CLA30E1200HB - Zilog - Pdf.Support

CLA 30 E 1200 HB

V = V

A²s

High Efficiency Thyristor

Symbol Definition

R a t i n g s

Features / Advantages:

typ. max.

I

R/D

V

IA

V

T

1.28

R0.55 K/W

R/D

2 1

3

min.

30

Applications:

V

RSM/DSM

V1300

10T = 25°C

VJ

T = °C

VJ

mA2

Package:

Part number

V = V

R/D

T = 25°C

VJ

I = A

T

V

T = °C

C

120

P

tot

190 WT = 25°C

C

T

VJ

150 °C-40

V

I

RRM

=

1200

47

30

CLA 30 E 1200 HB

V

A

1200

max. non-repetitive reverse/forward blocking voltage

reverse current, drain current

forward voltage drop

virt ua l j un ctio n temp e r ature

total power dissipation

Conditions Unit

1.56

T = 25°C

VJ

125

V

T0

V0.86T = °C

VJ

150

r

T

12.5 mΩ

V1.25T = °C

VJ

I = A

T

V

30

1.61

I = A

T

60

I = A

T

60

threshold voltage

slope resistance for power loss calculation only

Backside: anode

=30

A

● Housing:

Single Thyristor

TO-247

●rIndustry standard outline

●rEpoxy meets UL 94V-0

●rRoHS compliant

µA

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

125

V

RRM/DRM

V1200

max. re pe titiv e re vers e/forward blockin g volt a ge T = 25°C

VJ

IA47

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

150

Wt = 5

P

GAV

W0.5

average gate power dissipation

C

J

13

j

unction capacitance V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = °C

VJ

45

max. forward surge current

T = °C

VJ

150

I²t T = °C45

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

150

I

300

325

315

A

255

275

450

440

1200

300 µs

RMS forward current

T

(

RMS

)

T(RMS)

T(AV)M

180° sine

T

(

AV

)

M

average forward current

IXYS reserves the right to change limits, conditions and dimensions. 20110209d

Data according to IEC 60747and per diode unless otherwise specified

CLA 30 E 1200 HB

(di/dt)

cr

A/µ

s

150

repetitive, I =

T

VJ

= 150°C

critical rate of rise of current

V

GT

gate trigger voltage V= 6 V T = °C25

(dv/dt) T = 150 °C

critical rate of rise of voltage

A/µ

s

500

V/µ

s

f = 50 Hz; t = 200 µs

IA;

V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

Symbol Definition Ratings

typ. max.min.Conditions Uni

t

40 A

T

P

= 0.3 di /dt A/µs=0.3

DDRM

cr

V = ⅔ V

D DRM

GK

500

1.3

V

T= °C-40

VJ

I

GT

gate trigger current V= 6 V T = °C25

DVJ

28 m

A

T= °C-40

VJ

1.6

V

50 m

A

V

GD

gate non-trigger voltage T= °C

VJ

0.2

V

I

GD

gate non-trigger current 1m

A

V = ⅔ V

D DRM

150

latching current T= °C

VJ

90 m

A

I

L

25tµs

p

=10

IA;= 0.3 di /dt A/µs=0.3

holding current T= °C

VJ

60 m

A

I

H

25V= 6 V

D

R = ∞

GK

gate controlled delay tim e T= °C

VJ

2µst

gd

25

IA;= 0.3 di /dt A/µs=0.3

V = ½ V

D DRM

turn-off time T= °C

VJ

150 µst

q

di/dt = A/µs;10 dv/dt = V/µs20

V =

R

100 V; I A

T

=30

V = ⅔ V

D DRM

tµs

p

= 200

non-repetitive, I = 30 A

T

;

150

IXYS reserves the right to change limits, conditions and dimensions. 20110209d

Data according to IEC 60747and per diode unless otherwise specified

CLA 30 E 1200 HB

I

RMS

A

per terminal 50

R

thCH

K/W0.25

M

D

Nm1.2

mounting torque 0.8

T

stg

°C150

storage temperature -55

Weight g6

Symbol Definition Ratings

typ. max.min.Conditions

RMS current

thermal resistance case to heatsink

Unit

F

C

N120

mount ing forc e with cl ip 20

Ordering Delivering Mode Base Qty Code Key

Standard Part Name

CLA 30 E 1200 HB 508221Tube 30

000000

YYWWZ

Logo

Marking on product

DateCode

Assembly Code

abcdef

Product Marking

Assembly Line

C

L

A

30

E

1200

HB

Thyristor (SCR)

High Efficiency Thyristor

(up to 1200 V)

Single Part

TO-247AD (3)

=

CLA30E1200PB

CLA30E1200PC

CS22-12io1M

CS22-08io1M

TO-220AB (3)

TO-263AB (D2Pak)

TO-220ABFP (3)

Similar Part Package

Marking on Pr oduct

CLA30E1200HB

1200

800

Voltage class

Current Rating [A]

Reverse Voltage [V]

=

CMA30E1600PN

CMA30E1600PB

TO-220ABFP (3)

TO-220AB (3)

1600

Part number

IXYS reserves the right to change limits, conditions and dimensions. 20110209d

Data according to IEC 60747and per diode unless otherwise specified

CLA 30 E 1200 HB

S

Ø

P

Ø

P1 D2

D1

E1

4

123

L

L1

2x

b2

3x

b

b4

2x

e

2x

E2

D

E

Q

A

A2

A1

C

Sym. Inches Millimeter

min. max. min. max.

A 0.185 0.209 4.70 5.30

A1 0.087 0.102 2.21 2.59

A2 0.059 0.098 1.50 2.49

D 0.819 0.845 20.79 21.45

E 0.610 0.640 15.48 16.24

E2 0.170 0.216 4.31 5.48

e 0.215 BSC 5.46 BSC

L 0.780 0.800 19.80 20.30

L1 - 0.177 - 4.49

Ø P 0.140 0.144 3.55 3.65

Q 0.212 0.244 5.38 6.19

S 0.242 BSC 6.14 BSC

b 0.039 0.055 0.99 1.40

b2 0.065 0.094 1.65 2.39

b4 0.102 0.135 2.59 3.43

c 0.015 0.035 0.38 0.89

D1 0.515 - 13.07 -

D2 0.020 0.053 0.51 1.35

E1 0.530 - 13.45 -

Ø P1 - 0.29 - 7.39

Outlines TO-247

IXYS reserves the right to change limits, conditions and dimensions. 20110209d

Data according to IEC 60747and per diode unless otherwise specified

CLA 30 E 1200 HB

0 20 40 60 80 100 120 140 16

0

10

20

30

40

50

60

0255075

0

1

2

3

4

10-2 10-1 100101

10-1

100

101

102

0.001 0.01 0.1 1

0

100

200

300

400

0.5 1.0 1.5 2.0

0

10

20

30

40

50

60

0.001 0.01 0.1 1 10

0.01

0.1

1

IT

[A]

t [s]VT[V]

23456789011

100

1000

I2t

[A2s]

t [ms]

ITSM

[A]

TVJ = 25°C

TVJ =125°C

TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C

TVJ = 45°C

VR =0 V

VG

[V]

IG[mA]

ITAVM

[A]

Tcase [°C]

ZthJC

[K/W]

t[s]

Fig. 1 Forward characteristics Fig. 2 Surge overload current

ITSM: crest value, t: duration

Fig. 3 I2t versus time (1-10 s)

Fig. 4 Gate voltage & gate current

Triggering: A = no; B = possible; C = safe

Fig. 6 Max. forward current at

case temperature

Fig. 7 Transient thermal impedance junction to case

TVJ =150°C

125°C

IGD:T

VJ =125°C

IGD: TVJ = 25°C

IGD:T

VJ =25°C

IGD:T

VJ =0°C

IGD:T

VJ = -40°C

A

B

C

tgd

[µs]

IG [A]

lim.

typ.

Fig. 5 Gate controlled delay time tgd

Constants for ZthJC calculation:

iR

thi (K/W) ti(s)

1 0.024 0.0005

2 0.059 0.0018

3 0.128 0.014

4 0.306 0.08

5 0.033 0.56

180° sine

IXYS reserves the right to change limits, conditions and dimensions. 20110209d

Data according to IEC 60747and per diode unless otherwise specified