MMBTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (MMBTA42)
• Ideal for Medium Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
A
E
JL
TOP VIEW
M
BC
H
GD
K
C
BE
E
B
C
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current (Note 1) (Note 3) IC -500 mA
Power Dissipation (Note 1) Pd 300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage and Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -300 ⎯ V IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -300 ⎯ V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -100μA, IC = 0
Collector Cutoff Current ICBO ⎯ -250 nA VCB = -200V, IE = 0
Collector Cutoff Current IEBO ⎯ -100 nA VCE = -3.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 25
40
25 ⎯ ⎯ IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.5 V IC = -20mA, IB = -2.0mA
Base- Emitter Saturation Voltage VBE(SAT) ⎯ -0.9 V IC = -20mA, IB = -2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ⎯ 6.0 pF VCB = -20V, f = 1.0MHz,
IE = 0
Current Gain-Bandwidth Product fT 50 ⎯ MHz VCE = -20V, IC = -10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (RθJA), power dissipation rating (Pd) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30060 Rev. 11 - 2 1 of 3
www.diodes.com MMBTA92
© Diodes Incorporated