CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 V
V
RMS
24 31 35 42 63 70 V
V
DC
35 45 50 60 90 100 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1309035 Version: G13
Storage temperature range
I
R
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
1
1
- 55 to +150
10
Voltage rate of change,(Rated V
R
)10,000
Taiwan Semiconductor
Typical thermal resistance 1.2
Operating junction temperature range - 55 to +150
Maximum instantaneous forward voltage (Note 2)
I
F
=30A, T
J
=25℃
I
F
=30A, T
J
=125℃
I
F
=60A, T
J
=25℃
V
F
mA
30 20
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃
V
0.70 0.75 0.84
0.60 0.65 -
0.82 0.93 0.98
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
420 A
Peak repetitive reverse surge Current (Note 1)
Maximum DC blocking voltage
Maximum average forward rectified current 60
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz) I
FRM
60
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque: 10 in-lbs maximum
Weight: 6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
MBR
6035
PT
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Polarity: As marked
MBR
60100
PT
MBR6035PT thru MBR60100PT
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MBR
6045
PT
MBR
6050
PT
MBR
6060
PT
MBR
6090
PT
TO-247AD (TO-3P)
PART NO.
PART NO.
MBR6060PT
MBR6060PT
MBR6060PT
(TA=25℃ unless otherwise noted)
Document Number: DS_D1309035 Version: G13
MBR6060PTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
MBR6060PT C0 C0
MBR6060PT C0G C0 G Green compound
Note 1: "xx" defines voltage from 35V (MBR6035PT) to 100V (MBR60100PT)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBR60xxPT
(Note 1) Prefix "H" C0 Suffix "G" TO-3P 30 / Tube
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
0
15
30
45
60
75
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
100
200
300
400
500
600
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
TJ=25℃
MBR6035PT-MBR6045PT
MBR6050PT-MBR60100PT
TJ=75℃
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=125℃
TJ=125℃
Pulse Width=300μs
1% Duty Cycle
MBR6050PT-60100PT
MBR6035PT-6045PT
TJ=25℃
MBR6035PT-6045PT
MBR6050PT-60100PT
TJ=25℃
CREAT BY ART
Min Max Min Max
A 15.90 16.40 0.626 0.646
B 7.90 8.20 0.311 0.323
C 5.70 6.20 0.224 0.244
D 20.80 21.30 0.819 0.839
E 3.50 4.10 0.138 0.161
F 19.70 20.20 0.776 0.795
G - 4.30 - 0.169
H 2.90 3.40 0.114 0.134
I 1.93 2.18 0.076 0.086
J 2.97 3.22 0.117 0.127
K 1.12 1.22 0.044 0.048
L 5.20 5.70 0.205 0.224
M 4.90 5.16 0.193 0.203
N 2.70 3.00 0.106 0.118
O 0.51 0.76 0.020 0.030
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1309035 Version: G13
MARKING DIAGRAM
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vsig=50mVp-p
MBR6035PT-MBR6045PT
MBR6050PT-MBR6060PT
MBR6090PT-MBR60100PT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION (sec)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309035 Version: G13
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
