MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V IC = 200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile Complementary PNP Type MMBT3906FA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X2-DFN0806-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0008 grams (approximate) C X2-DFN0806-3 B B C E E Top View Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 4) Product MMBT3904FA-7B Notes: Marking 1N Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 1N 1N = Product Type Marking Code Top View Bar Denotes Base and Emitter Side MMBT3904FA Document number: DS36016 Rev. 1 - 2 1 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3904FA Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 200 mA Peak Pulse Collector Current ICM 500 mA Value 435 287 150 -55 to +150 Unit mW C/W C/W C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage and Temperature Range Symbol PD RJA RJL TJ, TSTG ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 200 Unit V V JEDEC Class 3A B 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT3904FA Document number: DS36016 Rev. 1 - 2 2 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3904FA Thermal Characteristics and Derating Curves 0.45 Max Power Dissipation (W) IC Collector Current (A) VCE(sat) Limited DC 100m 1s 100ms 10ms 1ms 10m Single Pulse T amb=25C 100m 100s 1 10 VCE Collector-Emitter Voltage (V) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 20 Maximum Power (W) Thermal Resistance (C/W) 100 120 140 160 100 Single Pulse T amb=25C 100 1k 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS36016 Rev. 1 - 2 80 Derating Curve Pulse Width (s) MMBT3904FA 60 Temperature (C) Safe Operating Area 300 275 T amb=25C 250 225 200 175 D=0.5 150 125 100 D=0.2 Single Pulse 75 D=0.05 50 25 D=0.1 0 100 1m 10m 100m 1 10 40 Pulse Power Dissipation 3 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3904FA Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Base Breakdown Voltage BVCBO 60 V IC = 10A, IE = 0 Collector-Emitter Breakdown Voltage (Note 8) BVCEO 40 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 10A, IC = 0 ICEX 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 300 IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(sat) 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Collector Cutoff Current Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 8) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 8.5 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 k Voltage Feedback Ratio hre 0.5 8.0 x 10 Small Signal Current Gain hfe 100 400 Output Admittance hoe 1.0 40 S fT 300 MHz Current Gain-Bandwidth Product -4 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td 35 ns Rise Time tr 35 ns Storage Time ts 200 ns Fall Time tf 50 ns Note: VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT3904FA Document number: DS36016 Rev. 1 - 2 4 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3904FA Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) IB = 2mA 400 IB = 1.6mA 350 0.12 IB = 1.2mA 0.10 IB = 0.8mA 0.08 IB = 0.6mA IB = 0.4mA 0.06 0.04 IB = 0.2mA 0.02 VCE = 1V T A = 150C 300 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.14 T A = 125C 250 T A = 85C 200 T A = 25C 150 100 T A = -55C 50 0.00 1 2 3 4 5 0 6 1 Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage Fig. 5 Typical DC Current Gain vs. Collector Current T A = 150C T A = 125C T A = 85C T A = -55C 0.01 100m T A = 25C 1 10 SATURATION VOLTAGE (V) 0.1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER 1 TA = 85C TA = 150C 0.8 TA = 125C TA = 85C 5C TA = 2 0.4 TA = -55C 1 10 100 TA = -55C TA = 25C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VCE = 5V TA = 150C TA = 125C 0.1 Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 IC/IB = 20 0.01 100m 100 IC, COLLECTOR CURRENT (mA) VBE(ON), BASE-EMITTER TURN ON VOLTAGE (V) 100 IC, COLLECTOR CURRENT (mA) IC/IB = 10 0.6 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Gain = 10 1.0 TA = 150C 0.8 0.6 TA = 125C TA = TA= 0.4 85C 25C T A = -55C 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn On Voltage vs. Collector Current Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current MMBT3904FA Document number: DS36016 Rev. 1 - 2 5 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3904FA Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A3 A1 A X2-DFN0806-3 Dim Min Max Typ A 0.375 0.40 0.39 A1 0 0.05 0.02 A3 0.10 b 0.10 0.20 0.15 D 0.55 0.65 0.60 D1 0.35 0.45 0.40 E 0.75 0.85 0.80 E1 0.20 0.30 0.25 e 0.35 K 0.20 L 0.20 0.30 0.25 All Dimensions in mm Seating Plane D e L (2x) b (2x) K E E1 Pin#1 R0.075 D1 Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. X1 Y1 Y2 Dimensions X (2x) C X X1 X2 Y Y1 Y2 Y (2x) Value (in mm) 0.350 0.200 0.450 0.550 0.375 0.475 1.000 C X2 MMBT3904FA Document number: DS36016 Rev. 1 - 2 6 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3904FA IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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