Document Number: 83549 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 08-May-08 301
Optocoupler, Phototransistor Output, with Base Connection in
SOIC-8 Package, 110 °C Rated
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors
DESCRIPTION
The 110 °C IL1205AT/1206AT/1207AT/1208AT are optically
coupled pairs with a gallium arsenide infrared LED and a
silicon NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while maintaining
a high degree of electrical isolation between input and
output. This family comes in a standard SOIC-8 small outline
package for surface mounting which makes them ideally
suited for high density application with limited space. In
addition to eliminating through-hole requirements, this
package conforms to standards for surface mounted
devices.
A specified minimum and maximum CTR allows a narrow
tolerance in the electrical design of the adjacent circuits. The
high BVCEO of 70 V gives a higher safety margin compared
to the industry standard 30 V.
FEATURES
• Operating temperature from - 55 °C to + 110 °C
• High BVCEO, 70 V
• Isolation test voltage, 4000 VRMS
• Industry standard SOIC-8 surface mountable
package
• Compatible with dual wave, vapor phase and IR
reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• AC adapters
•PLCs
• Switch mode power supplies
• DC/DC converters
• Microprocessor I/O interfaces
• General impedance matching circuits
AGENCY APPROVALS
• UL1577 - file no. E52744 system code Y
• CUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 available with option 1
i179002
1
2
3
4
A
K
NC
NC
8
7
6
5
NC
B
C
E
ORDER INFORMATION
PART REMARKS
IL1205AT CTR 40 to 80 %, SOIC-8
IL1206AT CTR 63 to 125 %, SOIC-8
IL1207AT CTR 100 to 200 %, SOIC-8
IL1208AT CTR 160 to 320 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Continuous forward current IF60 mA
Peak reverse voltage VR6.0 V
Power dissipation Pdiss 90 mW
Derate linearly from 25 °C 0.9 mW/°C
OUTPUT
Collector emitter voltage VCE 70 V
Collector current IC50 mA
t < 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 1.5 mW/°C