333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com sales@semicoa.com
Copyright 2012 Rev. 1
FEATURES
Available in JANTX and JANTXV equivalent levels
RDS(ON) < 70 mΩ
Simple Drive Requirements
Low Gate Charge
POWER MOSFET
FOR RUGGED ENVIRONMENT
DESCRIPTION
SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabil-
ity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be
used for ground based telecommunications, vehicles, ships, weapon systems and other application where failure
is not an option.
SCF2N7224T1
JANTX2N7224
JANTXV2N7224
REF: MIL-PRF-19500/592
Ease of Paralleling
Hermecally Sealed
Die Available
For footnotes refer to the last page
N-Channel
100 Volt
< 0.07 Ohms
34 Amp
ABSOLUTE MAXIMUM RATINGS
TO-254AA
PARAMETER UNITS
lD @ VGS = 10 V, TC = 25 °C Connuous Drain Current 34
A
lD @ VGS = 10 V , TC = 100 °C Connuous Drain Current 21
IDM Pulsed Drain Current (1) 136
PD@ TC = 25° C Max Power Dissipaon 150 W
Linear Derang Factor 1.2 W/°C
VGS Gate to Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (2) 150 mJ
IAR Avalanche Current (1) 34 A
TJ
TSTG
Operang Juncon
Storage Temperature Range
-55 to 150 °C
Lead Temperature 300 °C
Weight 9.3 typical g
333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com sales@semicoa.com
Copyright 2012 Rev. 1
For Footnotes refer to the last page
SCF2N7224T1
Electrical Characteristics @ TJ 25°C (unless otherwise specific)
PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
BVDSS Drain to Source Breakdown
Voltage 100 - - V VGS = 0 V, ID = 1.0 mA
ΔBVDSS/ΔTJ Temperature Coecient of
Breakdown Voltage - 0.13 - V/°C Reference to 25 °C, ID = 1.0 mA
RDS(ON) Stac Drain to Source On-State
Resistance - - 0.07 Ω VGS = 10 V, ID = 21 A (4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250 µA
gsf Forward Transconductance 9.0 - - S(Ʊ) VDS ≥ 15 V, IDS = 21 A (4)
IDSS Zero Gate Voltage Drain Current
- - 25
µA
VDS = 80 V, VGS = 0 V
- - 250 VDS = 80 V, VGS = 0 V, Tj = 125 °C
IGSSF Gate to Source Leakage Forward 100 nA VGS = 20 V
IGSSR Gate to Source Leakage Reverse -100 nA VGS = -20 V
Qg Total Gate Charge - - 125
nC VGS = 10 V, ID = 34 A , VDS = 50 V Qgs Gate to Source Charge - - 22
Qgd Gate to Drain (Miller) Charge - - 65
Td(on) Turn On Delay Time - - 35
nS VDD = 50 V, ID = 34 A,
VGS = 10 V, RG = 2.35Ω
Tr Rise Time - - 190
Td(o) Turn O Delay Time - - 170
Tf Fall me - - 130
CISS Input Capacitance - - -
pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz
COSS Output Capacitance - - -
CRSS Reverse Transfer Capacitance - - -
Source-Drain Diode Rating and Characteristics
PARMETER MIN TYP MAX UNITS TEST CONDITIONS
IS Connuous Source Current (Body Diode) - - 34 A
ISM Pulse Source Current (Body Diode) - - 136 A
VSD Diode Forward Voltage - - 1.8 V Ti = 25 °C, IS = 34 A, VGS = 0 V (4)
Trr Reverse Recovery Time - - 500 nS Ti = 25 °C, IF = 34 A, di/dt ≤ 100 A/
µS, VDD ≤ 50 V (4)
333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com sales@semicoa.com
Copyright 2012 Rev. 1
TO-254AA Case Outline and Dimensions
Footnotes:
1. Repeve Rang: Pulse width limited by maximum juncon temperature
2. VDD = 25 V starng TJ = 25 °C, L ≥ 200 µH, Peak IL = 34 A
3. ISD ≤ 34 A, di/dt ≤ 70 A/µS, VDD ≤ 100 V, Tj ≤ 150°C, Rg = 2.35 Ω
4. Pulse width ≤ 300 µS; Duty cycle ≤ 2%
Visit us at www.semicoa.com for sales and contact information.
Data and specification subject to change without notice.
SCF2N7224T1
Symbol
Dimensions
Inches Millimeters
Min Max Min Max
BL .535 .545 13.59 13.84
CH .249 .260 6.32 6.60
LD .035 .045 0.89 1.14
LL .510 .570 12.95 14.48
LO .150 BSC 3.81 BSC
LS .150 BSC 3.81 BSC
MHD .139 .149 3.53 3.78
MHO .665 .685 16.89 17.40
TL .790 .800 20.07 20.32
TT .040 .050 1.02 1.27
TW .535 .545 13.59 13.84
Pin Assignment
Term 1 Drain
Term 2 Source
Term 3 Gate
CAUTION BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other op-
erations performed on them which will produce beryllia or beryllium dust. Furthermore,
beryllium oxide packages shall not be placed in acids that will produce fumes containing
beryllium.