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Dim Min Max Min Max
A 24.7 25.3 0.972 0.996
B 14.7 15.3 0.579 0.602
C — 4.0 — 0.157
D 17.0 18.0 0.669 0.709
E 3.3 3.7 0.130 0.146
G 3.1Ø 3.4Ø 0.12Ø 0.13Ø
H 1.05 1.45 0.041 0.057
J 1.7 2.1 0.067 0.083
K 0.9 1.1 0.035 0.043
L 1.5 1.9 0.059 0.075
M 4.8 5.16 0.189 0.203
N 3.8 4.4 0.150 0.173
P 7.3 7.7 0.287 0.303
R 9.3 9.7 0.366 0.382
S 3.4 3.9 0.134 0.154
T 0.6 0.8 0.024 0.031
In mm In inch
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1.0
10
100
0.2
0.0 0.6 1.0 1.8
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2TypicalFwdCharacteristics, per element
F
T = 25 C
j°
Pulse width = 300 sµ
1.4
0
40
80
120
160
110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T=25C
j°
Single half-sine-wave
(JEDEC method)
0
0
2
4
6
25 50 75 100 125 150
I , AVERAGE RECTIFIED CURRENT (A)
O
T,TEMPERATURE(C)
Fig.1ForwardCurrentDeratingCurve
°
Resistive or
Inductive load
3
5
1
Heatsink
10
100
1
1 10 100
C , JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
f = 1.0MHz
T=25C
j°
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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