Document Number: 94417 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
PRODUCT SUMMARY
IT(AV) 170 A/250 A
MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.170.. VSK.250.. UNITS
IT(AV) 85 °C 170 250
A
IT(RMS) 377 555
ITSM
50 Hz 5100 8500
60 Hz 5350 8900
I2t50 Hz 131 361 kA2s
60 Hz 119 330
I2t 1310 3610 kA2s
VDRM/VRRM Up to 1600 Up to 2000 V
TJRange - 40 to 130 °C
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
VSK.170-
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
VSK.250-
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900 60
20 2000 2100
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum average on-state current
at case temperature
IT(AV) 180° conduction, half sine wave 170 250 A
85 85 °C
Maximum RMS on-state current IT(RMS) As AC switch 377 555
A
Maximum peak, one-cycle on-state
non-repetitive, surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
5100 8500
t = 8.3 ms 5350 8900
t = 10 ms 100 % VRRM
reapplied
4300 7150
t = 8.3 ms 4500 7500
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
131 361
kA2s
t = 8.3 ms 119 330
t = 10 ms 100 % VRRM
reapplied
92.5 255
t = 8.3 ms 84.4 233
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA2s
Low level value or threshold voltage VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 0.89 0.97 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.12 1.00
Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 1.34 0.60 m
High level value on-state slope resistance rt2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.96 0.57
Maximum on-state voltage drop VTM
ITM = x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))21.60 1.44 V
Maximum holding current IHAnode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500
mA
Maximum latching current IL
Anode supply = 12 V, resistive load = 1 ,
gate pulse: 10 V, 100 μs, TJ = 25 °C 1000 1000
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VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A Vishay Semiconductors
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Typical delay time tdTJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
Vd = 0.67 % VDRM
1.0
μs
Typical rise time tr2.0
Typical turn-off time tq
ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 50 to 150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum 50 60 mA
RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V
Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 10.0 W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0
Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 A
Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0
V
Maximum required DC gate voltage to trigger VGT
TJ = - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1
4.0
TJ = 25 °C 3.0
TJ = TJ maximum 2.0
Maximum required DC gate current to trigger IGT
TJ = - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1
350
mATJ = 25 °C 200
TJ = TJ maximum 100
Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V
Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA
Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A,
rated VDRM applied 500 A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Junction operating and storage
temperature range TJ, TStg - 40 to 130 °C
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.17 0.125
K/W
Typical thermal resistance,
case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 0.02
Mounting torque ± 10 %
MAP to heatsink A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
4 to 6 Nm
busbar to MAP
Approximate weight 500 g
17.8 oz.
Case style MAGN-A-PAK
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
R CONDUCTION PER JUNCTION
DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
60
70
80
90
100
110
120
130
0 40 80 120 160 200
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
VSK.170.. Series
R
thJC
(DC) = 0.17 K/W
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.170.. Series
R (DC) = 0.17 K/W
thJC
0
50
100
150
200
250
300
040801201602
00
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
VSK.170.. Series
Per Junction
T
J
= 125°C
0
50
100
150
200
250
300
350
0 50 100 150 200 250 300
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.170.. Series
Per Junction
T
J
= 125°C
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Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A Vishay Semiconductors
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
2000
2500
3000
3500
4000
4500
5000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Peak Half Sine Wave On-state Current (A)
VSK.170.. Series
Per Junction
Initial TJ = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial T
J
= 130°C
No Voltage Reapplied
Rated V
RRM
Reapplied
VSK.170.. Series
Per Junction
020406080100120
0.35K/W
0.3K/W
0.25K/W
0.2K/W
0.08K
/W
0.12K/W
0.16K
/W
Maximum Allowable Ambient Temperature (°C)
R=0.04K/W-DeltaR
thS
A
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350 400
180°
120°
90°
60°
30°
Maximum Total On-state Power Loss (W)
Total RMS Output Current (A)
Conduction Angle
VSK.170.. Series
Per Module
T
J
= 130°C
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.02K/W-DeltaR
0.04K/W
thS
A
0.06K/W
0.08K/W
0.1K
/W
0.12K/W
0.16K/W
0.2K/W
0.25K/W
0.35K/W
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x VSK.170.. Series
Single Phase Bridge
Connected
T
J
= 130°C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94417
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Fig. 9 - On-State Power Loss Characteristics
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
Fig. 13 - On-State Power Loss Characteristics
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
0.25K/W
0.16K/W
0.12K/W
0.1K/W
0.08K/W
0.05K/W
0.03K/W
R=0.01K/W-DeltaR
thS
A
0
200
400
600
800
1000
1200
1400
1600
0 100200300400500
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.170.. Series
Three Phase Bridge
Connected
T
J
= 130°C
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
VSK.250.. Series
R
thJC
(DC) = 0.125 K/W
60
70
80
90
100
110
120
130
01002003004005
00
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.250.. Series
R
thJC
(DC) = 0.125 K/W
0
50
100
150
200
250
300
350
050100150200250
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
VSK.250.. Series
Per Junction
T = 130°C
J
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Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A Vishay Semiconductors
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 16 - On-State Power Loss Characteristics
Fig. 17 - On-State Power Loss Characteristics
3500
4000
4500
5000
5500
6000
6500
7000
7500
11010
0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
VSK.250.. Series
Per Junction
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
VSK.250.. Series
Per Junction
Initial T
J
= 130°C
No Voltage Reapplied
Rated V
RRM
Reapplied
020406080100120
Maximum Allowable Ambient Temperature (°C)
0.3K
/W
0.25K/W
0.20K/W
0.16K/W
0.12K/W
0.08K
/W
0.05K/W
R=0.02K/W-DeltaR
thS
A
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
Maximum Total On-state Power Loss (W)
Conduction angle
Total RMS Output Current (A)
VSK.250.. Series
Per Module
T
J
= 130°C
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
thS
A
0.02 K/W
0.03K/W
0.04K/W
0.05K
/W
0.06K
/W
0.1K/W
0.12K/W
0.16K/W
0.3K
/W
0
200
400
600
800
1000
1200
1400
0
100 200 300 400 500
Maximum Total Power Loss (W)
Total Output Current (A)
180°
(Sine)
180°
(Rect)
2 x VSK.250.. Series
Single Phase Bridge
Connected
T
J
= 130°C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94417
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Fig. 18 - On-State Power Loss Characteristics
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 21 - Reverse Recovery Charge Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
0.03K/W
0.04K/W
0.05K/W
0.06K
/W
0.08K/W
0.1K/W
0.12K
/W
0.16K/W
0.20K/W
0.25K
/W
thS
A
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100 200 300 400 500 600 700
Maximum Total Power Loss (W)
Total Output Current (A)
120°
(Rect)
3 x VSK.250.. Series
Three Phase Bridge
Connected
TJ = 130°C
0.511.522.533.544.55
100
1000
10000
Instantaneous Forward Current (V)
Instantaneous Forward Voltage (V)
Tj = 25°C
Tj = 130°C
VSK.170 Series
Per Junction
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
100
1000
10000
Instantaneous Forward Current (V)
Instantaneous Forward Voltage (V)
Tj = 25°C
Tj = 130°C
VSK.250 Series
Per Junction
200
400
600
800
1000
1200
1400
1600
1800
0 102030405060708090100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Typical Reverse Recovery Charge - Qrr (µC)
I
TM
= 800 A
500 A
300 A
200 A
100 A
VSK.170.. Series
T
J
= 130 °C
Per Junction
50 A
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 1020304050607080901
00
Typical Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
500 A
300 A
200 A
100 A
T = 130 °C
Per Junction
JI
TM
= 800 A
50 A
VSK.250.. Series
T
J
= 130 °C
Per Junction
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VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A Vishay Semiconductors
Fig. 23 - Gate Characteristics
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
rated di/dt : 20 V, 10 ohms; tr < =1µs
tr<=1 µs
Rectangular gate pulse
<=30% rated di/dt : 10V, 20ohms
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
VSK.170/250 Series Frequency Limited by PG(AV)
(1) (4)
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
VSK.170.. Series
Steady State Value:
R = 0.17 K/W
R = 0.125 K/W
(DC Operation)
thJC
thJC
Transient Thermal Impedance Z (K/W)
VSK.250.. Series
1- Module type
2- Circuit configuration (see dimensions - link at the end of datasheet)
3- Current rating
4- Voltage code x 100 = VRRM (see Voltage Ratings table)
Device code
51324
VSK T 250 - 20 PbF
5- None = Standard production
PbF = Lead (Pb)-free
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95086
VSKL...
VSKU... VSKV...
VSKH...
VSKT...
Available from 400 V to 1600 V for VSK.170PbF Series,
available from 400 V to 2000 V for VSK.250PbF Series
Available up to 1200 V,
contact factory for different requirement
+
-
~~
+
-
K1G1 G2 K2
+
-
~~
+
-
K1G1
+
-
~~
+
-
-
-
++
-
-
K1G1 G2 K2
+
+
--
+
+
K1G1 G2 K2
Document Number: 95086 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 03-Aug-07 1
MAGN-A-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Ø 5.5
6
(0.24)
38 (1.5)
50 (1.97)
6 (0.24)
115 (4.53)
80 (3.15)
9 (0.35)
20 (0.79)
3 screws M8 x 1.25 35 (1.38) 28 (1.12)
32
(1.26)
HEX 13
10 (0.39)
92 (3.62)
51 (2.01)
52 (2.04)
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.