Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 4 1Publication Order Number:
MCR100/D
MCR100 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
•Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
•Blocking Voltage to 600 Volts
•On–State Current Rating of 0.8 Amperes RMS at 80°C
•High Surge Current Capability — 10 Amperes
•Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
•Immunity to dV/dt — 20 V/µsec Minimum at 110°C
•Glass-Passivated Surface for Reliability and Uniformity
•Device Marking: Device Type, e.g., MCR100–3, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1)
(TJ =
*
40 to 110°C, Sine W ave, 50 to
60 Hz; Gate Open) MCR100–3
MCR100–4
MCR100–6
MCR100–8
VDRM,
VRRM 100
200
400
600
Volts
On-State RMS Current
(TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine W ave, 60 Hz,
TJ = 25°C)
ITSM 10 Amps
Circuit Fusing Consideration (t = 8.3 ms) I2t 0.415 A2s
Forward Peak Gate Power
(TA = 25°C, Pulse Width
v
1.0 µs) PGM 0.1 Watt
Forward Average Gate Power
(TA = 25°C, t = 8.3 ms) PG(AV) 0.10 Watt
Forward Peak Gate Current
(TA = 25°C, Pulse Width
v
1.0 µs) IGM 1.0 Amp
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width
v
1.0 µs) VGRM 5.0 Volts
Operating Junction Temperature Range
@ Rate VRRM and VDRM TJ–40 to
110 °C
Storage Temperature Range Tstg –40 to
150 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
0.8 AMPERES RMS
100 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
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TO–92 (TO–226AA)
CASE 029
STYLE 10
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MCR100 Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case
— Junction to Ambient RθJC
RθJA 75
200 °C/W
Lead Solder Temperature
(
t
1/16″ from case, 10 secs max) TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(1) TC = 25°C
(VD = Rated VDRM and VRRM; RGK = 1 kΩ)T
C = 110°CIDRM, IRRM —
——
—10
100 µA
ON CHARACTERISTICS
Peak Forward On–State Voltage(*)
(ITM = 1.0 Amp Peak @ TA = 25°C) VTM — — 1.7 Volts
Gate Trigger Current (Continuous dc)(2) TC = 25°C
(VAK = 7.0 Vdc, RL = 100 Ohms) IGT — 40 200 µA
Holding Current(2) TC = 25°C
(VAK = 7.0 Vdc, Initiating Current = 20 mA) TC = –40°CIH—
—0.5
—5.0
10 mA
Latch Current TC = 25°C
(VAK = 7.0 V, Ig = 200 µA) TC = –40°CIL—
—0.6
—10
15 mA
Gate Trigger Voltage (Continuous dc)(2) TC = 25°C
(VAK = 7.0 Vdc, RL = 100 Ohms) TC = –40°CVGT —
—0.62
—0.8
1.2 Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential W aveform, RGK = 1000 Ohms,
TJ = 110°C)
dV/dt 20 35 — V/µs
Critical Rate of Rise of On–State Current
(IPK = 20 A; Pw = 10 µsec; diG/dt = 1 A/µsec, Igt = 20 mA) di/dt — — 50 A/µs
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
(1) RGK = 1000 Ohms included in measurement.
(2) Does not include RGK in measurement.
MCR100 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
Forward Blocking Region
IRRM at VRRM
(off state)
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
100
90
80
70
60
50
40
30
1105035205–10–25–40
GATE TRIGGER CURRENT ( A)
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) 110655035205–10–25–40
0.8
0.7
0.6
0.5
0.4
0.3
GATE TRIGGER VOL TAGE (VOLTS)
0.2
20
10
0.9
1.0
958065
m
9580
MCR100 Series
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4
DC
Figure 3. Typical Holding Current versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
1000
100
110655035205–10–25–40
HOLDING CURRENT ( A)
Figure 4. Typical Latching Current versus
Junction Temperature
10
Figure 5. Typical RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMPS)
120
110
100
90
80
70
60
50
0.50.40.30.20.10
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°
Figure 6. Typical On–State Characteristics
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)3.53.22.32.01.71.41.10.80.5
1
IT, INSTANT ANEOUS ON–STATE CURRENT (AMPS)
0.140
10
9580
m
TJ, JUNCTION TEMPERATURE (°C)
1000
100
110655035205–10–25–40
LATCHING CURRENT ( A)
10 9580
m
30°60°90°120°
180°
2.92.6
MAXIMUM @ TJ = 110°C
MAXIMUM @ TJ = 25°C
MCR100 Series
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5
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A H2A
H
F1 F2
P2 P2
P1 P
D
W
W1
L1
W2
H2B H2B
T1
T
T2
H4 H5
H1
L
Figure 7. Device Positioning on Tape
Specification
Inches Millimeter
Symbol Item Min Max Min Max
DTape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
HBottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
LDefective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
PFeedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
TAdhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
WCarrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 1 1 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
MCR100 Series
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ORDERING & SHIPPING INFORMATION: MCR100 Series packaging options, Device Suffix
U.S. Europe
Equivalent Shipping Description of TO92 Tape Orientation
MCR100–3,4,6,8
MCR100–6RLRA
MCR100–6RLRM MCR100–3RL,6RL,8RL
MCR100–6ZL1
Bulk in Box (5K/Box)
Radial Tape and Reel (2K/Reel)
Radial Tape and Fan Fold Box
(2K/Box)
N/A, Bulk
Round side of TO92 and adhesive tape visible
Flat side of TO92 and adhesive tape visible
MCR100 Series
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7
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
TO–92 (TO–226AA)
CASE 029–11
ISSUE AJ
MCR100 Series
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8
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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “T ypicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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PUBLICATION ORDERING INFORMATION
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Phone: 81–3–5740–2745
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
MCR100/D
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P.O. Box 5163, Denver, Colorado 80217 USA
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