ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE
=
4500
V
IC
=
150
A
Doc. No. 5SYA 1593-04 07-2013
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Collector-emitter voltage
VCES
VGE = 0 V
4500
V
DC collector current
IC
Tc = 80 °C
150
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
300
A
Gate-emitter voltage
VGES
-20
20
V
Total power dissipation
Ptot
Tc = 25 °C, per switch (IGBT)
1450
W
DC forward current
IF
150
A
Peak forward current
IFRM
300
A
Surge current
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
1400
A
IGBT short circuit SOA
tpsc
VCC = 3400 V, VCEM CHIP 4500 V
VGE 15 V, Tvj 125 °C
10
µs
Isolation voltage
Visol
RMS, 1 min, f = 50 Hz
7400
V
Junction temperature
Tvj
125
°C
Junction operating temperature
Tvj(op)
-50
125
°C
Case temperature
Tc
-50
125
°C
Storage temperature
Tstg
-50
125
°C
Mounting torques 2)
Ms
Base-heatsink, M6 screws
4
6
Nm
Mt1
Main terminals, M6 screws
4
6
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPakTM
IGBT Module
5SNG 0150P450300
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1593-04 07-2013 page 2 of 9
IGBT characteristic values 3)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
4500
V
Collector-emitter 4)
saturation voltage
VCE sat
IC = 150 A, VGE = 15 V
Tvj = 25 °C
2.75
V
Tvj = 125 °C
3.5
V
Collector cut-off current
ICES
VCE = 4500 V, VGE = 0 V
Tvj = 25 °C
2
mA
Tvj = 125 °C
6
20
mA
Gate leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 125 °C
-500
500
nA
Gate-emitter threshold voltage
VGE(TO)
IC = 40 mA, VCE = VGE, Tvj = 25 °C
5.5
6.2
7.5
V
Gate charge
Qge
IC = 150 A, VCE = 2800 V,
VGE = -15 V .. 15 V
1360
nC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
17.5
nF
Output capacitance
Coes
1.21
Reverse transfer capacitance
Cres
0.32
Turn-on delay time
td(on)
VCC = 2800 V,
IC = 150 A,
RG = 15 ,
VGE = 15 V,
L = 400 nH, inductive load
Tvj = 25 °C
530
ns
Tvj = 125 °C
510
Rise time
tr
Tvj = 25 °C
120
ns
Tvj = 125 °C
130
Turn-off delay time
td(off)
VCC = 2800 V,
IC = 150 A,
RG = 15 ,
VGE = 15 V,
L = 400 nH, inductive load
Tvj = 25 °C
1500
ns
Tvj = 125 °C
1720
Fall time
tf
Tvj = 25 °C
400
ns
Tvj = 125 °C
590
Turn-on switching energy
Eon
VCC = 2800 V, IC = 150 A,
VGE = ±15 V, RG = 15 ,
L = 400 nH, inductive load
Tvj = 25 °C
415
mJ
Tvj = 125 °C
580
Turn-off switching energy
Eoff
VCC = 2800 V, IC = 150 A,
VGE = ±15 V, RG = 15 ,
L = 400 nH, inductive load
Tvj = 25 °C
440
mJ
Tvj = 125 °C
615
Short circuit current
ISC
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 3400 V, VCEM CHIP ≤ 4500 V
660
A
Module stray inductance
L DC
between C1 – E2
125
nH
Resistance, terminal-chip
RCC’+EE’
between C1 – E2
TC = 25 °C
0.78
mΩ
TC = 125 °C
1.03
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1593-04 07-2013 page 3 of 9
Diode characteristic values 5)
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward voltage 6)
VF
IF = 150 A
Tvj = 25 °C
3.2
V
Tvj = 125 °C
3.45
Reverse recovery current
Irr
VCC = 2800 V,
IF = 150 A,
VGE = 15 V,
RG = 15
L = 400 nH
inductive load
Tvj = 25 °C
270
A
Tvj = 125 °C
305
Recovered charge
Qrr
Tvj = 25 °C
140
µC
Tvj = 125 °C
235
Reverse recovery time
trr
Tvj = 25 °C
780
ns
Tvj = 125 °C
1330
Reverse recovery energy
Erec
Tvj = 25 °C
205
mJ
Tvj = 125 °C
385
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Package properties 7)
Parameter
Symbol
Conditions
min
typ
max
Unit
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.062
K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.122
K/W
IGBT thermal resistance 2)
case to heatsink
Rth(c-s)IGBT
IGBT per switch, grease = 1W/m x K
0.048
K/W
Diode thermal resistance 7)
case to heatsink
Rth(c-s)DIODE
Diode per switch, grease = 1W/m x K
0.096
K/W
Partial discharge extinction
voltage
Ve
f = 50 Hz, QPD 10pC (acc. to IEC 61287)
3500
V
Comparative tracking index
CTI
600
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties 7)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dimensions
L x W x H
Typical , see outline drawing
73 x 140 x 48
mm
Clearance distance in air
da
according to IEC 60664-1
and EN 50124-1
Term. to base:
35
mm
Term. to term:
19
Surface creepage distance
ds
according to IEC 60664-1
and EN 50124-1
Term. to base:
64
mm
C1 to E1:
54
C1 to E2:
78
Mass
m
620
g
7) Package and mechanical properties according to IEC 60747 – 15
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1593-04 07-2013 page 4 of 9
Electrical configuration
1
2
3
4
5
6
7
8
C1
C2 / E1
E2
C1
G1
E1
G2
E2
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1593-04 07-2013 page 5 of 9
0
50
100
150
200
250
300
0 1 2 3 4 5 6
VCE [V]
IC [A]
125 °C
25 °C
VGE = 15V
0
50
100
150
200
250
300
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
VGE [V]
IC [A]
VCE = 25 V
125 °C
25 °C
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
0
50
100
150
200
250
300
0 1 2 3 4 5
VCEsat [V]
IC [A]
9 V
11 V
13 V
15 V
17 V
Tvj = 25 °C
0
50
100
150
200
250
300
0 1 2 3 4 5 6
VCEsat [V]
IC [A]
9 V
11 V
13 V
15 V
17 V
Tvj = 125 °C
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1593-04 07-2013 page 6 of 9
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
050 100 150 200 250 300 350
IC [A]
Eon, Eoff [J]
VCC = 2800 V
RG = 15 ohm
VGE = ±15 V
Tvj = 125 °C
L = 400 nH
Eon
Eoff
Esw [J] = 8.5 x 10-6 x IC2 + 5.6 x 10-3 x IC + 0.14
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
020 40 60 80
RG [ohm]
Eon, Eoff [J]
VCC = 2800 V
IC = 150 A
VGE = ±15 V
Tvj = 25 °C
L = 400 nH
Eon
Eoff
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
0.01
0.1
1
10
050 100 150 200 250 300 350
IC [A]
td(on), tr, td(off), tf [µs]
VCC = 2800 V
RG = 15 ohm
VGE = ±15 V
Tvj = 125 °C
L = 400 nH
td(on)
td(off)
tf
tr
0.01
0.1
1
10
010 20 30 40 50 60 70 80
RG [ohm]
td(on), tr, td(off), tf [µs]
VCC = 2800 V
IC = 150 A
VGE = ±15 V
Tvj = 25 °C
L = 400 nH
td(on)
td(off)
tr
tf
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1593-04 07-2013 page 7 of 9
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2
Qg [µC]
VGE [V]
VCC = 3600 V
IC = 150 A
Tvj = 25 °C
VCC = 2800 V
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
01000 2000 3000 4000 5000
VCE [V]
ICpulse / IC
Chip
Module
VCC 3400 V, Tvj = 125 °C, VGE = ±15 V
RGoff = 15 ohm, L
400 nH
Fig. 11
Turn-off safe operating area (RBSOA)
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1593-04 07-2013 page 8 of 9
0
100
200
300
400
500
600
0 50 100 150 200 250 300 350
IF [A]
Erec [mJ], Irr
[A], Qrr [µC]
Erec
Irr
Qrr
VCC = 2800 V
RG = 15 ohm
Tvj = 125 °C
L = 400 nH
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0500 1000 1500 2000 2500
di/dt [A/µs]
Erec [J]
0
50
100
150
200
250
300
350
400
450
Irr [A], Qrr [µC]
RG = 10 ohm
RG = 15 ohm
RG = 22 ohm
RG = 33 ohm
RG = 47 ohm
RG = 68 ohm
VCC = 2800 V
IF = 150 A
Tvj = 125 °C
L = 400 nH
Erec
Irr
Qrr
Fig. 12
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
0
50
100
150
200
250
300
0 1 2 3 4 5
VF [V]
IF [A]
125 °C
25 °C
0
50
100
150
200
250
300
350
400
01000 2000 3000 4000 5000
VR [V]
IR [A]
VCC 3400 V
di/dt 2500 A/µs
Tvj = 125 °C
L 400 nH
Fig. 14
Typical diode forward characteristics,
chip level
Fig. 15
Safe operating area diode (SOA)
5SNG 0150P450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1593-04 07-2013
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Zth(j-c) [K/W] IGBT, DIODE
t [s]
Zth(j-c) IGBT
Zth(j-c) Diode
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth
i
i
1
2
3
4
5
IGBT
Ri(K/kW)
41.2
13.68
6.72
i(ms)
192.6
21.4
2.78
DIODE
Ri(K/kW)
80
28.04
13.84
i(ms)
191.5
22.6
3.1
Fig. 16
Thermal impedance vs time
For detailed information refer to:
5SYA 2042 Failure rates of HiPak modules due to cosmic rays
5SYA 2043 Load – cycle capability of HiPaks
5SYA 2045 Thermal runaway during blocking
5SYA 2058 Surge currents for IGBT diodes
5SZK 9120 Specification of environmental class for HiPak