Document Number: 83549 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 08-May-08 301
Optocoupler, Phototransistor Output, with Base Connection in
SOIC-8 Package, 110 °C Rated
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors
DESCRIPTION
The 110 °C IL1205AT/1206AT/1207AT/1208AT are optically
coupled pairs with a gallium arsenide infrared LED and a
silicon NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while maintaining
a high degree of electrical isolation between input and
output. This family comes in a standard SOIC-8 small outline
package for surface mounting which makes them ideally
suited for high density application with limited space. In
addition to eliminating through-hole requirements, this
package conforms to standards for surface mounted
devices.
A specified minimum and maximum CTR allows a narrow
tolerance in the electrical design of the adjacent circuits. The
high BVCEO of 70 V gives a higher safety margin compared
to the industry standard 30 V.
FEATURES
Operating temperature from - 55 °C to + 110 °C
High BVCEO, 70 V
Isolation test voltage, 4000 VRMS
Industry standard SOIC-8 surface mountable
package
Compatible with dual wave, vapor phase and IR
reflow soldering
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
AC adapters
•PLCs
Switch mode power supplies
DC/DC converters
Microprocessor I/O interfaces
General impedance matching circuits
AGENCY APPROVALS
UL1577 - file no. E52744 system code Y
CUL - file no. E52744, equivalent to CSA bulletin 5A
DIN EN 60747-5-5 available with option 1
i179002
1
2
3
4
A
K
NC
NC
8
7
6
5
NC
B
C
E
ORDER INFORMATION
PART REMARKS
IL1205AT CTR 40 to 80 %, SOIC-8
IL1206AT CTR 63 to 125 %, SOIC-8
IL1207AT CTR 100 to 200 %, SOIC-8
IL1208AT CTR 160 to 320 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Continuous forward current IF60 mA
Peak reverse voltage VR6.0 V
Power dissipation Pdiss 90 mW
Derate linearly from 25 °C 0.9 mW/°C
OUTPUT
Collector emitter voltage VCE 70 V
Collector current IC50 mA
t < 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 1.5 mW/°C
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549
302 Rev. 1.7, 08-May-08
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC).
Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature Fig. 2 - Output Power Dissipation vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage VISO 4000 VRMS
Operating temperature Tamb - 55 to + 110 °C
Total package dissipation (LED and detector) Ptot 240 mW
Storage temperature Tstg - 55 to + 150 °C
Soldering temperature (2) max. 10 s, dip soldering distance
to seating plane 1.5 mm Tsld 260 °C
Derate linearly from 25 °C 2.4 mW/°C
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
010 20304050607080 90 100 110 120
0
10
20
30
40
50
60
70
80
90
100
Tamb(°C)
LED Power P
diss
(mW)
0 10 20 30 40 50 60 70 80 90 100 110 120
0
10
20
30
40
50
60
70
80
90
100
T
amb
(°C)
Output Power P
diss
(mW)
110
120
130
140
150
160
ELECTRICAL CHARACTERISTCS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.3 1.5 V
Reverse current VR = 6 V IR0.1 100 µA
Capacitance VR = 0 V CI13 pF
OUTPUT
Collector emitter leakage current VCE = 10 V ICEO 5.0 50 nA
Collector emitter breakdown voltage IC = 100 µA BVCEO 70 V
Emitter collector breakdown voltage IE = 100 µA BVECO 7.0 10 V
Collector base breakdown current BVCBO 70 V
Saturation voltage, collector emitter IC = 2 mA, IF = 10 mA VCEsat 0.4 V
COUPLER
DC current transfer ratio
IF = 10 mA, VCE = 5.0 V
IL1205AT CTR 40 80 %
IL1206AT CTR 63 125 %
IL1207AT CTR 100 200 %
IL1208AT CTR 100 320 %
IF = 1.0 mA, VCE = 5.0 V
IL1205AT CTR 13 25 %
IL1206AT CTR 22 40 %
IL1207AT CTR 34 60 %
IL1208AT CTR 56 95 %
Capacitance (input to output) CIO 0.5 pF
Document Number: 83549 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 08-May-08 303
IL1205AT/1206AT/1207AT/1208AT
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
Vishay Semiconductors
Fig. 3 Switching Test Circuit
Note
As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time IC = 2 mA, RL = 100 Ω,
VCC = 10 V ton 3.0 µs
Turn-off time IC = 2 mA, RL = 100 Ω,
VCC = 10 V toff 3.0 µs
i205at_11
VOUT
VCC = 5 V
RL
Input
toff
tr
10 %
50 %
90 %
ts
tpdoff
tpdon
ton
tr
td
Output
Input
10 %
50 %
90 %
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1) 55/110/21
Pollution degree (DIN VDE 0109) 2.0
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1, group
IIIa per DIN VDE 6110 175 399
CTI 175 399
VIOTM VIOTM 6000 V
VIORM VIORM 560 V
Resistance (input to output) RIO 1012 Ω
PSI 350 mW
ISI 150 mA
TSI 165 °C
Creepage distance 4.0 mm
Clearance distance 4.0 mm
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549
304 Rev. 1.7, 08-May-08
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 4 - Diode Forward Voltage VF vs. Forward Current
Fig. 5 - IC (Unsaturated) vs. VCE
Fig. 6 - Collector to Emitter Current vs. Ambient Temperature
Fig. 7 - IC (Saturated) vs. VCE
Fig. 8 - CTR Normalized to IF = 10 mA vs. Ambient Temperature,
(Saturated, VCE = 0.4 V)
Fig. 9 - CTR Normalized to IF = 10 mA vs. Ambient Temperature,
(Non-Saturated, VCE = 5 V)
0.1 1.0 10.0 100.0
I
F
(mA)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Forward Voltage V
F
(V)
- 55 °C
0 °C
+ 25 °C + 50 °C
+ 110 °C
0
5
10
15
20
25
30
35
40
45
50
012345678910
VCE (V)
Collector Current (mA)
I
F
= 5 mA
I
F
= 10 mA
I
F
= 15 mA
I
F
= 20 mA
I
F
= 30 mA
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
100000
Collector to Emitter Leakage Current
ICE0 (nA)
40 V
24 V
12 V
- 55 - 40 - 25 - 10 20 35 50 65 8095 110 125
Tamb (°C)
5
0
5
10
15
20
25
30
0.0 0.1 0.2 0.3 0.4 0.5
V
CE
(V)
Collector Current (mA)
IF = 1 mA IF = 2 mA
IF = 5 mA
IF = 10 mA
IF = 25 mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
- 55 - 40 - 25 - 10 20 35 50 65 80 95 110 125
T
amb
(°C)
Normalized CTR
5
Normalized to I = 10 mA
Tamb = 25 °C
F
I
F
= 5 mA
I
F
= 10 mA
I
F
= 1 mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Normalized CTR
- 55 - 40 - 25 - 10 20 35 50 65 80 95 110 125
T
amb
(°C)
5
Normalized to I = 10 mA
Tamb = 25 °C
F
IF = 1 mA
IF = 5 mA
IF = 10 mA
Document Number: 83549 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 08-May-08 305
IL1205AT/1206AT/1207AT/1208AT
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
Vishay Semiconductors
Fig. 10 - CTR vs. IF, (VCE = 5 V, Tamb = 25 °C) (Not Normalised)
Fig. 11 - CTR vs. IF, (VCE = 5 V, Tamb = 25 °C) Norm alised t o
IF = 10 mA, Tamb = 25 °C
Fig. 12 - CTR vs. IF Saturated, (VCE = 0.4 V, Tamb = 25 °C)
Fig. 13 - CTR vs. IF Saturated, Normalised to IF = 10 mA,
Tamb = 25 °C
Fig. 14 - Normalized hFE vs. Base Current and Tamb
(Non-Saturated Condition)
Fig. 15 - Normalized hFE vs. Base Current and Tamb
(Saturated Condition)
0
50
100
150
200
250
300
0.1 1.0 10.0
IF (mA)
CTR (%)
IL1208
IL1207
IL1206
IL1205
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1.0 10.0 100.0
I
F
(mA)
CTR
IL1208
IL1207
IL1206
IL1205
0
50
100
150
200
250
0.1 1.0 10.0 100.0
IF (mA)
CTR (%)
IL1208
IL1207
IL1206
IL1205
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1 1.0 10.0 100.0
I
F
(mA)
CTR
IL1208
IL1207
IL1206
IL1205
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.01 0.1 1 10 100
Base Current (µA)
Normalized h
FE
+ 25 °C
0 °C + 50 °C + 110 °C
- 55 °C
VCE = 5 V
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0.01 0.1 1 10 100
Base Current (µA)
Normalized hFE
+ 110 °C
+ 50 °C
0 °C
+ 25 °C
- 55 °C
VCE = 0.4 V
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549
306 Rev. 1.7, 08-May-08
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
Fig. 16 - Collector Base Photocurrent vs. IF
Fig. 17 - Cut-Off-Frequency (- 3 dB) vs. Collector Current
Fig. 18 - Switching Time ton, toff vs. Load Resistance
Fig. 19 - Switching Time ton, toff vs.
Load Resistance (100 Ω to 5000 Ω)
Fig. 20 - Switching Time vs. IF
Fig. 21 - Switching Time vs. RBE, IF = 10 mA
0.001
0.01
0.1
1
10
100
1000
0.1 1 10 100
IF (mA)
Collector-Base-Photocurrent IBCP (µA)
- 55 °C
0 °C + 25 °C
+ 50 °C
+ 110 °C
1
10
100
1000
0.1 1 10 100
Ic (mA)
Cut-off-Frequency fctr (kHz)
IL1 207,
IL1208
0 °C
+ 25 °C
+ 50 °C
VCE = 5 V, Tamb = 25 °C
1
10
100
1000
0 1 10 100
Load Resistance (kW)
ton, toff (µs)
toff
ton
1
10
100
0110
Load Resistance (kW)
ton, toff (µs)
toff
ton
19281 IF (mA)
0 5 10 15 20
Switching Time (µs)
0
2
4
6
8
10
12
14
16
t
on
t
off
RBE = 500 k, V
CE
= 5 V
T
amb
= + 25 °C
0
5
10
15
20
25
30
10 100 1000 10000
t
off
ton
RBE (kW)
Switching Time (µs)
Document Number: 83549 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 08-May-08 307
IL1205AT/1206AT/1207AT/1208AT
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
i178003
40°
Pin one ID
max.
ISO method A
0.036 (0.91)
0.014 (0.36)
0.170 (4.32) 0.045 (1.14)
0.260 (6.6)
R 0.010 (0.13)
0.050 (1.27)
0.240
(6.10)
0.050 (1.27) typ.
0.016 (0.41)
0.004 (0.10)
0.008(0.20)
Lead coplanarity
± 0.0015 (0.04) max.
0.008 (0.20)
0.120 ± 0.005
(3.05 ± 0.13)
CL
R 0.010
(0.25) max.
0.021 (0.53)
0.154 ± 0.005
(3.91 ± 0.13)
0.015 ± 0.002
(0.38 ± 0.05)
0.192 ± 0.005
(4.88 ± 0.13)
0.020 ± 0.004
(0.51 ± 0.10)
2 places
0.058 ± 0.005
(1.49 ± 0.13)
0.125 ± 0.005
(3.18 ± 0.13)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549
308 Rev. 1.7, 08-May-08
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
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therein, which apply to these products.
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