MJE371 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

 

. . . designed for use in general–purpose amplifier and switching circuits. Recom-

mended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry

circuitry.

•DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc

•MJE371 is Complementary to NPN MJE521

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎ

VCB

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

4.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

4.0

8.0

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

2.0

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

320

ÎÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎÎ

3.12

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Cutoff Current

(VCB = 40 Vdc, IE = 0)

ÎÎÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE371/D

 Motorola, Inc. 1995



4 AMPERE

POWER TRANSISTOR

PNP SILICON

40 VOLTS

40 WATTS

CASE 77–08

TO–225AA TYPE

REV 2

MJE371

2 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.5

0.1

0.3 BONDING WIRE LIMIT

SECOND BREAKDOWN LIMIT

THERMAL LIMIT @ TC = 25

Figure 1. Active–Region Safe Operating Area

5.0

20106.02.0

TJ = 150

IC, COLLECTOR CURRENT (AMP)

1.0

2.0

3.0

0.2

604.0 8.0

1.0 ms

100

5.0 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150

C; TC is vari-

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided TJ(pk)

150

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less then the limitations

imposed by second breakdown.

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN, NORMALIZED

7.0

0.02 0.03 0.1 4.00.01

1.0

0.7

0.5

0.1 0.05 0.3 0.50.2

150

CTJ = 25

–55

Figure 2. DC Current Gain Figure 3. “On” Voltage

2.0

IC, COLLECTOR CURRENT (AMP)

1.6

0.4

TJ = 25

VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V

5.0

0.3

0.2

1.2

0.8

t, TIME OR PULSE WIDTH (ms)

0.01

0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), EFFECTIVE TRANSIENT

JC(t) = r(t)

JC = 3.12

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

SINGLE PULSE

THERMAL RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5 D = 0.5

0.1

0.01

0.3

0.7

0.07

0.03

0.02

3.0

2.0

1.0 3.02.0

VCE = 1.0 Vdc

VCE(sat) @ IC/IB = 10

0.01 0.02 0.05 4.00.005 0.03 0.2 0.30.1 0.5 2.0 3.01.0

0.02 0.05 0.3 3.0 500 1000

0.02

0.05

0.2

MJE371

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

MJE371

4 Motorola Bipolar Power Transistor Device Data

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MJE371/D

*MJE371/D*

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