PR2001GPR2007G VISHAY Vishay Lite-On Power Semiconductor 2.0A Fast Recovery Glass Passivated Rectifier Features Glass passivated die construction Diffused junction Fast switching for high efficiency High current capability and low forward voltage drop Surge overload rating to 80A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V-0 14 421 Absolute Maximum Ratings 25C qj Repetitive peak reverse voltage PR2001G Vrru 50 Vv =Working peak reverse voltage PR2002G | =Vrawm 100 Vv =DC Blocking voltage PR2003G =VpR 200 V PR2004G 400 Vv PR2005G 600 Vv PR2006G 800 Vv PR2007G 1000 Vv Peak forward surge current lesm 80 A Average forward current Ta=55C lFay 2 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IpF=2A Ve 1.3 Vv Reverse current Tp=25C IR 5 uA Ta=100C IR 100 | pA Reverse recovery time ||l-F=1A, IR=0.5A, PR2001G2004G tr 150 | ns 1=0.25A PR2005G ter 250 | ns PR2006G-2007 ter 500 | ns Diode capacitance VpR=4V, f=1MHz Cp 35 pF Thermal resistance Rthut 50 KAW junction to terminal Rev. A2, 24-Jun-98 1 (4) PR2001GPR2007G wa Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) ~ 2.0 Single phase half-wave x 90 | ll | | | | | | | x 60 Hz resistive or inductive load = Single Half Sine-Wave 5 16 eC (JEDEC Method) = 5 Tj) = 150C 6 o 60 \ : S12 5 N = a NI Ic g Ny o 0.8 e IN a i 30 oO x IN 3 g Ds c 04 o Bae! > I 0 = 0 25 50 75 100 125 150 175 200 1 10 100 15498 Tamb Ambient Temperature (C ) 15500 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 10 100 ~ L re a = g 8 g 2 g 10 = 3 er ol 2 I a a I a Tj =25C o IF Pulse Width = 300 ps 0.01 1 0.4 0.6 0.8 1.0 1,2 1 10 100 15499 Ve Forward Voltage ( V ) 15501 Va Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98 PR2001GPR2007G VISHAY Dimensions in mm A U0-15 Dim Min Max A 25.40 - B 5.90 1.62 C 0.686 0.689 U 2.60 3.6 All Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 0.4 grams Mounting position: any Marking: type number Vishay Lite-On Power Semiconductor technical drawings according to DIN specifications 14442 Rev. A2, 24-Jun-98 PR2001GPR2007G Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98