BLF369,112 - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave

applications in the HF/VHF band up to 500 MHz.

[1] Th is the heatsink temperature.

[2] tp = 2 ms; δ = 10 %.

1.2 Features

nTypical pulsed performance at 225 MHz, a drain-source voltage VDS of 32 V and a

quiescent drain current IDq = 2 ×1.0 A:

uLoad power PL = 500 W

uPower gain Gp=19dB

uDrain efﬁciency ηD=55%

nAdvanced ﬂange material for optimum thermal behavior and reliability

nExcellent ruggedness

nHigh power gain

nDesigned for broadband operation (HF/VHF band)

nSource on underside eliminates DC isolators, reducing common-mode inductance

nEasy power control

nIntegrated ESD protection

nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS), using exemption No. 7 of the annex

BLF369

Multi-use VHF power LDMOS transistor

Rev. 04 — 19 February 2009 Product data sheet

Table 1. Typical performance

Typical RF performance at V

= 32 V and T

=25

C in a common-source 225 MHz test circuit.

[1]

Mode of operation f PLPL(PEP) GpηDIMD3

(MHz) (W) (W) (dB) (%) (dBc)

CW, class AB 225 500 - 18 60 -

2-tone, class AB f1 = 225; f2= 225.1 - 500 19 47 −28

pulsed, class AB [2] 225 500 - 19 55 -

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 04 — 19 February 2009 2 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

1.3 Applications

nPulsed applications up to 500 MHz

nCommunication transmitter applications in the HF/VHF/UHF band under speciﬁc

conditions

nIndustrial applications up to 500 MHz under special conditions

2. Pinning information

[1] Connected to ﬂange.

3. Ordering information

4. Limiting values

Table 2. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 drain1

2 drain2

3 gate1

4 gate2

5 source [1]

43 4

sym117

Table 3. Ordering information

Type number Package

Name Description Version

BLF369 - ﬂanged LDMOST ceramic package; 2 mounting holes;

4 leads SOT800-2

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage −0.5 +13 V

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 200 °C

Product data sheet Rev. 04 — 19 February 2009 3 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

5. Thermal characteristics

[1] Tj is the junction temperature.

[2] Rth(j-case) and Rth(j-h) are measured under RF conditions.

[3] Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device.

[4] See Figure 1.

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-case) thermal resistance from

junction to case Tj= 200 °C[1][2] 0.26 K/W

Rth(j-h) thermal resistance from

junction to heatsink Tj= 200 °C[1][2][3] 0.35 K/W

Zth(j-h) transient thermal impedance

from junction to heatsink Tj= 200 °C

tp= 100 µs; δ=10% [4] 0.063 K/W

tp= 1 ms; δ=10% [4] 0.117 K/W

tp= 2 ms; δ=10% [4] 0.133 K/W

tp= 3 ms; δ=10% [4] 0.142 K/W

tp= 1 ms; δ=20% [4] 0.140 K/W

(1) δ = 1 %

(2) δ = 2 %

(3) δ = 5 %

(4) δ = 10 %

(5) δ = 20 %

(6) δ = 50 %

(7) δ = 100 % (DC)

Fig 1. Transient thermal impedance from junction to heatsink as function of pulse duration

001aah494

0.2

0.1

0.3

0.4

Zth(j-h)

(K/W)

10−710−1

10−4

10−6110−3tp (s)

10−51010−2

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Product data sheet Rev. 04 — 19 February 2009 4 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

6. Characteristics

[1] ID is the drain current.

[2] Ciss and Coss include reverse transfer capacitance (Crss).

Table 6. Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=6mA [1] 65 - - V

VGS(th) gate-source threshold voltage VDS = 20 V; ID= 600 mA [1] 4 - 5.5 V

IDSS drain leakage current VGS =0V; V

DS =32V - - 4.2 µA

IDSX drain cut-off current VGS =V

GS(th) + 9 V; VDS = 10 V - 100 - A

IGSS gate leakage current VGS =20V; V

DS =0V - - 60 nA

gfs forward transconductance VGS =20V; I

D=13A [1] -15-S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 9 V; ID=13A [1] -40-mΩ

Ciss input capacitance VGS = 0 V; VDS =32V; f=1MHz [2] - 400 - pF

Coss output capacitance VGS = 0 V; VDS =32V; f=1MHz [2] - 230 - pF

Crss reverse transfer capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 15 - pF

VGS = 0 V; f = 1 MHz.

Fig 2. Output capacitance as a function of drain-source voltage; typical values per

section

VDS (V)

0504020 3010

001aae484

200

400

600

Coss

(pF)

Product data sheet Rev. 04 — 19 February 2009 5 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

7. Application information

[1] tp = 2 ms; δ = 10 %.

7.1 CW

Table 7. RF performance in a common-source 225 MHz test circuit

=25

C unless otherwise speciﬁed.

Mode of operation f VDS IDq PLPL(PEP) GpηDIMD3 ∆Gp

(MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB)

CW, class AB 225 32 2 × 1.0 500 - > 17 > 55 - -

2-tone, class AB f1= 225; f2= 225.1 32 2 × 1.0 - 500 > 18 > 43 < −24 1

pulsed, class AB [1] 225 - - 500 - > 18 > 50 - -

Fig 3. CW power gain and drain efﬁciency as a function of output power; typical values

PL (W)

0 500400200 300100

001aae501

(dB)

ηD

(%)

ηD

Product data sheet Rev. 04 — 19 February 2009 6 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

7.2 2-Tone

7.3 Pulsed

VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2×1.0 A; Th = 25 °C. VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2×1.0 A; Th = 25 °C.

Fig 4. 2-Tone power gain and drain efﬁciency as a

function of peak envelope power; typical

values

Fig 5. 2-Tone third order intermodulation distortion

as a function of peak envelope power; typical

values

PL(PEP) (W)

0 600400200

001aae502

(dB)

ηD

(%)

ηD

PL(PEP) (W)

0 600400200

001aae503

−40

−20

IMD3

(dBc)

−60

f = 225 MHz; VDS = 32 V; IDq =2× 1 A; tp= 2 ms;

δ= 10 %. f = 225 MHz; VDS = 32 V; IDq =2× 1 A; tp= 2 ms;

δ= 10 %.

Fig 6. Pulsed power gain as function of load power;

typical values Fig 7. Pulsed drain efﬁciency as function of

load power; typical values

001aah498

PL (W)

0 800600200 400

(dB)

001aah499

PL (W)

0 800600200 400

ηD

(%)

Product data sheet Rev. 04 — 19 February 2009 7 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

7.4 Maximum heatsink temperature

The heatsink temperature is deﬁned 1 mm below the surface of the heatsink at the center

of the ﬂange.

The maximum allowable heatsink temperature is given in the following graphs at several

pulsed conditions as well as for CW.

f = 225 MHz; VDS = 32 V; IDq =2× 1 A; tp= 100 µs;

δ= 10 %. f = 225 MHz; VDS = 32 V; IDq =2× 1 A; tp= 100 µs;

δ= 10 %.

Fig 8. Pulsed power gain as function of load power;

typical values Fig 9. Pulsed drain efﬁciency as function of

load power; typical values

PL (W)

0 800600200 400

001aah500

(dB)

PL (W)

0 800600200 400

001aah501

ηD

(%)

Product data sheet Rev. 04 — 19 February 2009 8 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

7.5 Ruggedness in class-AB operation

The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

through all phases under the following conditions: 2-tone signal; VDS =32V;f=225MHz

at rated load power (PL(PEP) = 500 W).

δ= 10 %.

(1) tp≤ 2 ms

(2) tp = 10 ms

(3) tp = 20 ms

(4) tp = 50 ms

(5) tp = 100 ms

δ= 20 %.

(1) tp≤ 2 ms

(2) tp = 10 ms

(3) tp = 20 ms

(4) tp = 50 ms

(5) tp = 100 ms

Fig 10. Heatsink temperature as function of power

dissipation at a duty cycle of 10 % Fig 11. Heatsink temperature as function of power

dissipation at a duty cycle of 20 %

001aah502

P (W)

0 1000800400 600200

100

(°C)

(1)

(2)

(3)

(4)

(5)

001aah503

P (W)

0 1000800400 600200

100

(°C)

(4)

(1)

(2)

(3)

(5)

Fig 12. CW heatsink temperature as function of power dissipation

001aah504

P (W)

100 700500300

100

(°C)

Product data sheet Rev. 04 — 19 February 2009 9 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

7.6 Reliability

8. Test information

TTF (0.1 % failure fraction); best estimate values.

The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.

(1) Tj = 100 °C

(2) Tj = 110 °C

(3) Tj = 120 °C

(4) Tj = 130 °C

(5) Tj = 140 °C

(6) Tj = 150 °C

(7) Tj = 160 °C

(8) Tj = 170 °C

(9) Tj = 180 °C

(10) Tj = 190 °C

(11) Tj = 200 °C

Fig 13. BLF369 electromigration (ID, total device)

001aae504

Idc (A)

0 302412 186

103

102

105

104

106

Years

(11)(10)(9)(8)(7)

(6)(5)(4)(3)(2)(1)

Table 8. List of components

For test circuit, see Figure 14,Figure 15 and Figure 16.

Component Description Value Remarks

B1 semi rigid coax 25 Ω; 120 mm EZ90-25-TP

B2 semi rigid coax 25 Ω; 56 mm EZ90-25-TP

C1 multilayer ceramic chip capacitor 91 pF [1]

C2, C3 multilayer ceramic chip capacitor 56 pF [1]

C4, C7 multilayer ceramic chip capacitor 100 pF [1]

C5, C8 ceramic capacitor 15 nF

C6, C9 electrolytic capacitor 220 µF

C10, C11, C13, C14 multilayer ceramic chip capacitor 220 pF [1]

C12, C15 ceramic capacitor 15 nF [1]

Product data sheet Rev. 04 — 19 February 2009 10 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

[1] American technical ceramics type 100B or capacitor of same quality.

[2] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

thickness copper plating = 35 µm.

C20 multilayer ceramic chip capacitor 100 pF [1]

C21 multilayer ceramic chip capacitor 20 pF [1]

C22, C25 multilayer ceramic chip capacitor 100 pF [1]

C23, C26 ceramic capacitor 15 nF

C24, C27 electrolytic capacitor 10 µF

C28, C31 multilayer ceramic chip capacitor 100 pF [1]

C29, C32 multilayer ceramic chip capacitor 220 pF

C30, C33 ceramic capacitor 15 nF

L1, L3 stripline - [2] (W × L) 12 mm × 15 mm

L2, L4 air coil - 4 windings; D = 8 mm; d = 1 mm

L5, L6 stripline - [2] (W × L) 14 mm × 15 mm

R1, R2, R3, R4 resistor 0.25 W; 4 Ω

R5, R6, R8, R9 resistor 0.25 W; 10 Ω

R7, R10 potentiometer 10 kΩ

R11, R12 resistor 0.25 W; 1 Ω

T1, T2 semi rigid coax 25 Ω; 68 mm EZ90-25-TP

T3, T4 semi rigid coax 25 Ω; 60 mm EZ90-25-TP

Table 8. List of components

…continued

For test circuit, see Figure 14,Figure 15 and Figure 16.

Component Description Value Remarks

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Product data sheet Rev. 04 — 19 February 2009 11 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

Fig 14. Class-AB common-source 225 MHz test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages

001aae535

50 Ω

C32

+ VD2(test)

+ VG2(test)

R9R8

R10

C27

C26

C25

+ VG1(test)

R6R5

C24

C22

C23

+ VD1(test)

L1L5

L6 L3

C1 C3

C20

C21

C12

C10 C11 R2R1

C15

C13 C14 R4R3

C31

B2 B1

C28

C29R11

R12

C30

C33

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xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x

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Product data sheet Rev. 04 — 19 February 2009 12 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

Fig 15. Printed-Circuit Board (PCB) for class-AB 225 MHz test circuit

001aae536

95 mm

80 mm

95 mm

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Product data sheet Rev. 04 — 19 February 2009 13 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

C1 mounted on top of transformers T1 and T2; C20 mounted on top of transformers T3 and T4.

Fig 16. Component layout for class-AB 225 MHz test circuit

001aae537

C24

C30

C29

C32

C31

C28

R11

R12

C33

+ VD1(test)

+ VG1(test)

+ VG2(test)

+ VD2(test)

C20 C21

R8 R9

C25

C26

R10C27

C23 C22

C4 C5

L2 R1 C12

C10

C11 C2

C14

C15

C13

L4 R3 R4

R6R5

BLF 369

Product data sheet Rev. 04 — 19 February 2009 14 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

9. Package outline

Fig 17. Package outline SOT800-2

SOT800-2

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT800-2 05-06-02

05-06-07

Flanged LDMOST ceramic package; 2 mounting holes; 4 leads

0 5 10 mm

scale

mm 0.050.25 0.2538.512.7

10.55

10.45 0.15

0.10 30.5

29.9 15.3

15.1 22.8

21.8 15.4

15.0

6.3

5.9 2.26

2.00 44.5

44.2

3.56

3.49 3.1

2.8

14.6

14.4

31.1

30.9 3.7

3.3

inches 0.0020.01 0.011.516

UNIT A Dbc eU2yq w2

FU1

pQEE1

D1HL

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

0.5

0.415

0.411 0.006

0.004 1.201

1.177 1.224

1.216 0.602

0.594 0.898

0.858 0.606

0.591

0.248

0.232 0.089

0.079 1.752

1.740

0.140

0.137 0.122

0.110

0.575

0.567 0.146

0.130

U2P

w1 A

M M BM

w2 C

M M

Product data sheet Rev. 04 — 19 February 2009 15 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

10. Abbreviations

11. Revision history

Table 9. Abbreviations

Acronym Description

CW Continuous Wave

DC Direct Current

GSM Global System for Mobile communications

HF High Frequency

LDMOS Laterally Diffused Metal-Oxide Semiconductor

LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor

PEP Peak Envelope Power

RF Radio Frequency

TTF Time To Failure

UHF Ultra High Frequency

VHF Very High Frequency

VSWR Voltage Standing-Wave Ratio

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF369_4 20090219 Product data sheet - BLF369_3

Modiﬁcations: •Data sheet status updated from 'Preliminary data sheet' to 'Product data sheet'

BLF369_3 20080129 Preliminary data sheet - BLF369_2

BLF369_2 20061208 Objective data sheet - BLF369_1

BLF369_1 20060413 Objective data sheet - -

Product data sheet Rev. 04 — 19 February 2009 16 of 17

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors BLF369

Multi-use VHF power LDMOS transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 February 2009

Document identifier: BLF369_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 5

7.1 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.2 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.3 Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.4 Maximum heatsink temperature . . . . . . . . . . . . 7

7.5 Ruggedness in class-AB operation. . . . . . . . . . 8

7.6 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13 Contact information. . . . . . . . . . . . . . . . . . . . . 16

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17