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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 70 V
BVCES IC = 50 mA 70 V
BVEBO IE = 5.0 mA 4.0 V
ICBO VCB = 50 V 10 mA
hFE VCE = 5.0 V IC = 5.0 A 10 ---
PG
η
ηη
ηC VCC = 50 V POUT = 150 W f = 1090 MHz 7.8
35 9.8
40 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1150MB
DESCRIPTION:
The ASI MRF1150MB is Designed
for Class B and C, TACAN, IFF, and
DME Applications up to 1090 MHz.
FEATURES:
• Class B and C Operation
• Common Base
• PG = 7.8 dB at 150 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 12 A
VCB 70 V
PDISS 583 W @ TC = 25°C
TJ -65 OC to +200 °C
TSTG -65 OC to +150 °C
θ
θθ
θJC 0.3 OC/W
PACKAGE STYLE .280 4L PILL
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.05 5 / 26. 8 0
DIM
.220 / 5.59 .230 / 5.84
.118 / 3.00
D
EF
ØB
ØC
A
B
B
C E