FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5018
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE 75Ω
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 200°C
Junction Operating Temperature -55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation 500mW
Maximum Currents
Gate Current -50mA
Maximum Voltages
Gate to Drain 30V
Gate to Source 30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5018 2N5019
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX UNITS CONDITIONS
BVGSS Gate to Source Breakdown Voltage 30 30 IG = 1µA, VDS = 0V
VGS(off) Gate to Source Cutoff Voltage 10 5 VDS = -15V, ID = -1µA
-0.5 VGS = 0V, ID = -6mA
VDS(on) Drain to Source On Voltage -0.5
V
VGS = 0V, ID = -3mA
IDSS Drain to Source Saturation Current2 -10 -5 mA VDS = -20V, VGS = 0V
IGSS Gate Leakage Current 2 2 VGS = 15V, VDS = 0V
-10 -10
nA VDS = -15V, VGS = 12V
ID(off) Drain Cutoff Current -10 -10 µA VDS = -15V, VGS = 7V
IDGO Drain Reverse Current -2 -2 nA VDG = -15V, IS = 0A
rDS(on) Drain to Source On Resistance 75 150 Ω I
D = -1mA, VGS = 0V
G
S
D2
1
3
BOTTOM VIEW
TO-18
Linear Integrated System
2N5018 SERIES
SINGLE P-CHANNEL
JFET SWITCH
Linear Integrated System
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