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Electrical Characteristics (at TA=25 C unless otherwise noted)
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Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter Symbol Unit
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
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0.375"(9.5mm) Lead Length @TA=55 C
Peak Forward Surge Current,
8.3mS single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage @1.0A
Maximum DC Reverse Current at Rated
Operating Temperature Range
Storage Ttemperature Range
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TA=25 C
DC Blocking voltage per element
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
50
35
50
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
RθJA
TJ
TSTG
1.0
30
5.0
50
15
60
-55 ~ +150
-55 ~ +150
V
V
V
A
A
V
PF
OC
OC
μA
OC/W
NOTES:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2
2. Thermal Resistance from junction to terminal 6.0mm copper pads to each terminal.
Voltage: 50 to 1000 V
Current: 1.0 A
RoHS Device
Dimensions in inches and (millimeter)
DO-41
Features
-Low cost construction.
-Fast forward voltage drop.
-Low reverse leakage.
-High forward surge current capability.
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-High soldering temperature guarantee: 260 C/10
seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)
tension.
Mechanical data
-Case: transfer molded plastic, DO-41
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Indicated by cathode band
-Lead: Plated axial lead, solderable per MIL-STD-
202E, method 208C
-Mounting position: Any
-Weight: 0.012ounce, 0.33 grams
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
1N4001-G Thru. 1N4007-G
Page 1
QW-BG013
General Purpose Silicon Rectifiers
REV:A
Comchip Technology CO., LTD.
0.205(5.20)
1.0(25.40) Min.
0.107(2.70)
0.034(0.90)
0.028(0.70)
0.080(2.00)
0.160(4.20)
1.0(25.40) Min.
SMD Diodes Specialist
COMCHIP
1.1
30
-G
4001 1N
-G
4002 1N
-G
4003 1N
-G
4004 1N
-G
4005
1N
-G
4006 1N
-G
4007 1N
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TA=100 C
Maximum Full Load Reverse Current,full cycle
average 0.375”(9.5mm)lead length at TL=75 C
OIR(AV) μA
Page 2
QW-BG013
General Purpose Silicon Rectifiers
REV:A
Comchip Technology CO., LTD.
Rating and Characteristic Curves ( 1N4001 )
-G Thru. 4007-G 1N
Fig.2 Maximum. Non-Repetitive Peak
Forward Surge Current
0
ΙFSM, Peak Forward Surge Current (A)
Number of Cycles at 60Hz
1
Fig.1 Typical Forward Current
Derating Curve
I(AV), Average Forward Current (A)
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TA, Ambient Temperature ( C)
0 25 75 175
Fig.3 Typical Instantaneous Forward
Characteristics
0.01
IF, Instantaneous Forward Current (A)
VF, Instantaneous Forward Voltage (V)
1.0
0.6 1.0 1.4
0
0.6
1.0
1.6 2.0
100
15
35
1.2
0.1
Fig.4 Typical Reverse Characteristics
0.01
IR, Instantaneous Reverse Current (mA)
Percent of Peak Reverse Voltage (%)
1.0
10
0.1
100 125
0.4
0.8
0.8 1.8
Fig.5 Typical Junction Capacitance
10
CJ, Capacitance (pF)
VR, Reverse Voltage (V)
100
0.1 10 100
10
50 150
0.2
10
5
10
25
30
1.2 040 80 100 140
20 120
60
1
Single phase
Half wave, 60Hz
Resistive or
inductive load
20
8.3mS, single half
sine-wave, JEDEC
method.
TJ=TJmax
10
SMD Diodes Specialist
COMCHIP
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TJ=100 C
TJ=25 OC
f=1MHz
O
TJ=25 C
20 502 5
Pulse width=300μs.
1% duty cycle
O
TJ=25 C
