1
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0 ULapproved(E83335)
初步数据/PreliminaryData
J
VCES = 1200V
IC nom = 160A / ICRM = 320A
典型应用 TypicalApplications
• •太阳能应用 SolarApplications
电气特性 ElectricalFeatures
• •高速IGBTH3 HighSpeedIGBTH3
• •低开关损耗 LowSwitchingLosses
• •thinQH碳化硅肖特基二极管1200V thinQHSiCSchottkydiode1200V
机械特性 MechanicalFeatures
• •低热阻的三氧化二铝（Al2O3衬底 Al2O3SubstratewithLowThermalResistance
• •集成NTC温度传感器 IntegratedNTCtemperaturesensor
• •紧凑型设计 Compactdesign
• •PressFIT压接技术 PressFITContactTechnology
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode Digit
ModuleSerialNumber 1-5
ModuleMaterialNumber 6-11
ProductionOrderNumber 12-19
Datecode(ProductionYear) 20-21
Datecode(ProductionWeek) 22-23
2
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
旁路二极管/Bypass-Diode
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 50 A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A
正向浪涌电流
Surgeforwardcurrent tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C IFSM 450
360 A
A
I2t-值
I²t-value tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C I²t 1000
650 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage Tvj = 150°C, IF = 30 A VF0,95 V
反向电流
Reversecurrent Tvj = 150°C, VR = 1200 V IR0,10 mA
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,80 1,05 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,80 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op °C
反极性保护二极管A/Inverse-polarityprotectiondiodeA
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 30 A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A
正向浪涌电流
Surgeforwardcurrent tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C IFSM 290
245 A
A
I2t-值
I²t-value tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C I²t 420
300 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage Tvj = 150°C, IF = 20 A VF1,00 V
反向电流
Reversecurrent Tvj = 150°C, VR = 1200 V IR0,10 mA
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,20 1,35 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,15 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op °C
3
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
IGBT,斩波器/IGBT-Chopper
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1200 V
集电极电流
Implementedcollectorcurrent ICN 40 A
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC20
50 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 80 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 190 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
VCE sat
1,55
1,70
1,75
1,70
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25°C VGEth 5,0 5,8 6,5 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,32 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 0,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 2,35 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,13 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 20 A, VCE = 600 V
VGE = ±15 V
RGon = 12 Ω
td on
0,025
0,025
0,028
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 20 A, VCE = 600 V
VGE = ±15 V
RGon = 12 Ω
tr
0,01
0,012
0,012
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 20 A, VCE = 600 V
VGE = ±15 V
RGoff = 12 Ω
td off
0,25
0,32
0,35
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 20 A, VCE = 600 V
VGE = ±15 V
RGoff = 12 Ω
tf
0,016
0,023
0,025
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 20 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 1800 A/µs (Tvj = 150°C)
RGon = 12 ΩEon
0,26
0,32
0,35
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 20 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C)
RGoff = 12 ΩEoff
0,80
1,20
1,40
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt ISC
130
A
Tvj = 150°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,55 0,65 K/W
4
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,55 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
Diode-斩波器/Diode-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
连续正向直流电流
ContinuousDCforwardcurrent IF15 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 30 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 20,5 A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V VF
1,60
2,20
1,95
V
V
Tvj = 25°C
Tvj = 125°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 15 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 600 V IRM
5,00
5,00
A
A
Tvj = 25°C
Tvj = 125°C
恢复电荷
Recoveredcharge IF = 15 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 600 V Qr
0,15
0,25
µC
µC
Tvj = 25°C
Tvj = 125°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 15 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 600 V Erec
0,03
0,03
mJ
mJ
Tvj = 25°C
Tvj = 125°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,05 1,20 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,80 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues min. typ. max.
额定电阻值
Ratedresistance TC = 25°C R25 5,00 kΩ
R100偏差
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
耗散功率
Powerdissipation TC = 25°C P25 20,0 mW
B-值
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-值
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-值
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
5
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) Al2O3
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 11,5
6,3 mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 10,0
5,0 mm
相对电痕指数
Comperativetrackingindex CTI > 200
min. typ. max.
杂散电感,模块
Strayinductancemodule LsCE 20 nH
储存温度
Storagetemperature Tstg -40 125 °C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp F 40 - 80 N
重量
Weight G36 g
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt
The current under continuous operation is limited to 25A rms per connector pin.
Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products Supplied by Infineon Technologies)
Designed for climate conditions without condensation or precipitation
6
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
正向偏压特性旁路二极管（典型)
forwardcharacteristicofBypass-Diode(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2
0
5
10
15
20
25
30
35
40
45
50
55
60
Tvj = 25°C
Tvj = 150°C
正向偏压特性反极性保护二极管A（典型)
forwardcharacteristicofInverse-polarityprotectiondiodeA
(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4
0
5
10
15
20
25
30
35
40
Tvj = 25°C
Tvj = 150°C
输出特性IGBT,斩波器（典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
5
10
15
20
25
30
35
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
输出特性IGBT,斩波器（典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
Tvj=150°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
5
10
15
20
25
30
35
40
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
7
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
传输特性IGBT,斩波器(典型)
transfercharacteristicIGBT-Chopper(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11
0
5
10
15
20
25
30
35
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开关损耗IGBT,斩波器（典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=12Ω,RGoff=12Ω,VCE=600V
IC [V]
E [mJ]
0 5 10 15 20 25 30 35 40
0,0
0,5
1,0
1,5
2,0
2,5
3,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
开关损耗IGBT,斩波器（典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=20A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
瞬态热阻抗IGBT,斩波器
transientthermalimpedanceIGBT-Chopper
ZthJH=f(t)
t [s]
ZthJH [K/W]
0,001 0,01 0,1 1 10
0,01
0,1
1
10
ZthJH : IGBT
i:
ri[K/W]:
τi[s]:
1
0,051
0,0005
2
0,117
0,005
3
0,426
0,05
4
0,506
0,2
8
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
反偏安全工作区IGBT,斩波器（RBSOA）
reversebiassafeoperatingareaIGBT-Chopper(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=12Ω,Tvj=150°C
t [s]
IC [A]
0 200 400 600 800 1000 1200 1400
0
10
20
30
40
50
60
70
80
90
100
IC, Modul
IC, Chip
正向偏压特性Diode-斩波器（典型)
forwardcharacteristicofDiode-Chopper(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,5 1,0 1,5 2,0 2,5
0
3
6
9
12
15
18
21
24
27
30
Tvj = 25°C
Tvj = 125°C
开关损耗Diode-斩波器（典型)
switchinglossesDiode-Chopper(typical)
Erec=f(IF)
RGon=12Ω,VCE=600V
IF [A]
E [mJ]
0 5 10 15 20 25 30
0,00
0,02
0,04
Erec, Tvj = 125°C
开关损耗Diode-斩波器（典型)
switchinglossesDiode-Chopper(typical)
Erec=f(RG)
IF=15A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120
0,00
0,02
0,04
Erec, Tvj = 125°C
9
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
瞬态热阻抗Diode-斩波器
transientthermalimpedanceDiode-Chopper
ZthJH=f(t)
t [s]
ZthJH [K/W]
0,001 0,01 0,1 1 10
0,1
1
10
ZthJH : Diode
i:
ri[K/W]:
τi[s]:
1
0,23
0,0005
2
0,397
0,005
3
0,721
0,05
4
0,503
0,2
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
TC [°C]
R[Ω]
0 20 40 60 80 100 120 140 160
100
1000
10000
100000
Rtyp
10
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
In fin e o n
11
技术信息/TechnicalInformation
DF160R12W2H3F_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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