© 2004 IXYS All rights reserved DS98903C(03/04)
2 = Gate 3 = Drain
1 = Source 4 = Anode/Cathode
ISOPLUS 227TM(IXFE)
3
4
1
2
3
2
CASE DIODE HiPerFET MOSFET
IXYS reserves the right to change limits, test conditions, and dimensions.
Buck & Boost Configurations for
PFC & Motor Control Circuits
VDSS ID (cont) RDS(on) trr
500 V 39 A 0.12 Ω35 ns
500 V 41A 0.11 Ω35 ns
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 500 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25°C 44N50Q 39 A
48N50Q 41 A
IDM TC = 25°C, 44N50Q 176 A
pulse width limited by max. TJM 48N50Q 192 A
IAR TC = 25°C48A
EAR TC = 25°C60mJ
EAS TC = 25°C 2.5 J
dv/dt IS ≤ IDM, -di/dt ≤ 100 A/µs, VDD ≤ VDSS, 15 V/ns
TJ ≤150°C, RG = 2 Ω
PDTC = 25°C 400 W
VRRM 600 V
IFAVM TC = 70°C; rectangular, d = 0.5 60 A
IFRM tp <10 µs; pulse width limited by TJ 800 A
PDTC = 25°C 180 W
TJ-40 ... +150 °C
TJM 150 °C
Tstg -40 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 19 g
HiPerFETTM
Power MOSFETs
Features
• Popular Buck & Boost circuit
topologies
•Conforms to SOT-227B outline
•Isolation voltage 3000 V~
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Low drain-to-case capacitance
(<60 pF)
- reduced RFI
•Ultra-fast FRED diode with soft
reverse recovery
Applications
•Power factor controls and buck
regulators
•DC servo and robotic drives
•DC choppers
• Switch reluctance motor controls
Advantages
•Easy to mount with 2 screws
•Space savings
•Tightly coupled FRED
4
1
1
2
3
4
IXFE44N50QD2 IXFE44N50QD3
IXFE48N50QD2 IXFE48N50QD3
D2 D3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
ISOPLUS-227 B
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 500 V
VGS(th) VDS = VGS, ID = 4 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = IT44N50Q 0.12 Ω
48N50Q 0.11 Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V, ID = IT, pulse test 30 36 S
Ciss 8000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 930 pF
Crss 220 pF
td(on) 33 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = IT22 ns
td(off) RG = 1Ω (External) 75 ns
tf10 ns
Qg(on) 190 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT40 nC
Qgd 86 nC
RthJC 0.31 K/W
RthCK 0.07 K/W
Ultra-fast Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IRTJ= 25°C; VR= VRRM 200 µA
TJ= 150°C; VR= 0.8VRRM 2.5 mA
VFIF = 60A, VGS = 0 V 2.05 V
Note1 TJ = 150°C 1.4 V
trr II = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C3550ns
IRM IF= 60A, di/dt = -100 A/µs, VR = 100 V, TJ = 100°C 8.3 A
RthJC 0.7 K/W
RthJK 0.05 K/W
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IXFE44N50 IT = 22A
IXFE48N50 IT = 24A
IXFE44N50QD2 IXFE48N50QD2
IXFE44N50QD3 IXFE48N50QD3
Please note:
For characteristic curves please see
IXFK48N50Q
