MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOWIRF120 IRF124 = IRF122 = IRF123 _IRFS20 = IRF524 = IRF522 = IRF523 IRF120 IRF{24 # IRF122 IRF123 IRF520 IRF524 IRF522 IRF523 -Channel Enhancement Mode 400Vmospower Siliconix Advanced Information These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. FEATURES Product Summary Part PIN 2 Source CASE Drain : ; Number BVpss Rosion) Ip Package a High Voltage , IRF120 - 400V a No Second Breakdown REID, Sov 0.302 BA a High Input Impedance RFID Toov TO-3 a Internal Drain-Source Diode - 0.400 7A IRF123 60V a Very Rugged: Excellent SOA TRFS20 T00V _a@ Extremely Fast Switching TAFS21 Sov] (0-302 BA. ro-soone BENEFIS we er ea | o ws Reduced Component Count a improved Performance o = Simpler Designs it m Improved Reliability oS s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Gurrent IRF120, 122, 520, 522 ....... Lecce ese ete stone teens een tees 100V Pulsed (804s to 3004s, 1% duty cycle)....... fee eeeneetaes +32A WRF121, 123, 521,523... ccc sneer etre teens 60V Gate Current (Peak) oocccccccccccccscccsesecesecseeees co. 3 |. Oe te ee8 500 100V Gate-Source Voltage ........... cece cece en en eee ree e eens +40V IRF121, 123, 521,523... eee eee cere tence eee ee ee 60V Total Power Dissipation ...... eek e cere eet ee eee ett e nee 40 W Linear Derating Factor... 2.0... ccc cccc rece eee eee ee 0.32 W/C Drain Current Continuous IRF 120, 121, 520, 521 Operating and Storage . IRF 122, 123, 522, 523 Temperature ..... ee cece eee cnn ccna ee! 55C to + 150C PACKAGE DIMENSIONS + @.450 (17.43) 290 bee (25) 5260 76.36) te zi p80 (2.04) 0.135 max Max ct yp (F.429} 0.043 (1.092) 9-312 sean 0.038 76.965) aan $00 (12.70) PLANE 1.197 (30.404) } pia 9.181 14.08) ie O675 (17.145) [a7 (29.896) oe 098) ae 0.655 (16.637) T 0.188 wax 245 (1.15) ats BOTH ENDS 380 [ 60) - 070 (17% 0.440 (11,176) A 2 \ 420 (70.66) 4 0420 770.668) ~ 74 f | ' ~My 0.161. (4.089) 048 17.15) } 0.225 (6.715) 0528 OTB (3.835) cd aa - 0.208" 5,207) BorToM view (13335) BMAX PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 & TAB Drain PIN 3 Source SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part sa . Parameter Number. | Me Typ Max Unit Test Conditions / Static IRF120, 520 | 144 Drain-Source Breakdown IRF122, 522 BYoss Voltage IRF121, 521 ay | Vas =9, [p= 250uA IRF 123, 523 60 . Vestn Gate Threshold Voltage All 2.0 4.0 V_s| Vps= Ves: Ipb= 1 mA less Gate-Body Leakage All +100 nA Vas = + 20V, Vos = 0 Zero Gate Voltage Drain 0.4 0.25 Vos = Rated Vos: Ves= 9 loss Current All: mA u 0.2 1.0 Vpg = Rated Vos, Vag = 0, To = 125C loton) On-State Drain Current All 8.0 A Vos = 25V, Vag = 10V (Note 1) IRF120, 121 , 0.25 0.30 Static Drain-Source On-State _ |_!RF520, 521 _ 'oSion) Resistance TAFI22, 123 2 | Veg =10V, Ip =4A (Note 1) IRF522, 523 0.30 | 0.40 Dynamic Os Forward Transconductance All 1.5 2.5 Ss Vos = 25V, Ip = 4A (Note 1) Cigs Input Capacitance 450 600 Coss Output Capacitance All 200 400 pF Ves = 9, Vos = 25V, = 0.1 MHz Crss Reverse Transfer Capacitance 50 100 {aion) Turn-On Delay Time All 20 40 tr Rise Time Alt 35 70 Vop= 30V, [pz 4A, R= 72, Ry = 259 ns taor) Turn-Off Delay Time All 0.| 100 (Figure 1) tr Fall Time . All| 35 70 a Orain-Source Diode Characteristics Vsp Forward On Voltage All : -1.9 Vv ig =-8A (Note 1) te Reverse Recovery Time All 150 ns Ip =B8A, Veg =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 ys to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 1 Switching Test Circuit 4 ~ 7 i | | | ; Sen | | 1 1 Fe a. | 20V 1 | 3 T's | | Py | |p eincurr = { PULSE UNDER [generaToR] LEST I PW. = 1 ys Cg < 50 pF BUTY CYCLE = 1% FIGURE 2 JEDEC Reverse Recovery Circuit FROM TRIGGER CKT di/dt Adjust (1 - 27 uH) _ .* 5 TO 50uF _. (pkyAdjust : ) sq IN4001 4000uF Se pi- - 4 R$ 0.252 L $0.01nH + -} A IN4723 2N4204 SCOPE J D> Siliconix 2Gial = CCSAMl = bCSIal = OZSAaI S2bsal = Cobsal = bObIal = OSbsalELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Parameter |Part Number| Min | Typ | Max [ Unit { Test Conditions Static IRF130, 132 | 499 8Vpss Drain-Source Breakdown IRF530, 532 Vv Vas = 0, Ip = 250uA Voltage IRF131, 133 60 tRF531, 533 Vesith Gate Threshold Voltage All 2.0 4.0 Vv Ves= Vos, p= 1 mA lass Gate-Body Leakage All +100 nA Vas = + 20V, Vos =0 I Zero Gate Voltage Drain All 0.25 mA Vps = Rated Vos Vas = 0 PSS Current 1.0 Vog = Rated Vag Vag = 9, T= 125C IRF 130, 131 1.44 Vosion Drain-Source ON-State IRF530, 531 v Ves" 10V, 1,,= 8A, (Note 1) Voltage IRF132, 133 20 IRF532, 533 IRF 130, 131 0.18 rosiom Drain-Source On tRF530, 531 2 Vag 10V, |= 8A (Note 1) Resistance IRF132, 133 0.25 IRF532, 533 . lojon) _ On-State Drain Current All 14 A | Vog = 25V, Vag = 10V, (Note 1) Dynamic ts Forward Transconductance All 4.0 S | Vos= 25V, |p = 8A, (Note 1) Ciss Input Capacitance All 800 Reverse Transfer Crs Capacitance Al 150 pF Ves = 0, Vos = 25V, f= 1 MHz Coss Output Capacitance All 500 taion) Turn-On Delay Time All 30 te Rise Time All 75 ns__| Yoo=30V, Ip=8A, R, =3.59, Ry = 102 taoty Turn-Off Delay Time All 40 (Figure 1) ty Fall Time All 45 Drain-Source Diode Characteristics Vsp Forward On Voltage All -1.5 v Ig = 14A, Veg = 0 (Note 1) ; Ip =-14A, di/dt = 100A/us, Veg = 0 All 10 ns FE . US, Ves tr Reverse Recovery Time 30 (Figure 2) Note 1: Pulse test 80 us to 300 us, 1% duty cycle Refer to VNDA12 Design Curves (See Section: 4) TEST CIRCUITS FIGURE 2 JEDEC Reverse Recovery Circuit FIGURE 1 Switching Test Circuit | VN 502 di/dt Adjust Vin Yop (1-27 uH) +. 5 TO 50uF -- | IN4933 x _ | epqy Adjust L i 7 | j | : . ed | | 2409 ro +2 IN4001 | | 4000uF SS >t | | 7 4 | | R$ 0.259 | | ciReuit = { L$ 0.01uH PULSE UNDER [generaron| LEST | 4 + i ww PW. = 1 ys Cg <50 pF IN4723 | r 2N4204 DUTY CYCLE = 1% l SCOPE FROM TRIGGER CKT Siliconix essai = ZESdal = LESdal = OESidl cebddl = Cebdal = VEbsal = Obsal