© Semiconductor Components Industries, LLC, 1997
November, 2018 − Rev. 13
1Publication Order Number:
BAS70−04LT1/D
BAS70-04L
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
•Extremely Fast Switching Speed
•Low Forward Voltage
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating Symbol Value Unit
Forward Current IF70 mA
Non−Repetitive Peak Forward Surge
Current (t ≤ 1.0 s)
IFSM 100 mA
Reverse Voltage VR70 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
Thermal Resistance − Junction−to−Ambient
(Note 1)
(Note 2)
RqJA 508
311
°C/W
Operating Junction and Storage
Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
70 VOLTS SCHOTTKY
BARRIER DIODE
Device Package Shipping†
ORDERING INFORMATION
SOT−23 (TO−236)
CASE 318
STYLE 11
1
2
3
MARKING DIAGRAM
CG = Specific Device Code
M = Date Code*
G= Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BAS70−04LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
CG M G
G
SBAS70−04LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
www.onsemi.com
ANODE
1
CATHODE
2
3
CATHODE/ANODE
BAS70−04L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage
(IR = 10 μA)
V(BR)R
70 −
V
Total Capacitance
(VR = 0 V, f = 1.0 MHz)
CT
−2.0
pF
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
IR
−
−
0.1
10
mA
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 15 mA)
VF
−
−
−
410
750
1000
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
100
0 0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5.0 10 15 20 50
1.4
0
VR, REVERSE VOLTAGE (VOLTS)
1.2
0.4
0.2
0
CT, CAPACITANCE (pF)
5.0 10 15 50
IF, FORWARD CURRENT (mA)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40°C
25°C
TA = 150°C
25°C
IR, REVERSE CURRENT (μA)
1.0
-55°C
125°C
150°C
100
25
20
0.6
0.8
1.0
0.6 0.7
125°C
85°C
30 35 40 45
25 30 35 40 45
0.8 0.9
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT−23 (TO−236)
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