© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 13
1Publication Order Number:
BDX33B/D
BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
High DC Current Gain hFE = 2500 (typ.) at IC = 4.0
CollectorEmitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) BDX33B, BDX334B
= 100 Vdc (min) BDX33C, BDX334C
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
BDX33B, 33C/34B, 34C
Monolithic Construction with BuildIn BaseEmitter Shunt Resistors
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
VCEO 80
100
Vdc
CollectorBase Voltage
BDX33B, BDX34B
BDX33C, BDX34C
VCB 80
100
Vdc
EmitterBase Voltage VEB 5.0 Vdc
Collector Current Continuous
Peak
IC10
15
Adc
Base Current IB0.25 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD70
0.56
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, JunctiontoCase RqJC 1.78 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80100 VOLTS, 65 WATTS
TO220AB
CASE 221A09
STYLE 11
http://onsemi.com
MARKING DIAGRAM
BDX3xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
23
BDX3xyG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
http://onsemi.com
2
80
60
40
20
00 20 40 60 80 100 120 140 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0) BDX33B/BDX34B
BDX33C/BDX34C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B
BDX33C/BDX33C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCER(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B
BDX33C/BDX34C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEX(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0) TC = 25°C
TC = 100°C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.5
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = rated VCBO, IE = 0) TC = 25°C
TC = 100°C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
10
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 1)
(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
750
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Diode Forward Voltage
(IC = 8.0 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VF
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
http://onsemi.com
3
Figure 1. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
20
1.0
10
5.0
2.0
1.0
0.5
0.02 3.0 5.0 7.0 10 20 30 50 10
0
70
0.2
dc
5.0 ms
1.0 ms
BDX33B
BDX33C
500 ms
100
ms
TC = 25°C
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
20
1.0
Figure 2. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.02 3.0 5.0 7.0 10 20 30 50 10070
0.2
IC, COLLECTOR CURRENT (AMP)
dc
5.0 ms
1.0 ms
BDX34B
BDX34C
500 ms
100
ms
TC = 25°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE limits
of the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 3 is based on TJ(pk)
= 150°C; TC is variable depending on conditions. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150°C. TJ(pk) may be calculated from the
data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
10,000
1.0
Figure 3. SmallSignal Current Gain
f, FREQUENCY (kHz)
10 2.0 5.0 10 20 50 100 200 1000
500
300
100
5000
hFE, SMALL-SIGNAL CURRENT GAIN
20
3000
200
500
2000
1000
30
50
300
0.1
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 5.0 20 10010
C, CAPACITANCE (pF)
200
100
70
50
TJ = 25°C
Cib
Cob
500.2 0.5
TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
PNP
NPN
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
http://onsemi.com
4
0.1
Figure 5. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 4.0 V
200 7.0
NPN
BDX33B, 33C
PNP
BDX34B, 34C
20,000
5000
10,000
3000
2000
1000
3.0 5.0 0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
200 7.0
20,000
5000
10,000
3000
2000
1000
3.0 5.0
VCE = 4.0 V
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A 6.0 A
1.0 0.7 2010
3.0
IB, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A 6.0 A
1.0 0.7 2010
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 7. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
TJ = 25°C
0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
http://onsemi.com
5
ORDERING INFORMATION
Device Package Shipping
BDX33B TO220
50 Units / Rail
BDX33BG TO220
(PbFree)
BDX33C TO220
50 Units / Rail
BDX33CG TO220
(PbFree)
BDX34B TO220
50 Units / Rail
BDX34BG TO220
(PbFree)
BDX34C TO220
50 Units / Rail
BDX34CG TO220
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
BDX33B/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative