SOT23 NPN PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 1995
PARTMARKING DETAILS BCW71 K1
BCW72 K2
BCW71R K4
BCW72R K5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 200 mA
Continuous Collector Current IC100 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
ICBO 100
10
nA
µA
IE=0, VCB
=20V
IE=0,
VCB
=20V,Tj=100°C
Base-Emitter Voltage VBE 550 700 mV IC=2.0mA, VCE
=5V
Collector-Emitter Saturation
Voltage
VCE(sat) 120
210
250 mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
Base-Emitter Saturation
Voltage
VBE(sat) 750
850
mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
Static Forward BCW71
Current Transfer
Ratio BCW72
hFE 110
90
220
IC =10µA, VCE
=5V
IC =2mA, VCE
=5V
200
150
450
IC =10µA, VCE
=5V
IC =2mA, VCE
=5V
Transition Frequency fT300 MHz IC =10mA, VCE
=5V
f =35MHz
Collector Capacitance CTC 4pFI
E =Ie =0, VCB
=10V
f =1MHz
Noise Figure N 10 dB IC =200µA, VCE
=5V
RS =2KΩ, f =1KHz
B =200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for these devices
BCW71
BCW72
PAGE NO
C
B
E
SOT23
C
B
E
DIM Millimeters Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C 1.10 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.37
BCW71
BCW72
SOT23 NPN PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 1995
PARTMARKING DETAILS BCW71 K1
BCW72 K2
BCW71R K4
BCW72R K5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 200 mA
Continuous Collector Current IC100 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
ICBO 100
10
nA
µA
IE=0, VCB
=20V
IE=0,
VCB
=20V,Tj=100°C
Base-Emitter Voltage VBE 550 700 mV IC=2.0mA, VCE
=5V
Collector-Emitter Saturation
Voltage
VCE(sat) 120
210
250 mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
Base-Emitter Saturation
Voltage
VBE(sat) 750
850
mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
Static Forward BCW71
Current Transfer
Ratio BCW72
hFE 110
90
220
IC =10µA, VCE
=5V
IC =2mA, VCE
=5V
200
150
450
IC =10µA, VCE
=5V
IC =2mA, VCE
=5V
Transition Frequency fT300 MHz IC =10mA, VCE
=5V
f =35MHz
Collector Capacitance CTC 4pFI
E =Ie =0, VCB
=10V
f =1MHz
Noise Figure N 10 dB IC =200µA, VCE
=5V
RS =2KΩ, f =1KHz
B =200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for these devices
BCW71
BCW72
PAGE NO
C
B
E
SOT23
C
B
E
DIM Millimeters Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C 1.10 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.37
BCW71
BCW72
