SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2  FEBRUARY 95
PARTMARKING DETAIL 
BCW61A  BA BCW61AR  CA
BCW61B  BB BCW61BR  CB
BCW61C  BC BCW61CR  CC
BCW61D  BD BCW61DR  CD
COMPLEMENTARY TYPE BCW60
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -32 V
Collector-Emitter Voltage VCEO -32 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC-200 mA
Base Current IB-50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group A hFE
Group B hFE GroupC hFE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
S
W
ITCHING CIRCUIT
BCW61
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO -32 V ICEO
=-2mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IEBO
=-1µA
Collector-Emitter Cut-off
Current
ICES -20
-20
nA
µA
VCES
=-32V
VCES
=-32V ,Tamb
=150oC
Emitter-Base Cut-Off Current IEBO -20 nA VEBO
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.12
-0.25
-0.25
-0.55
V
V
IC
=-10mA,IB
= -0.25mA
IC
=-50mA, IB
=-1.25mA
Base-Emitter
Saturation Voltage
VBE(sat) -0.60
-0.68
-0.70
-0.80
-0.85
-1.05
V
V
IC
=-10mA, IB
=-0.25mA
IC
=-50mA, IB
=-1.25mA
Base - Emitter Voltage VBE -0.6
-0.55
-0.65
-0.72
-0.75
V
V
V
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE
=-5V
IC
=-50mA, VCE =-1V
Static BCW61A
Forward
Current
Transfer BCW61B
Ratio
BCW61C
BCW61D
hFE 120
60
140
170 220
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
30
180
80
200
250 310
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
40
250
100
270
350 460
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
100
380
110
340
500 630
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
Transition Frequency fT180 MHz IC
=10mA, VCE
= -5V
f = 100MHz
Emitter-Base Capacitance Cebo 11 pF VEBO
= -0.5V,f =1MHz
Collector-Base Capacitance Ccbo 6pFV
CBO
= -10V, f =1MHz
Noise Figure N 2 6 dB IC
=- 0.2mA, VCE =- 5V
RG
=2KΩ, f=1KHz
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
-IC : -IB1 : IB2 =10:1:1mA
R1=R2=5KΩ
VBB =-3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
C
B
E
BCW61
R
1
R
2
R
L
50Ω
VCC(-10V)+VBB
-10V tr< 5nsec
Zin ≥ 100kΩ
Oscilloscope
1µsec
Mark/Space ratio < 0.01
Zs=50ΩBAY 63
tr< 5nsec
SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2  FEBRUARY 95
PARTMARKING DETAIL 
BCW61A  BA BCW61AR  CA
BCW61B  BB BCW61BR  CB
BCW61C  BC BCW61CR  CC
BCW61D  BD BCW61DR  CD
COMPLEMENTARY TYPE BCW60
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -32 V
Collector-Emitter Voltage VCEO -32 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC-200 mA
Base Current IB-50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group A hFE
Group B hFE GroupC hFE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
S
W
ITCHING CIRCUIT
BCW61
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO -32 V ICEO
=-2mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IEBO
=-1µA
Collector-Emitter Cut-off
Current
ICES -20
-20
nA
µA
VCES
=-32V
VCES
=-32V ,Tamb
=150oC
Emitter-Base Cut-Off Current IEBO -20 nA VEBO
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.12
-0.25
-0.25
-0.55
V
V
IC
=-10mA,IB
= -0.25mA
IC
=-50mA, IB
=-1.25mA
Base-Emitter
Saturation Voltage
VBE(sat) -0.60
-0.68
-0.70
-0.80
-0.85
-1.05
V
V
IC
=-10mA, IB
=-0.25mA
IC
=-50mA, IB
=-1.25mA
Base - Emitter Voltage VBE -0.6
-0.55
-0.65
-0.72
-0.75
V
V
V
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE
=-5V
IC
=-50mA, VCE =-1V
Static BCW61A
Forward
Current
Transfer BCW61B
Ratio
BCW61C
BCW61D
hFE 120
60
140
170 220
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
30
180
80
200
250 310
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
40
250
100
270
350 460
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
100
380
110
340
500 630
IC
=-10µA, VCE
=-5V
IC
=-2mA, VCE =-5V
IC
=-50mA, VCE =-1V
Transition Frequency fT180 MHz IC
=10mA, VCE
= -5V
f = 100MHz
Emitter-Base Capacitance Cebo 11 pF VEBO
= -0.5V,f =1MHz
Collector-Base Capacitance Ccbo 6pFV
CBO
= -10V, f =1MHz
Noise Figure N 2 6 dB IC
=- 0.2mA, VCE =- 5V
RG
=2KΩ, f=1KHz
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
-IC : -IB1 : IB2 =10:1:1mA
R1=R2=5KΩ
VBB =-3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
C
B
E
BCW61
R
1
R
2
R
L
50Ω
VCC(-10V)+VBB
-10V tr< 5nsec
Zin ≥ 100kΩ
Oscilloscope
1µsec
Mark/Space ratio < 0.01
Zs=50ΩBAY 63
tr< 5nsec