June 2007 Rev 3 1/9
9
Table 1. Devices summary
Order code Marking Package Packaging
2N5191 2N5191 SOT-32 Tube
2N5192 2N5192 SOT-32 Tube
2N5191
2N5192
NPN power transistors
Features
NPN transistors
Applications
Linear and switching industrial equipment
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type of 2N5192 is 2N5195.
Figure 1. Internal schematic diagram
321
SOT-32
www.st.com
Electrical ratings 2N5191 2N5192
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1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
2N5191 2N5192
VCBO Collector-base voltage (IE = 0) 60 80 V
VCEO Collector-base voltage (IB = 0) 60 80 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 4 A
ICM Collector peak current 7 A
IBBase current 1 A
PTOT Total dissipation at Tcase = 25°C 40 W
Tstg Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
2N5191 2N5192 Electrical characteristics
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2 Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300 µs, duty cycle 1.5%
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0) VCB = rated VCBO 0.1 mA
ICEX
Collector cut-off current
(VBE = -1.5V)
VCE = rated VCEO
VCE = rated VCEO Tc=125°C
0.1
2
mA
mA
ICEO
Collector cut-off current
(IB = 0) VCE = rated VCEO 1mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5V 1mA
VCEO(sus) (1) Collector-emitter
sustaining voltage
(IB = 0)
IC =100mA
for 2N5191
for 2N5192
60
80
V
V
VCE(sat) (1) Collector-emitter
saturation voltage
IC = 1.5A _ IB = 0.15A
IC = 4A _ IB = 1A
0.6
1.4
V
V
VBE (1) Base-emitter voltage IC = 1.5A _ _ VCE = 2V 1.2 V
hFE DC current gain
IC = 1.5A _ _ VCE =2V
for 2N5191
for 2N5192
IC =4A VCE =2V
for 2N5191
for 2N5192
25
20
10
7
100
80
Electrical characteristics 2N5191 2N5192
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2.1 Electrical characteristic (curves)
Figure 2. DC current gain Figure 3. DC current gain
Figure 4. Collector-emitter saturation
voltage
Figure 5. Base-emitter saturation
voltage
Figure 6. Base-emitter on voltage
Figure 7. Resistive load switching time
2N5191 2N5192 Electrical characteristics
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2.2 Test circuit
Figure 9. Resistive load switching test circuit
Figure 8. Resistive load switching time
1) Fast electronic switch
2) Non-inductive resistor
Package mechanical data 2N5191 2N5192
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3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
2N5191 2N5192 Package mechanical data
7/9
DIM. mm.
MIN. TYP MAX.
A2.4 2.9
B 0.64 0.88
B1 0.39 0.63
D 10.5 11.05
E7.4 7.8
e 2.04 2.29 2.54
e1 4.07 4.58 5.08
L15.3 16
P2.9 3.2
Q3.8
Q1 1 1.52
H2 2.15
I1.27
SOT-32 (TO-126) MECHANICAL DATA
0016114E
Revision history 2N5191 2N5192
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4 Revision history
Table 4. Revision history
Date Revision Changes
01-Dec-2000 1 Initial release.
14-Jan-2004 2 Technical migration from ST-Press to EDOCS
28-Jun-2007 3 Figures 2,3,4,5,6,7, 8 and figure 9 have been added.
2N5191 2N5192
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