FDS6670AS
30V N-Channel PowerTrench
SyncFET™
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V
RDS(ON) max= 11.5 m @ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage 20 V
IDDrain Current – Continuous (Note 1a) 13.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
PD
(Note 1c) 1
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 C
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6670AS FDS6670AS 13’’ 12mm 2500 units
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
www.fairchildsemi.com
1
July 2010
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test
Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, Referenced to 25C 27
mV/C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 A
IGSS Gate–Body Leakage VGS = 20 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 3 V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 10 mA, Referenced to 25C –4
RDS(on) Static Drain–Source
On–Resistance
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 11.2 A
VGS=10 V, ID =13.5A, TJ=125C
7.5
9
10
9
11.5
12.5
m
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward
Transconductance VDS = 10 V, ID = 13.5 A 66 S
Dynamic Characteristics
Ciss Input Capacitance
1540 pF
Coss Output Capacitance
440 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
160 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 20 ns
trTurn–On Rise Time 5 10 ns
td(off) Turn–Off Delay Time 27 44 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
18 32 ns
td(on) Turn–On Delay Time 13 23 ns
trTurn–On Rise Time 15 27 ns
td(off) Turn–Off Delay Time 24 38 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
13 23 ns
Qg(TOT) Total Gate Charge at Vgs=10V 27 38 nC
Qg Total Gate Charge at Vgs=5V 16 22 nC
Qgs Gate–Source Charge 4.2 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 13.5 A,
5.1 nC

mV/C
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
Rg4.2
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2
FDS6670AS Rev.C1
2.1
Gate Resistance
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A (Note 2)
VGS = 0 V, IS = 7 A (Note 2)
0.5
0.6
0.7 V
trr Diode Reverse Recovery Time 20 nS
Qrr Diode Reverse Recovery Charge
IF = 13.5A,
diF/dt = 300 A/µs (Note 3) 15 nC
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
3
FDS6670AS Rev.C1
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Typical Characteristics
0
10
20
30
40
50
00.511.52
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
3.0V
2.5V
0.6
1
1.4
1.8
2.2
2.6
0 1020304050
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
6.0V
10V
4.0V
4.5V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50 -25 0 25 50 75 100 125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13.5A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6.75A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
11.522.533.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670AS 30V N-Channel PowerTrench ®
SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
4
FDS6670AS Rev.C1
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Typical Characteristics (continued)
0
2
4
6
8
10
0 5 10 15 20 25 30
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=13.5A V
DS
= 10V
15V
20V
0
600
1200
1800
2400
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 125 °C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
5
FDS6670AS Rev.C1
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6670AS.
Figure 12. FDS6670AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
010 20 30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
100
o
C
25
o
C
125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
CURRENT : 0.4A/div
TIME : 12.5ns/div
CURRENT : 0.4A/div
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
6
FDS6670AS Rev.C1
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I48
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
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FDS6670AS 30V N-Channel PowerTrench® SyncFET™
FDS6670AS Rev.C1
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