Data Sheet Switching Diode DAP202UM Applications High speed switching Dimensions (Unit : mm) Land size figure (Unit : mm) 0.90.1 2.00.1 +0.1 0.32 -0.05 Each lead has same dimensions Construction Silicon epitaxial planer 00.1 (1) 0.530.1 0.425 2.10.1 1.250.1 0.530.1 (3) 0.425 Features 1)Small mold, flat lead type. (UMD3F) 2)High reliability (2) 0.65 0.65 Structure 0.130.05 1.30.1 ROHM : UMD3F dot (year week factory) 2.40.08 00.5 4.00.1 0.50.05 1.150.1 2.20.08 Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Rated in slash put frequency f Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage 0.30.1 8.00.2 4.00.1 3.50.05 2.00.05 5.50.2 1.550.05 1.750.1 Taping dimensions (Unit : mm) Limits 80 80 300 100 4 200 150 - 55 to +150 100 Unit V V mA mA A mW/Total C C MHz Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current Capacitance between terminals IR - - 0.1 A VR=70V Ct - - 3.5 pF Reverse recovery time trr - - 4.0 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.09 - Rev.A Data Sheet DAP202UM 100000 100 Ta=150C Ta=125C 10000 Ta=150C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 10 Ta=75C 1 Ta=125C 0.1 Ta=25C 0.01 1000 Ta=75C 100 Ta=25C 10 1 0.1 0.001 0 0 100 200 300 400 500 600 700 800 900 1000 10 20 30 40 50 10 70 80 910 f=1MHz Ta=25C IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) 900 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 890 880 AVE:884mV 870 860 850 0.1 0 5 10 15 20 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 50 Ta=25C VR=70V n=30pcs 30 20 AVE:11nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 40 Ta=25C VR=0V f=1MHz n=10pcs 9 10 8 7 6 AVE:5.03pF 5 4 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.09 - Rev.A Data Sheet DAP202UM 50 20 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) IF=IR=100mA Irr=0.1*IR 1cyc IFSM 15 8.3ms 10 AVE:2.50A 5 40 30 20 AVE:19.3ns 10 0 0 trr DISPERSION MAP IFSM DISPERSION MAP 5 100 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 4 8.3ms 1cyc 3 2 IFSM t 10 1 1 0 1 10 0.1 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 Rth(j-a) ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THERMAL IMPEDANCE:Rth (C/W) 9 Rth(j-c) 100 Mounted on epoxy board IF=10A IM=100mA 8 7 6 5 4 AVE:2.98kV 3 AVE:1.47kV 2 1ms time 1 300us 10 0.001 0 0.01 0.1 1 10 100 C=100pF R=1.5k 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0 3/3 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A