SBAT54T1G - ON SEMICONDUCTOR

April, 2014 − Rev. 10 Publication Order Number:

BAT54T1/D

BAT54T1G, SBAT54T1G

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•Extremely Fast Switching Speed

•Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)

Rating Symbol Value Unit

Reverse Voltage VR30 V

Forward Power Dissipation, FR−5 Board

(Note 1) @ TA = 25°C

Derate above 25°C

400

3.2 mW

mW/°C

Thermal Resistance,

Junction−to−Case RJL 174 °C/W

Thermal Resistance,

Junction−to−Ambient RJA 492 °C/W

Forward Current (DC) IF200 Max mA

Non−Repetitive Peak Forward Current

tp < 10 msec IFSM 600 mA

Repetitive Peak Forward Current

Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA

Junction Temperature TJ−55 to 125 °C

Storage Temperature Range Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR-5 = 1.0 x 0.75 x 0.062 in.

CATHODE 2

ANODE

30 VOLT

SCHOTTKY BARRIER

DETECTOR AND SWITCHING

DIODES

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Device Package Shipping†

ORDERING INFORMATION

SOD−123

CASE 425

STYLE 1

MARKING DIAGRAM

BAT54T1G SOD−123

(Pb−Free) 3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SBM G

SB = Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

SBAT54T1G SOD−123

(Pb−Free) 3000 / Tape & Reel

BAT54T1G, SBAT54T1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 A) V(BR)R 30 − − V

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz) CT− 7.6 10 pF

Reverse Leakage

(VR = 25 V) IR− 0.5 2.0 Adc

Forward Voltage

(IF = 0.1 mAdc) VF− 0.22 0.24 Vdc

Forward Voltage

(IF = 30 mAdc) VF− 0.41 0.5 Vdc

Forward Voltage

(IF = 100 mAdc) VF− 0.52 0.8 Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr − − 5.0 ns

Forward Voltage

(IF = 1.0 mAdc) VF− 0.29 0.32 Vdc

Forward Voltage

(IF = 10 mAdc) VF− 0.35 0.40 Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

10 V 2 k

820



0.1 F

DUT

100 H0.1 F

50  Output

Pulse

Generator

50  Input

Sampling

Oscilloscope

trtpt

10%

90%

trr t

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

BAT54T1G, SBAT54T1G

http://onsemi.com

CT, TOTAL CAPACITANCE (pF)

100

0.0 0.1VF, FORWARD VOLTAGE (VOLTS)

0.2 0.3 0.4 0.5

1.0

0.1

85°C

0VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001 51015 20 25

0VR, REVERSE VOLTAGE (VOLTS)

51015 30

Figure 2. Forward Voltage

Figure 3. Leakage Current

Figure 4. Total Capacitance

−40°C

25°C

TA = 150°C

TA = 125°C

TA = 85°C

TA = 25°C

0.6

−55°C

150°C

125°C

100

1000

2520

IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA)

SOD−123

CASE 425−04

ISSUE G

DATE 07 OCT 2009

SCALE 5:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

ÂÂÂÂ

DIM MIN NOM MAX

MILLIMETERS INCHES

A0.94 1.17 1.35 0.037

A1 0.00 0.05 0.10 0.000

b0.51 0.61 0.71 0.020

1.60

0.15

0.055D1.40 1.80

E2.54 2.69 2.84 0.100

---

3.68 0.140

L0.25

3.86

0.010

0.046

0.002

0.024

0.063

0.106

0.145

0.053

0.004

0.028

0.071

0.112

0.152

MIN NOM MAX

3.56

---

--- ---

0.006

--- ---

GENERIC

MARKING DIAGRAM*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

*This information is generic. Please refer to device data

sheet for actual part marking. Pb−Free indicator, “G” or

microdot “ G”, may or may not be present.

XXX = Specific Device Code

M = Date Code

G= Pb−Free Package

XXXMG

STYLE 1:

PIN 1. CATHODE

2. ANODE

1.22

0.048

ÉÉÉ

0.91

0.036

2.36

0.093

4.19

0.165

ǒmm

inchesǓ

SCALE 10:1

ÉÉÉ

--- ---

q00

10 10

°°° °

(Note: Microdot may be in either location)

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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SOD−123

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