SOT89 NPN SILICON P LANAR
DARLINGTON TRANSIS TOR
ISSUE 3 – JANUARY 1996
FEATURES
* Fast Switching
* High hFE
PARTMAKING DETAIL — AS3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 90 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 10 V
Pea Pulse Current ICM 1.5 A
Continuous Collector Current IC500 mA
Base Curr ent IB100 mA
Power Dissipation at Tamb=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 90 V IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage V(BR)CEO 80 V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage V(BR)EBO 10 V IE=10µA, IC=0
Emitter Cut-Off Current IEBO 10 µAVEB=8V, IE=0
Collector-Emitter
Cut-Off Curre nt ICES 10 µAVCE=80V, IC=0
Collector-Emitter
Saturation Voltage VCE(sat) 1.3
1.3 V
VIC=500mA, IB=0.5mA
IC=500mA, IB=0.5mA
Tj=150°C
Base-Emitter
Saturation Voltage VBE(sat) 1.9 V IC=500mA, IB=0.5mA
Static Forward Current
Transfer Ratio hFE 1K
2K IC=150mA, V CE=10V*
IC=-500mA, VCE=-10V*
Turn On Time ton 400 Typical ns IC=500mA
IBon=IBoff=0.5mA
Turn Off Time toff 1.5K Typical ns
* Measure d under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT614 datasheet.
BST52
C
C
B
E
SOT89
3 - 80
