MAC228A Series
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
Peak Repetitive Off−State Voltage, (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC228A4
MAC228A6
MAC228A8
MAC228A10
VDRM,
VRRM 200
400
600
800
V
On-State RMS Current, (TC = 80°C) − Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 8.0 A
Peak Non−Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TJ = 110°C)
ITSM 80 A
Circuit Fusing Considerations, (t = 8.3 ms) I2t 26 A2s
Peak Gate Current, (t v 2 ms, TC = 80°C) IGM "2.0 A
Peak Gate Voltage, (t v 2 ms, TC = 80°C) VGM "10 V
Peak Gate Power, (t v 2 ms, TC = 80°C) PGM 20 W
Average Gate Power, (t v 8.3 ms, TC = 80°C) PG(AV) 0.5 W
Operating Junction Temperature Range TJ−40 to 110 °C
Storage Temperature Range Tstg −40 to 150 °C
Mounting Torque −8.0 in lb
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Case RqJC 2.0 °C/W
Thermal Resistance − Junction−to−Ambient RqJA 62.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 110°C
IDRM,
IRRM
−
−
−
−
10
2.0
mA
mA
ON CHARACTERISTICS
Peak On-State Voltage, (ITM = "11 A Peak, Pulse Width v2 ms, Duty Cycle v2%) VTM − − 1.8 V
Gate Trigger Current (Continuous DC), (VD = 12 V, RL = 100 W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
IGT
−
−
−
−
5.0
10
mA
Gate Trigger Voltage (Continuous DC), (VD = 12 V, RL = 100 W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
VGT
−
−
−
−
2.0
2.5
V
Gate Non−Trigger Voltage (Continuous DC), (VD = 12 V, TC = 110°C, RL = 100 W)
All Four Quadrants
VGD 0.2 − − V
Holding Current, (VD = 12 Vdc, Initiating Current = "200 mA, Gate Open) IH− − 15 mA
Gate−Controlled Turn−On Time, (VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA) tgt −1.5 −ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage,
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
dv/dt −25 −V/ms
Critical Rate of Rise of Commutation Voltage, (VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c) −5.0 −V/ms