1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
surface-mounted plastic package using TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
PML340SN
N-channel TrenchMOS standard level FET
Rev. 01 — 24 August 2006 Product data sheet
nStandard level threshold nLow profile and small footprint
nVery low thermal impedance nLow on-state resistance
nPrimary side switching nDC-to-DC converters
nVDS ≤220 V nID≤7.3 A
nRDSon ≤386 mΩnQGD = 4.25 nC (typ)
Table 1. Pinning
Pin Description Simplified outline Symbol
1, 2, 3 source (S)
SOT873-1 (HVSON8)
4 gate (G)
5, 6, 7, 8 drain (D)
1234
8765
Transparent
top view
S
D
G
mbb076
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 2 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
PML340SN HVSON8 plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3.3 × 3.3 × 0.85 mm SOT873-1
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °C≤Tj≤150 °C - 220 V
VGS gate-source voltage - ±20 V
IDdrain current Tmb =25°C; VGS = 10 V; see Figure 2 and 3- 7.3 A
Tmb = 100 °C; VGS = 10 V; see Figure 2 - 4.4 A
IDM peak drain current Tmb =25°C; pulsed; tp≤10 µs; see Figure 3 -14A
Ptot total power dissipation Tmb =25°C; see Figure 1 -50W
Tstg storage temperature −55 +150 °C
Tjjunction temperature −55 +150 °C
Source-drain diode
ISsource current Tmb =25°C - 7.6 A
ISM peak source current Tmb =25°C; pulsed; tp≤10 µs - 14 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy unclamped inductive load; ID= 3.5 A;
tp= 0.05 ms; VDS ≤220 V; RGS =50Ω;
VGS = 10 V; starting at Tj=25°C
-22mJ
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 3 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
Fig 1. Normalized total power dissipation as a
function of mounting base temperature Fig 2. Normalized continuous drain current as a
function of mounting base temperature
Tmb =25°C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03ne36
0
40
80
120
0 50 100 150 200
T
mb
(°C)
P
der
(%)
03ne37
0
40
80
120
0 50 100 150 200
T
mb
(°C)
I
der
(%)
Pder Ptot
Ptot 25°C()
------------------------100 %×=Ider ID
ID25°C()
-------------------- 100 %×=
003aab516
10
-1
1
10
10
2
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
DC
1 ms
100 µs
Lim it R
DSon
= V
DS
/ I
D
10 ms
10 µs
t
p
=
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 4 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 2.5 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aab517
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
0.2
0.1
0.05
δ = 0.5
0.02
tpT
P
t
tp
T
δ =
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 5 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID= 250 µA; VGS =0V
Tj=25°C 220 - - V
Tj=−55 °C 196 - - V
VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V
GS; see Figure 9 and 10
Tj=25°C 234V
Tj= 150 °C 1.2 - - V
Tj=−55 °C - - 4.4 V
IDSS drain leakage current VDS = 176 V; VGS =0V
Tj=25°C --1µA
Tj= 150 °C - - 100 µA
IGSS gate leakage current VGS =±20 V; VDS = 0 V - 10 100 nA
RGgate resistance f = 1 MHz - 0.6 - Ω
RDSon drain-source on-state
resistance VGS = 10 V; ID= 2.6 A; see Figure 6 and 8
Tj=25°C - 320 386 mΩ
Tj= 150 °C - 768 927 mΩ
VGS =6V; I
D= 2.5 A - 330 396 mΩ
Dynamic characteristics
QG(tot) total gate charge ID= 2.6 A; VDS = 110 V; VGS =10V;
see Figure 11 and 12 - 13.2 - nC
QGS gate-source charge - 2.5 - nC
QGS1 pre-VGS(th) gate-source charge - 1.72 - nC
QGS2 post-VGS(th) gate-source charge - 0.78 - nC
QGD gate-drain charge - 4.25 - nC
VGS(pl) gate-source plateau voltage - 4.35 - V
Ciss input capacitance VGS =0V; V
DS = 30 V; f = 1 MHz;
see Figure 14 - 656 - pF
Coss output capacitance - 69 - pF
Crss reverse transfer capacitance - 24 - pF
td(on) turn-on delay time VDS = 100 V; RL= 100 Ω; VGS =10V;
RG= 5.6 Ω-9-ns
trrise time - 11.8 - ns
td(off) turn-off delay time - 19.8 - ns
tffall time - 4.5 - ns
Source-drain diode
VSD source-drain voltage IS= 2.8 A; VGS = 0 V; see Figure 13 - 0.8 1.2 V
trr reverse recovery time IS= 3.2 A; dIS/dt = −100 A/µs; VGS =0V;
VR= 120 V - 111 - ns
Qrrecovered charge - 340 - nC
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 6 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
Tj=25°CT
j=25°C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Tj=25°C and 150 °C; VDS >I
D×RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aab163
0
2
4
6
8
10
012345
V
DS
(V)
I
D
(A)
4
5
3.8
V
GS
(V) = 10
4.5
4.4
4.2
003aab164
0
200
400
600
800
0246810
I
D
(A)
R
DSon
(mΩ)
43.8
5
10
V
GS
(V) =
4.54.2
003aab165
0
2
4
6
8
10
012345
V
GS
(V)
I
D
(A)
T
j
= 150 °C25 °C
03al52
0
1
2
3
-60 0 60 120 180
a
T
j
(°C)
aRDSon
RDSon 25°C()
------------------------------
=
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 7 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
ID= 1 mA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature Fig 10. Sub-threshold drain current as a function of
gate-source voltage
ID= 2.6 A; VDS = 110 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values Fig 12. Gate charge waveform definitions
Tj (°C)
−60 180120060
03aa32
2
3
1
4
5
VGS(th)
(V)
0
max
typ
min
03aa35
VGS (V)
0642
10−4
10−5
10−2
10−3
10−1
ID
(A)
10−6
min typ max
003aab166
0
2
4
6
8
10
0481216
Q
G
(nC)
V
GS
(V)
V
DS
= 176 V
110 V
44 V
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 8 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
Tj=25°C and 150 °C; VGS =0V V
GS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aab167
0
2
4
6
8
10
0.2 0.4 0.6 0.8 1
VSD (V)
IS
(A)
Tj = 25 °C
150 °C
003aab168
10
10
2
10
3
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 9 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
7. Package outline
Fig 15. Package outline SOT873-1 (HVSON8)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT873-1
SOT873-1
05-06-16
05-06-21
DIMENSIONS (mm are the original dimensions)
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3.3 × 3.3 × 0.85 mm
- - -- - -- - -
UNIT A
max. A1bc ee
1L1ywv
mm 1 0.05
0.00 0.35
0.25 0.2 3.4
3.2 0.65
1.68
1.58 0.05 0.1
y1
0.10.11.95 0.55
0.45
L2
0.52
0.42
DE
3.4
3.2
DhEh
2.3
2.2
0 1 2 mm
scale
detail X
AA1c
b
e1
eAC B
vMCw M
L1
L2
Eh
Dh
8
41
5
terminal 1
index area
E
terminal 1
index area
D
X
B A
C
y
C
y1
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 10 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
8. Revision history
Table 6. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PML340SN_1 20060824 Product data sheet - -
PML340SN_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 24 August 2006 11 of 12
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
10. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Philips Semiconductors PML340SN
N-channel TrenchMOS standard level FET
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.
Date of release: 24 August 2006
Document identifier: PML340SN_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Contact information. . . . . . . . . . . . . . . . . . . . . 11
11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
