© 2011 IXYS CORPORATION, All Rights Reserved
Features
zHigh Blocking Voltage
zLow Switching Losses
zHigh Current Handling Capability
zAnti-Parallel Diode
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
z
Uninterrupted Power Supplies (UPS)
zCapacitor Discharge Circuits
zLaser Generators
DS99832B(08/11)
High Voltage, High Gain
BiMOSFETTM
Monolithic Bipolar
MOS Transistor
IXBK64N250
IXBX64N250
VCES = 2500V
IC110 = 64A
VCE(sat) ≤≤
≤≤
≤ 3.0V
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 2500 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ2500 V
VGES Continuous ±25 V
VGEM Transient ±35 V
IC25 TC= 25°C (Chip Capability) 156 A
ILRMS Lead Current Limit, RMS 120 A
IC100 TC= 110°C 64 A
ICM TC= 25°C, 1ms 600 A
SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 160 A
(RBSOA) Clamped Inductive Load VCE < 0.8 • VCES
TSC VGE = 15V, TJ = 125°C,
(SCSOA) RG = 5Ω, VCE = 1250V, Non-Repetitive 10 μs
PCTC= 25°C 735 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C
MdMounting Torque (TO-264 ) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247 ) 20..120/4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC= 1mA, VGE = 0V 2500 V
VGE(th) IC= 4mA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 50 μA
TJ = 125°C 6 mA
IGES VCE = 0V, VGE = ± 25V ±200 nA
VCE(sat) IC= IC110, VGE = 15V, Note 1 2.5 3.0 V
TJ = 125°C 3.1 V
G = Gate C = Collector
E = Emitter Tab = Collector
PLUS247TM (IXBX)
TO-264 (IXBK)
E
G
C
Tab
Tab
G
CE
IXBK64N250
IXBX64N250
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max
VF IF = IC110, VGE = 0V, Note 1 3.0 V
trr 160 ns
IRM 480 A
IF = IC110, VGE = 0V, -diF/dt = 650A/μs
VR = 600V, VGE = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = IC110, VCE = 10V, Note 1 40 72 S
Cies 8900 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 345 pF
Cres 118 pF
Qg 400 nC
Qge IC = IC110, VGE = 15V, VCE = 600V 46 nC
Qgc 155 nC
td(on) 49 ns
tr 318 ns
td(off) 232 ns
tf 170 ns
td(on) 54 ns
tr 578 ns
td(off) 222 ns
tf 175 ns
RthJC 0.17 °C/W
RthCS 0.15 °C/W
Resistive Switching Times, TJ = 125°C
IC = 128A, VGE = 15V, tp = 1μs
VCE = 1250V, RG = 1Ω
Resistive Switching Times, TJ = 25°C
IC = 128A, VGE = 15V, tp = 1μs
VCE = 1250V, RG = 1Ω
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Additional provisions for lead-to-lead isolation are required at VCE >1200V.
TO-264 Outline
PLUS247TM Outline
Terminals: 1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
© 2011 IXYS CORPORATION, All Rights Reserved
IXBK64N250
IXBX64N250
Fi g . 1. Ou tp u t C h ar acter i st i cs @ T
J
= 25ºC
0
50
100
150
200
250
300
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fi g . 2. Ou tp u t C h ar acter i stics @ T
J
= 125ºC
0
30
60
90
120
150
180
210
240
270
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
CE
- Volts
I
C
- Amperes
10V
V
GE
= 25V
20V
15V
5V
Fi g . 3 . D ep en d en ce of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 256A
I
C
= 64A
I
C
= 128A
Fi g . 4. Co l l ecto r -to-Emi tter Vo ltag e
vs. Gate-to -Emi tter Vol tag e
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
5 7 9 11 13 15 17 19 21 23 25
V
GE
- Volts
V
CE
- Volts
I
C
= 256A
128A
64A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GE
- Volts
I
C
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fi g. 5. B r e akd o wn & Thr e sh o l d V o l tag es
vs. Ju n cti on Temp er atu r e
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-55 -35 -15 5 25 45 65 85 105 125
T
J
- Degrees Centigrade
BV
CES
&
V
GE(
th
)
- Normalized
BV
CES
V
GE(
th
)
IXBK64N250
IXBX64N250
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. T ransconductance
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140
IC - Amperes
g
f s
-
Siemens
25ºC
T
J
= - 40ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450
QG - NanoCoulombs
VGE - Volts
V
CE
= 600V
I
C
= 64A
I
G
= 10mA
Fi g. 11. R everse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
250 500 750 1000 1250 1500 1750 2000 2250 2500
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 1
dv / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f = 1 MHz
Cies
Coes
Cres
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VF - Volts
IF - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g. 12. Fo r war d-B ias Saf e Op er ati ng Ar ea
1
10
100
1000
1 10 100 1,000 10,000
VCE - Volts
IC - Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
V
CE(
sat
)
Limit
25µs
© 2011 IXYS CORPORATION, All Rights Reserved
IXBK64N250
IXBX64N250
Fi g . 14 . R esi sti v e Tur n -o n R i se Ti me vs.
Drain Current
200
250
300
350
400
450
500
550
600
650
60 80 100 120 140 160 180 200 220 240 260
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 1 , V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 15. R esisti ve Turn -o n Switching Times vs.
Gate Re si stan ce
450
500
550
600
650
700
750
800
12345678910
R
G
- Ohms
t
r - Nanoseconds
45
50
55
60
65
70
75
80
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 256A
I
C
= 64A
I
C
= 128A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
160
170
180
190
200
210
220
230
240
250
260
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
150
165
180
195
210
225
240
255
270
285
300
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GE
= 15V
V
CE
= 1250V
I
C
= 128A, 256A
I
C
= 64A
Fi g . 17. R es i sti ve Tu r n -o ff Swi tch i n g Ti mes vs.
Drain Current
140
170
200
230
260
290
320
350
60 80 100 120 140 160 180 200 220 240 260
I
C
- Amperes
t
f
- Nanoseconds
150
170
190
210
230
250
270
290
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fi g . 13 . R esi sti v e Tur n -o n R i se Ti me vs.
Juncti on Tem perature
250
300
350
400
450
500
550
600
650
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GE
= 15V
V
CE
= 1250V
I
C
= 256A, 128A, 64A
Fig. 18. Resistive Turn-off Switching T imes vs.
Gate Re si stan ce
50
100
150
200
250
300
350
400
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 64A, 128A, 256A
IXBK64N250
IXBX64N250
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: B_64N250(9P)8-12-11B
Fi g. 19 . Maximum Transien t Th e r mal Impe d an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
