NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of functions, from low VCEsat (BISS) transistors and low VF (MEGA) Schottky rectifiers to P-channel MOSFETs and FET-KYs. Key features } Leadless, medium-power packages } 3 -lead (SOT1061) and 6-lead (SOT1118) versions } E xposed heat sink for excellent thermal and electrical performance (P tot > 1 W) } Broad portfolio supports all kinds of applications } Small dimensions : 2 x 2 x 0.65 mm } Ideal for mobile and battery-driven applications } Free of halogens and antimony oxides } Non-flammability classification UL 94V-0 and RoHS standards compliance Key benefits } Optimum power performance while saving space } Reduced size enables higher integration for smaller designs } Energy savings } Similar performance as other medium-power packages, such as SOT89 (SC-62) and SOT457 (SC-74), in a much smaller footprint Key applications } Portable applications (mobile phones, DSCs, PDAs, etc.) } Power management } Load switches } Battery chargers } DC/DC converters } LED driver circuits in LCD backlight units } Switch Mode Power Supply (SMPS) in mobile equipment } Notebooks SOT1061 and SOT1118 package characteristics SOT1061 minimized outline SOT1118 minimized outline Package market comparison 2 x 2 packages from other suppliers Chipfet package 1.9 mm 1 mm K/W 20 15 Without heatsink 2 mm 2 mm 3.05 mm Rthj-sp SOT1118 / (SOT1061) 2 mm 0.75 mm 2 mm Low height enables slim mobile devices 0.65 mm With heatsink -25 % 25 % better thermal performance Best-in-class thermal performance leads to higher currents and longer lifetimes P-channel MOSFET (dual) and FET-KYs in SOT1118 Features } ESD protected MOSFET of > 1 kV HBM } Very low RDSon of <70 m at VGS = 4.5 V } 1.8 V RDSon rating for operation at low voltage gate drive levels } Footprint compatible to SOT363 (SC-88) Benefits } Smallest 2 x 2 mm leadless FET-KY and dual P-channel MOSFET in the market with only 0.65 mm package height } Best-in-class thermal performance due to new FET-KYs (PMFPB6532UP and PMFPB6545UP), which offer the industry's lowest on-resistance in the ESD-protected 20 V category } Increased energy efficiency with lowest VF of 365 mV and 520 mV @ 1 A respectively Dual P-channel MOSFET in SOT1118 RDS(on) in mOhm Part number PMDPB65UP Configuration Polarity ESD protection Dual P yes VDSS (V) VGS (V) @ 4.5 V VGS @ 2.5 V VGS @ 1.8 V VGS 20 8 70 90 150 Types to be released soon (Samples available) P-channel FET-KYs in SOT1118 MOSFET ESD protection VDSS (V) VGS (V) Schottky diode VF in mV IR in A @ 4.5 V VGS RDS(on) in mOhm @ 2.5 V VGS @ 1.8 V VGS @1A @ VR = 20 V Part number Configuration Polarity PMFPB6532UP FET-KY P yes 20 8 70 90 150 365 700 PMFPB6545UP FET-KY P yes 20 8 70 90 150 520 25 Types to be released soon (Samples available) Comparison of available P-channel FET-KYs RDSon vs VF of several types with same or similar package to NXP's SOT1118 RDSon [m ] @ VGS = 4.5V Competitor type, with ESD protection Competition Competitor type, without ESD protection NXP type, with ESD protection - lowest RDSon - lowest VF NXP PMFPB6532UP PMFPB6545UP VF [mV] @1A Low VCEsat (BISS) transistors in SOT1061 Features } Breakthrough in small-signal (BISS) }D C collector current of up to 6 A (peak ICM 7 A) }U ltra-low saturation voltage VCEsat down to 200 mV at 6 A collector current IC }U ltra-low saturation resistance RCEsat of only 33 m }F ull range of voltages: 12 to 100 V }R eplacing a SOT89 transistor with a SOT1061 product achieves similar performance in a 75 % smaller footprint. Performance comparison SOT1061 versus SOT89 PBSS304PX VCEO Ic hFE min @ 2 A PBSS5560PA VCEO Ic hFE min @ 2 A 60 V 4.2 A 150 VCEsat typ @ 0.5 A / 50 mA 35 mV VCEsat typ @ 4 A / 400 mA 150 mV 60 V 5 A 150 VCEsat typ@0.5 A / 50 mA 35 mV VCEsat typ@4 A / 400 mA 180 mV SOT1061 SOT89 (SC-62) 75% space reduction on PCB Body dimensions: 2.0 x 2.0 mm = 4 mm2 Body dimensions: 4.5 x 2.5 mm = 11.3 mm2 1.5 mm height 0.65 mm height Low VCEsat (BISS) transistors in SOT1061 VCEO (V) IC (A) ICM (A) hFE (min/typ) RCEsat typ (m); @ IC; IC/IB = 20 VCEsat typ (mV) @ IC=0.5 A; IB=50 mA VCEsat max (mV) @ IC; IC/IB = 20 PBSS4612PA 12 6.0 7.0 280/440 33 20 275 PBSS4620PA 20 6.0 7.0 280/440 33 20 275 PBSS4330PA 30 3.0 5.0 300/465 75* 40 300* Type PBSS4630PA Polarity 30 6.0 7.0 280/450 35 21 275 PBSS4560PA 60 6.0 7.0 280/440 34 22 290 PBSS4580PA 80 5.6 7.0 270/425 40 25 320 PBSS8510PA 100 5.2 6.0 180/285 48 30 340 PBSS5612PA 12 6.0 7.0 220/335 33 20 300 PBSS5620PA 20 6.0 7.0 230/345 39 25 350 PBSS5330PA 30 3.0 5.0 200/320 75* 45 320* PBSS5630PA NPN PNP 30 6.0 7.0 230/345 39 25 350 PBSS5560PA 60 5.0 6.0 180/265 35 35 450 PBSS5580PA 80 4.0 5.0 180/265 65 40 420 PBSS9410PA 100 2.7 4.0 180/295 110 45 450 * IC/IB = 10 Improved power density with better rating for collector current versus PCB mounting area IC / solderland [A/mm2] Low VF (MEGA) Schottky rectifier in SOT1061 Features }H igh forward-current capability with low forward-voltage drop }H oused in leadless medium-power SOT1061 package }F ive AEC-Q101-qualified types with - average forward current up to 2 A - reverse voltage range between 20 and 60 V. - integrated guard ring for stress protection - increased performance and higher efficiency compared to other alternatives Medium power single Schottky rectifier in SOT1061 Package IF max (A) 1 2 VR max (V) SOT1061 plastic SMD VF max (mV) @ IF max IR max (mA) @ VR max Size (mm) 2.0 x 2.0 x 0.65 Ptot (W) 0.96 20 375 1.9 Low VF PMEG2010EPA 20 420 1.9 Low VF PMEG2020EPA 30 470 2.5 Low VF PMEG3020EPA 40 535 0.1 Low IR PMEG4020EPA 60 575 0.25 Low IR PMEG6020EPA Medium power dual Schottky rectifier in SOT1061 Common cathode configuration Package IF max (A) 2 1 SOT1061 plastic SMD VR max (V) VF max (mV) @ IF max IR max (mA) @ VR max Ptot (W) 0.96 20 420 1.1 Low VF PMEG2020CPA 30 440 2 Low VF PMEG3020CPA 40 500 0.055 Low IR PMEG4010CPA 60 540 0.070 Low IR PMEG6010CPA Types to be released soon (Samples available) Better VF characteristics due to improved design of die and SOT1061 package Size (mm) 2.0 x 2.0 x 0.65 Charger applications The new SOT1061 and SOT1118 packages show best-in-class thermal performance and offer excellent electrical values in a very small footprint size. Functions housed in these packages are well suited managing power in today's portable devices, especially in designs that use portable lithium-ion battery-charging circuits. Low VCEsat BISS transistor as pass element SOT1061 PBSS5630PA PBSS5330PA - 30 V, 3 A low VCEsat transistor PBSS5630PA - 30 V, 6 A low VCEsat transistor Dual P-channel MOSFET as pass element FET-KY (MOSFET & Schottky) as pass element SOT1118 PMDPB65UP Dual P-channel MOSFET 20 V VDS, 70 m RDSon www.nxp.com PMFPB6545UP 70 m P-channel MOSFET 455 mV VF Schottky diode PMFPB6532UP 70 m P-channel MOSFET 325 mV VF Schottky diode (c)2010 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The Date of release: June 2010 information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable Document order number: 9397 750 16946 and may be changed without notice. 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