Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package * Lowest figure of merit RON x Qg * Ultra low gate charge V DS @Tjmax 550 V R DS(on),max 0.520 13 nC Q g,typ * Extreme dv/dt rated * High peak current capability * Pb-free lead plating; RoHS compliant * Quailfied according to JEDEC1) for target applications PG-TO252 CoolMOS CP is designed for: * Hard- & Softswitching SMPS topologies * DCM PFC for Lamp ballast * PWM for Lamp Ballast, PDP and LCD TV Type Package Marking IPD50R520CP PG-TO252 5R520P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 7.1 T C=100 C 4.5 Pulsed drain current2) I D,pulse T C=25 C 15 Avalanche energy, single pulse E AS I D=2.5 A, V DD=50 V 166 Avalanche energy, repetitive t AR2),3) E AR I D=2.5 A, V DD=50 V 0.25 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Rev. 2.1 Unit A mJ 2.5 A V DS=0...400 V 50 V/ns static 20 V AC (f >1 Hz) 30 T C=25 C 66 W -55 ... 150 C page 1 2008-04-10 IPD50R520CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 3.8 T C=25 C A 15 15 V/ns Values Unit min. typ. max. - - 1.9 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 C V K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 A 500 - - Gate threshold voltage V GS(th) V DS=V GS, I D=0.25 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=500 V, V GS=0 V, T j=25 C - - 1 V DS=500 V, V GS=0 V, T j=150 C - 10 - A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=3.8 A, T j=25 C - 0.47 0.52 V GS=10 V, I D=3.8 A, T j=150 C - 1.2 - f =1 MHz, open drain - 2.2 - Gate resistance Rev. 2.1 RG page 2 2008-04-10 IPD50R520CP Parameter Values Symbol Conditions Unit min. typ. max. - 680 - - 31 - - 29 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related6) C o(er) Effective output capacitance, time related7) C o(tr) - 63 - Turn-on delay time t d(on) - 35 - Rise time tr - 14 - Turn-off delay time t d(off) - 80 - Fall time tf - 17 - Gate to source charge Q gs - 3 - Gate to drain charge Q gd - 5 - Gate charge total Qg - 13 17 Gate plateau voltage V plateau - 5.2 - V - 0.9 1.2 V - 240 - ns - 1.6 - C - 13 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 400 V V DD=400 V, V GS=10 V, I D=3.8 A, R G=48.3 ns Gate Charge Characteristics V DD=400 V, I D=3.8 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=3.8 A, T j=25 C V R=400 V, I F=I S, di F/dt =100 A/s 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) I SDI D, di /dt 400A/s, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 page 3 2008-04-10 IPD50R520CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 C; D =0 parameter: t p 102 70 60 limited by on-state resistance 1 s 50 40 10 s 100 s I D [A] P tot [W] 10 1 1 ms 30 10 ms 100 DC 20 10 10-1 0 0 25 50 75 100 125 150 100 175 101 T C [C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z(thJC)=f(tp); I D=f(V DS); T j=25 C parameter: D=t p/T parameter: V GS 101 20 20 V 10 V 8V 15 100 0.5 7V I D [A] Z thJC [K/W] 0.2 0.1 0.05 6V 10 0.02 10 -1 0.01 5.5 V single pulse 5 5V 4.5 V 10 -2 10-5 0 10-4 10-3 10-2 10-1 100 t p [s] Rev. 2.1 0 5 10 15 20 V DS [V] page 4 2008-04-10 IPD50R520CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 C R DS(on)=f(I D); T j=150 C parameter: V GS parameter: V GS 2 12 20 V 6.5 V 10 V 1.9 8V 10 7V 10 V 6V 1.8 6V 7V 1.7 8 5.5 V R DS(on) [] I D [A] 5.5 V 6 1.6 1.5 5V 1.4 4 1.3 4.5 V 2 1.2 1.1 0 0 5 10 15 20 0 25 2 4 6 V DS [V] 8 10 12 14 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=3.8 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 25 1.4 1.3 25 C 1.2 20 1.1 15 0.9 I D [A] R DS(on) [] 1 0.8 0.7 150 C 10 98 % typ 0.6 0.5 5 0.4 0.3 0.2 0 -60 -20 20 60 100 140 180 T j [C] Rev. 2.1 0 2 4 6 8 10 V GS [V] page 5 2008-04-10 IPD50R520CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=3.8 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 9 8 150 C 120 V 7 10 25 C, 98% 150 C, 98% 1 25 C 400 V I F [A] V GS [V] 6 5 4 100 3 2 1 10-1 0 0 5 10 0 15 0.5 1 Q gate [nC] 1.5 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=2.5 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 580 150 560 125 540 V BR(DSS) [V] 175 E AS [mJ] 100 75 520 500 50 480 25 460 0 440 25 75 125 175 T j [C] Rev. 2.1 2 V SD [V] -60 -20 20 60 100 140 180 T j [C] page 6 2008-04-10 IPD50R520CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 4 104 3 Ciss 102 E oss [J] C [pF] 103 Coss 101 2 1 Crss 100 0 0 100 200 300 400 500 V DS [V] Rev. 2.1 0 100 200 300 400 500 V DS [V] page 7 2008-04-10 IPD50R520CP Definition of diode switching characteristics Rev. 2.1 page 8 2008-04-10 IPD50R520CP PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21 (D-PAK) Rev. 2.1 page 9 2008-04-10 IPD50R520CP Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2008-04-10