VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A FEATURES * High voltage * Electrically isolated base plate * 3500 VRMS isolating voltage * Industrial standard package * Simplified mechanical designs, rapid assembly * High surge capability * Large creepage distances * UL approved file E78996 * Compliant to RoHS directive 2002/95/EC MAGN-A-PAK * Designed and qualified for industrial level DESCRIPTION This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. PRODUCT SUMMARY IT(AV) 170 A/250 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS VSK.170.. VSK.250.. 85 C 170 250 377 555 50 Hz 5100 8500 60 Hz 5350 8900 50 Hz 131 361 60 Hz 119 330 1310 3610 IT(RMS) ITSM I2t I2t VDRM/VRRM TJ Document Number: 94417 Revision: 02-Jul-10 Up to 1600 Range Up to 2000 - 40 to 130 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com UNITS A kA2s kA2s V C www.vishay.com 1 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 VSK.170- VSK.250- 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 IRRM/IDRM AT 130 C MAXIMUM mA 50 50 60 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS ITSM t = 8.3 ms t = 10 ms Maximum I2t for fusing 85 85 C 377 555 No voltage reapplied 5100 8500 5350 8900 4300 7150 7500 131 361 119 330 92.5 255 84.4 233 t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 t = 8.3 ms t = 10 ms t = 8.3 ms I2t A 4500 t = 10 ms I2t UNITS 250 As AC switch t = 8.3 ms Maximum I2t for fusing VSK.250 170 180 conduction, half sine wave t = 10 ms Maximum peak, one-cycle on-state non-repetitive, surge current VSK.170 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied Low level value or threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.89 0.97 High level value of threshold voltage VT(TO)2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.12 1.00 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.34 0.60 High level value on-state slope resistance rt2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.96 0.57 ITM = x IT(AV), TJ = TJ maximum, 180 conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.60 1.44 Maximum on-state voltage drop VTM Maximum holding current IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 C 500 500 Maximum latching current IL Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 s, TJ = 25 C 1000 1000 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com A kA2s kA2s V m V mA Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr Typical turn-off time TEST CONDITIONS VSK.170 TJ = 25 C, gate current = 1 A dIg/dt = 1 A/s Vd = 0.67 % VDRM 2.0 ITM = 300 A; dI/dt = 15 A/s; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/s; gate 0 V, 100 tq VSK.250 UNITS 1.0 s 50 to 150 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS 50 60 mA Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 C, 1 s 3000 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/s Critical rate of rise of off-state voltage dV/dt TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 PGM tp 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0 TJ = - 40 C 4.0 Maximum peak gate power Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger VGT IGT TJ = 25 C Anode supply = 12 V, resistive load; Ra = 1 TJ = TJ maximum 2.0 350 TJ = 25 C W A V 3.0 TJ = - 40 C Anode supply = 12 V, resistive load; Ra = 1 mA 200 TJ = TJ maximum 100 UNITS Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating and storage temperature range TEST CONDITIONS VSK.170 TJ, TStg VSK.250 - 40 to 130 C Maximum thermal resistance, junction to case per junction RthJC DC operation 0.17 0.125 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 0.02 K/W MAP to heatsink Mounting torque 10 % busbar to MAP A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. Approximate weight Case style Document Number: 94417 Revision: 02-Jul-10 UNITS 4 to 6 Nm 500 g 17.8 oz. MAGN-A-PAK For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180 120 90 60 30 180 120 90 60 30 VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 DEVICES UNITS K/W Maximum Allowable Case Temperature (C) 130 VSK.170.. Series RthJC (DC) = 0.17 K/W 120 110 Conduction Angle 100 90 30 80 60 90 120 70 180 60 0 40 80 120 160 200 Maximum Average On-state Power Loss (W) Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 300 180 120 90 60 30 250 200 RMS Limit 150 100 Conduction Angle 50 VSK.170.. Series Per Junction TJ = 125C 0 0 Average On-state Current (A) 130 VSK.170.. Series R thJC (DC) = 0.17 K/W 110 Conduction Period 100 90 30 60 90 120 80 70 180 DC 60 0 50 100 150 200 250 300 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics www.vishay.com 4 80 120 160 200 Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Fig. 1 - Current Ratings Characteristics 120 40 Average On-state Current (A) 350 DC 180 120 90 60 30 300 250 200 RMS Limit 150 Conduction Period 100 VSK.170.. Series Per Junction TJ = 125C 50 0 0 50 100 150 200 250 300 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series 5000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4500 4000 3500 3000 2500 VSK.170.. Series Per Junction 2000 1 10 5000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130C No Voltage Reapplied Rated VRRM Reapplied 4500 4000 3500 3000 2500 VSK.170.. Series Per Junction 2000 0.01 100 0.1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 400 =0 W K/ W K/ A R th S 8 0. 0 K/ W .04 K/ W -D 0.3 5 K/W e lt 250 K/ W K/ W 2 0. 3 0. 2 0.1 300 0. 25 W K/ 180 120 90 60 30 350 16 0. aR Maximum Total On-state Power Loss (W) 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) 200 Conduction Angle 150 100 VSK.170.. Series Per Module TJ = 130C 50 0 0 50 100 150 200 250 300 350 400 0 Total RMS Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 7 - On-State Power Loss Characteristics -D e lt a R 100 K/ W K/ W 0.35 2 x VSK.170.. Series Single Phase Bridge Connected TJ = 130C 200 2K /W 0. 2 5K /W 400 300 W K/ 0 .2 . 02 =0 500 A 600 0. 1 6 K/ W W K/ 0.1 180 (Sine) 180 (Rect) K/ W W K/ 700 0. 08 04 0. 1 800 S R th 0. 900 06 0. Maximum Total Power Loss (W) 1000 K/ W 0 0 50 100 150 200 250 Total Output Current (A) 300 0 350 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 8 - On-State Power Loss Characteristics Document Number: 94417 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A 3 x VSK.170.. Series Three Phase Bridge Connected TJ = 130C K/ W 0. 1 2K /W 0. 1 6 K/ W 0.25 K/ W aR 600 200 el t -D 0. 1 800 400 8K /W W K/ 120 (Rect) K/ W .01 0.0 1000 =0 SA R th 1200 W K/ 0. 05 1400 03 0. Maximum Total Power Loss (W) 1600 0 0 100 200 300 400 Total Output Current (A) 500 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) 130 VSK.250.. Series RthJC(DC) = 0.125 K/W 120 110 Conduction Angle 100 90 30 60 80 90 120 70 180 60 0 50 100 150 200 250 300 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Fig. 9 - On-State Power Loss Characteristics 350 180 120 90 60 30 300 250 200 RMS Limit 150 Conduction Angle 100 VSK.250.. Series Per Junction TJ = 130C 50 0 0 Maximum Allowable Case Temperature (C) VSK.250.. Series RthJC (DC) = 0.125 K/W 120 110 Conduction Period 100 90 30 60 90 80 120 180 70 DC 60 0 100 200 300 400 500 Average On-state Current (A) Fig. 11 - Current Ratings Characteristics www.vishay.com 6 100 150 200 250 Fig. 12 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Fig. 10 - Current Ratings Characteristics 130 50 Average On-state Current (A) Average On-state Current (A) 500 DC 180 120 90 60 30 450 400 350 300 250 200 RMS Limit 150 Conduction Period 100 VSK.250.. Series Per Junction TJ = 130C 50 0 0 50 100 150 200 250 300 350 400 Average On-state Current (A) Fig. 13 - On-State Power Loss Characteristics For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series 7500 7000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130C 6500 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6000 5500 5000 4500 VSK.250.. Series Per Junction 4000 3500 1 10 9000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130C No Voltage Reapplied Rated VRRM Reapplied 8000 7000 6000 5000 4000 VSK.250.. Series Per Junction 3000 0.01 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current 700 S R th A /W 5K =0 K/ W W K/ .02 16 K/ W W K/ 0.2 0 0.3 R 300 a K/ W 0.2 5K /W e lt 400 -D Conduction angle 0. 0.0 500 0. 12 180 120 90 60 30 08 600 0. Maximum Total On-state Power Loss (W) 1 Pulse Train Duration (s) K/ W 200 VSK.250.. Series Per Module TJ = 130C 100 0 0 100 200 300 400 500 0 600 Total RMS Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 16 - On-State Power Loss Characteristics A hS =0 . 01 W K/ K/ W -D e lt 0 .1 aR 800 Rt 180 (Sine) 180 (Rect) K/ W /W 2K W K/ 0.0 6 1000 K/ W 03 1200 0. 04 0. 0. 05 0.0 Maximum Total Power Loss (W) 1400 K/ W 0.1 2K /W 0 .16 K/ W 600 400 2 x VSK.250.. Series Single Phase Bridge Connected TJ = 130C 200 0 .3 K /W 0 0 100 200 300 Total Output Current (A) 400 500 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 17 - On-State Power Loss Characteristics Document Number: 94417 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A =0 K/ W 0.1 K/ W 0. 1 2K /W 0.1 6K /W 0.2 0K /W -D e lt aR 3 x VSK.250.. Series Three Phase Bridge Connected TJ = 130C .01 800 200 SA 1000 400 R th 120 (Rect) 600 W K/ K/ W 0 .0 8K /W 1400 1200 K/ W 03 0. 1600 05 W K/ 0. 06 04 0. 1800 0. Maximum Total Power Loss (W) 2000 0.25 K/ W 0 0 100 200 300 400 500 Total Output Current (A) 600 700 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Typical Reverse Recovery Charge - Qrr (C) Fig. 18 - On-State Power Loss Characteristics Tj = 25C Tj = 130C 1000 VSK.170 Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) Fig. 19 - On-State Voltage Drop Characteristics 10000 Instantaneous Forward Current (V) 1800 Tj = 25C Tj = 130C 1000 VSK.250 Series Per Junction 100 VSK.170.. Series TJ = 130 C Per Junction 1600 1400 ITM = 800 A 500 A 1200 300 A 200 A 1000 100 A 800 50 A 600 400 200 0 5 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/s) Fig. 21 - Reverse Recovery Charge Characteristics Typical Reverse Recovery Charge - Qrr (C) Instantaneous Forward Current (V) 10000 2400 VSK.250.. Series 2200 TT ==130 130CC JJ PerJunction Junction 2000 Per ITM = 800 A 500 A 300 A 1800 200 A 1600 100 A 1400 1200 50 A 1000 800 600 400 200 0 10 20 30 40 50 60 70 80 90 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous Forward Voltage (V) Rate Of Fall Of On-state Current - di/dt (A/s) Fig. 20 - On-State Voltage Drop Characteristics Fig. 22 - Reverse Recovery Charge Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1s b) Recommended load line for <=30% rated di/dt : 10V, 20ohms tr<=1 s 10 (1) (2) (3) (4) PGM PGM PGM PGM = = = = 10W, tp = 4ms 20W, tp = 2ms 40W, tp = 1ms 60W, tp = 0.66ms (a) (b) Tj=25 C 1 Tj=-40 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 VSK.170/250 Series 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Transient Thermal Impedance Z thJC (K/W) Fig. 23 - Gate Characteristics 1 Steady State Value: R thJC = 0.17 K/W R thJC = 0.125 K/W 0.1 VSK.170.. Series (DC Operation) VSK.250.. Series 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 24 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VSK T 250 1 2 3 - 20 PbF 4 5 1 - Module type 2 - Circuit configuration (see dimensions - link at the end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - None = Standard production PbF = Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 Document Number: 94417 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 9 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A CIRCUIT CONFIGURATION VSKH... VSKT... VSKL... ~ ~ ~ ~ ~ ~ + + + + + + - - - K1G1 G2 K2 VSKU... K1G1 - Available from 400 V to 1600 V for VSK.170PbF Series, available from 400 V to 2000 V for VSK.250PbF Series VSKV... + + - - - - + + - - K1G1 G2 K2 + + K1G1 G2 K2 Available up to 1200 V, contact factory for different requirement LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 www.vishay.com/doc?95086 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) O 5.5 35 (1.38) 20 (0.79) 80 (3.15) 50 (1.97) 38 (1.5) 6 (0.24) 3 screws M8 x 1.25 28 (1.12) 6 (0.24) 9 (0.35) 10 (0.39) HEX 13 52 (2.04) 51 (2.01) 32 (1.26) 115 (4.53) 92 (3.62) Notes * Dimensions are nominal * Full engineering drawings are available on request * UL identification number for gate and cathode wire: UL 1385 * UL identification number for package: UL 94 V-0 Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000