DATA SH EET
Product data sheet 2003 Nov 07
DISCRETE SEMICONDUCTORS
PMBD7100
High-speed double diode
db
ook, halfpage
M3D088
2003 Nov 07 2
NXP Semiconductors Product data sheet
High-speed double diode PMBD7100
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage: max. 100 V
•Repetitive peak reverse voltage: max. 100 V
•Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•High-speed s witching in thick and thin-film circuits.
DESCRIPTION
The PMBD7100 consists of two high-speed switching
diodes with common cathodes , fabric ated in planar
technology, and encapsulated in the small SOT23 SMD
plastic pack ag e.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
PMBD7100 *3A
PIN DESCRIPTION
1anode (a1)
2anode (a2)
3common connection
handbook, halfpage
21
3
Top view
MAM383
2
1
3
Fig.1 Simplified outline (SOT23 ) and symbo l .
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMBD7100 −plastic surface mounted package; 3 leads SOT23
2003 Nov 07 3
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7100
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −100 V
VRcontinuous revers e voltage −100 V
IFcontinuous forward current single diode loaded; see Fig.2; note 1 −215 mA
double diode loaded; see Fig.2; note 1 −125 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs−4 A
tp = 1 ms −1 A
tp = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
2003 Nov 07 4
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7100
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 50 mA 1 V
IF = 150 mA 1.25 V
IRreverse current see Fig.5
VR = 25 V 30 nA
VR = 100 V 2.5 µA
VR = 25 V; Tj = 150 °C60 µA
VR = 100 V; Tj = 150 °C100 µA
Cddiode capacit an ce VR = 0 V; f = 1 MHz; see Fig.6 1.5 pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
4ns
Vfr forward recove ry voltage when switched from IF = 10 m A to tr = 20 nA;
see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2003 Nov 07 5
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7100
GRAPHICAL DATA
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a func tion of ambient
temperature.
handbook, halfpage
0 0.5 1.0 2.0
300
0
100
200
1.5
MDB820
250
150
50
IF
(mA)
VF (V)
(1) (2) (3)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
2003 Nov 07 6
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7100
handbook, halfpage
200100500 150
MDB821
102
10
1
10-1
10-2
10−3
IR
(µA)
Tj (°C)
(1)
(2) (3)
Fig.5 Reverse current as a fun ction of junc tion
temperature.
(1) VR = 100 °C; maximum values.
(2) VR = 100 °C; typical values.
(3) VR = 25 °C; typical values.
handbook, halfpage
0 5 10 15
0.8
0.6
0.2
0
0.4
MDB822
Cd
(pF)
VR (V)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
2003 Nov 07 7
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7100
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very voltage test circuit and waveforms.
(1) IR = 1 mA.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
Fig.8 Forward recovery voltage test circuit and waveforms.
2003 Nov 07 8
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7100
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Nov 07 9
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7100
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reason ably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any incons istency or conflict betwee n information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or co ntract, is believed to b e a ccur ate a nd reliable and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other ind us trial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands R76/01/pp10 Date of release: 2003 Nov 07 Document orde r number: 9397 750 12001
