Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage IDRM Repetitive peak off-state current VDClink Permanent DC voltage for 100 FIT failure rate Mechanical data 4500 V 20 mA 2800 V VGR 2V VD = VDRM 0 Tj 115 C. Ambient cosmic radiation at sea level in open air. (see Fig. 9) min. 10 kN max. 14 kN VGR 2V Fm Mounting force Dp Pole-piece diameter 34 mm 0.1 mm H Housing thickness 26 mm 0.5 mm m Weight IGCT Ds Surface creepage distance 33 mm Da Air strike distance 13 mm l Length IGCT 202.5 mm +0/-0.5 mm h Height IGCT 46.5 mm 1.0 mm w Width IGCT 200 mm +0/-0.5 mm 0.55 kg ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SHX 04D4502 GCT Data On-state (see Fig. 1) ITAVM Max. average on-state current 130 A Half sine wave, TC = 85 C ITRMS Max. RMS on-state current 205 A ITSM Max. peak non-repetitive surge current 2.1 kA tp = 10 ms 3.8 kA tp = 1 ms 3 2 tp = 10 ms 3 2 tp = 1 ms IT = 340 A IT = 100 - 500 A 23x10 A s I2t Limiting load integral VT On-state voltage VT0 Threshold voltage 1.8 V rT Slope resistance 4.7 m 7.3x10 A s 3.4 V Tj = 115 C After surge: VD = VR = 0V Tj = 115 C Turn-on switching di/dtcrit Max. rate of rise of on-state current tdon Turn-on delay time tr Rise time ton (min) Min, on-time Eon Turn-on energy per pulse f = 500 Hz Tj IT = 340 A VD = 3200 V 3 s VD = 2700 V 1 s IT = 340 A 10 s RS = 4.2 130 A/s 0.13 J CCL = 0.5 F Tj = = di/dt = Li 115 C 115 C 110 A/s = 25 H LCL = 1 H Turn-off switching (see Fig. 2, 3) ITGQM Max. controllable turn-off current 340 A tdoff Turn-off delay time tf Fall time toff (min) Min. off-time Eoff Turn-off energy per pulse Tj = 115 C 1 H VD = 2700 V LCL 6 s VD = 2700 V VDM 1 s Tj = 10 s VDM VDRM 1.35 J ITGQ = CCL = VDRM Rs = 4.2 Li = 25 H 0.5 F LCL 1 H 115 C ITGQM ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1224-03 Jan. 02 page 2 of 9 5SHX 04D4502 Diode Data On-state (see Fig. 4) IFAVM Max. average on-state current 85 A IFRMS Max. RMS on-state current 135 A IFSM Max. peak non-repetitive surge current 2.3 kA tp = 6 kA tp = 1 ms After surge: 3 2 tp = 10 ms VF = VR = 0V 3 2 tp = IF = 340 A IF = 100 - 500 A IF = 340 A VCL = 3200 V 2700 V 28x10 A s I2t Limiting load integral VF On-state voltage VF0 Threshold voltage 2.4 V rF Slope resistance 6.9 m 17.9x10 A s 4.8 V Half sine wave, TC = 85 C 10 ms Tj = 115 C 1 ms Tj = 115 C Turn-off switching (see Fig. 5, 6) di/dtcrit Max. rate of rise of on-state current Irr Reverse recovery current 190 A VCL = Err Turn-off energy 0.6 J di/dt = 130 A/s Tj = 115 C IF = 340 A 110 A/s Tj = 115 C Rs = 4.2 Li = 25 H CCL = 0.5 F LCL = 1 H Gate Unit Power supply (see Fig. 9 to 11) VGDC Gate Unit voltage 20 0.5 VDC PGin Gate Unit power consumption 11 W Without galvanic isolation to power circuit. fS = 500 Hz, ITGQ AV = 140 A, = 0.9 X1 Gate Unit power connector WAGO, Part Number 231-532/001-000 Note 3 Optical control input/output (see Fig. 9 to 11) Note 1 Pon CS Optical input power > -20 dBm Valid for 1mm plastic optical fibre Poff CS Optical noise power < -45 dBm (POF) tGLITCH Pulse width threshold 500 ns CS Receiver for command signal Max. pulse width without response Agilent, Type HFBR-2528 Note 2 Note 1: WAGO, www.wago.com Note 2: Agilent Technologies, www.semiconductor.agilent.com Note 3: Do not disconnect or connect fiber optic cables while light is on. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1224-03 Jan. 02 page 3 of 9 5SHX 04D4502 Thermal Tjop Operating junction temperature range 0...115 C Tstg Storage temperature range -40...60 C Tamb Ambient operational temperature range 0...60 C Thermal resistance junction to case RthJC GCT Diode not dissipating 70 K/kW Double side cooled RthJC Diode GCT not dissipating 90 K/kW Thermal resistance case to heatsink RthCH GCT Diode not dissipating 16 K/kW Double side cooled RthCH Diode GCT not dissipating 16 K/kW ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1224-03 Jan. 02 page 4 of 9 5SHX 04D4502 GCT Part E off [J] 1.5 IT [A] Tj = 115 C 600 Tj = 115C 500 1.0 400 VD = 2700V 300 200 0.5 100 0 2.0 Fig. 1 2.5 3.0 3.5 4.0 4.5 VT [V] 0.0 0 GCT on-state characteristics. Fig. 2 100 200 300 400 ITGQ [A] GCT turn-off energy per pulse vs. turn-off current. ITGQ [A] 500 Tj = 0..115 C V DM V DRM V RM V RRM 400 Li = 25 H CCL = 0.5 F LCL = 1.0 H Rs = 4.2 300 200 100 0 0 1000 2000 3000 4000 VD [V] Fig. 3 Max. repetitive GCT turn-off current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1224-03 Jan. 02 page 5 of 9 5SHX 04D4502 Diode Part IF [A] Err [J] 600 0.7 Tj = 115C Tj = 115C diF/dt = 110 A/s 0.6 500 VD = 2700 V 0.5 400 0.4 300 0.3 200 0.2 100 0.1 0 0.0 2.5 Fig. 4 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VF [V] Diode on-state characteristics. 0 Fig. 5 200 300 400 IFQ [A] Diode turn-off energy per pulse vs. turn-off current. IFQ [A] Irr [A] 250 500 Tj = 115C diF/dt = 110 A/s Tj = 0 - 115C VD = 2700 V diF/dt = 110 A/s 200 400 150 300 100 200 50 100 0 0 0 Fig. 6 100 100 200 300 0 400 IFQ [A] Diode reverse recovery current vs. turn-off current. VDM VDRM Fig. 7 1000 2000 3000 4000 VD [V] Max. repetitive diode forward current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1224-03 Jan. 02 page 6 of 9 5SHX 04D4502 PGin [W] 25 fs = 1000 Hz fs = 500 Hz fs = 50 Hz 20 15 10 5 0 0 Fig. 8 50 100 150 200 ITGQ ave [A] Gate Unit power consumption. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1224-03 Jan. 02 page 7 of 9 5SHX 04D4502 Fig. 9 Device Outline Drawing. RC-IGCT Gate Unit X 1 Supply (20VDC) RC-GCT Internal Supply (without galvanic isolation to power circuit) TurnOn Circuit CS Fig. 10 Command Signal (Light) Rx Logic Monitoring TurnOff Circuit Anode Gate Cathode Block diagram. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1224-03 Jan. 02 page 8 of 9 5SHX 04D4502 1 Turn-on Turn-off di/dt ITM VD VDM VDSP VD IT IT 0.9 VD 0.8 ITGQ CS CS 0.05 VD 0.1 VD 0.3 ITGQ VG tdon tdoff VG tf tr Fig. 11 General current and voltage waveforms with IGCT-specific symbols. Li LCL DUT Rs VLC GCT - part CCL DUT Diode - part Fig. 12 LLoad Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1224-03 Jan. 02