APT12067JLL 1200V 17A 0.670W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP (R) D * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package MAXIMUM RATINGS S S G S All Ratings: TC = 25C unless otherwise specified. APT12067JLL Parameter UNIT L A C I N H C N E T O I E T C MA N A OR V AD INF 1200 Drain-Source Voltage Volts 17 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 460 Watts Linear Derating Factor 3.68 W/C VGSM PD TJ,TSTG 68 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 17 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) 1200 Volts 17 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.670 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) UNIT Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7088 Rev - 8-2001 Symbol DYNAMIC CHARACTERISTICS Symbol APT12067JLL Characteristic MIN Test Conditions TYP Ciss Input Capacitance VGS = 0V 4990 Coss Output Capacitance VDS = 25V 690 Reverse Transfer Capacitance f = 1 MHz 521 Crss Qg Qgs Total Gate Charge 3 td(on) Turn-on Delay Time tf 21 ID = ID[Cont.] @ 25C 105 VGS = 15V 19 L A C I N H C N E T O I E T C MA N A OR V AD INF Gate-Drain ("Miller ") Charge td(off) 176 Gate-Source Charge Qgd tr VGS = 10V VDD = 0.5 VDSS VDD = 0.5 VDSS 11 ID = ID[Cont.] @ 25C 52 RG = 0.6W 18 Rise Time Turn-off Delay Time Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD MIN Characteristic / Test Conditions TYP Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 68 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/s) 1080 Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) 22.0 dt 17 1 t rr dv/ MAX Peak Diode Recovery dv/ dt 5 UNIT Amps Volts ns C 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic RqJC Junction to Case RqJA Junction to Ambient MIN TYP 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 17.30mH, R = 25W, Peak I = 17A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 050-7088 Rev - 8-2001 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) * Source Drain 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058