3.4 +0.3
-0.1 0.4±0.1
φ1.5±0.1
Cathode indif i ca tion
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BL
BLGALAXY ELECTRICAL
Document Number 02680231.
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
Weight: 0.031 grams
M AXIM UM RAT ING S AND EL ECTRICAL CHARACTERISTICS
Ratings at ２５ ambient temperature unless otherwise speci
f
ied.
MAXIMUM RATINGS
UNITS
Rev ers e v oltage VR V
Peak reverse voltage VRM V
Average forw ard rectified current
half w ave rectification w ith resistive load
VR=0V
Forw ard surge current @ tP=1µ s IFSM A
Pow er dissipation @ TA=２５ Ptot mW
Junction temperature TJ
Storage temperature range TSTG
EL ECTRICAL CHAR ACTERIST IC S
UNITS
Forw ard voltage @ IF=50mA VF V
Leakage current
@ VR=50V IR nA
@ VR=50V TJ=150IR μA
Capacitance @ VR=0V,f=1MHz,VHF=50mV CJ pF
Reverse breakdown voltage
tested with 5μA pulses
Reverse recovery time
from IF=10mA to IR=10mA to IR=1mA ns
from IF=10mA to IR=1mA, VR=6V. RL=100Ω.
ns
Thermal resistance junction to ambient RθJA K/W
Rectification efficiency @ 100MHz,VRF=2V ηv
-
GALAXY ELECTRICAL
trr - -
MIN TYP
1501)
175
-55 --- +175
1)Valid provided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
4
2
V(BR)R
75.0 - -
0.45 - -
5001)
MAX
2.0
- -
-
-
IF(AV)
2.0
5001)
mA
- 0.8 1.0
-
LL4151
M ECHANICAL DATA
SMAL L SIGNAL SWITCHING DIO D E
Case: MINI-MELF,glass case
REVERSE VOLTAGE : 50 V
CURRENT: 0 .1 5 A
Polarity: Color band denotes cathode
MINI-MELF
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
-
50
50
V
LL4151
50
75
10S
1
10
100
V=tp/T
0.1
A
-1
10
IFRM
tp
-2
10
-3
10
-5
10
n=0
0.1
0.2
0.5
T=1/fp
tp IFRM
T
-4
10 1
TJ=100
TJ=25
-2
10
-1
10
1
10
3
10
mA
IF
VF
2
10
01 2V
200
400
600
800
0 100 200℃
1000
100
300
700
500
900
0
mW
Ptot
TA
BLGALAXY ELECTRICAL
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Document Number 0268023
2.
FIG.1 -- ADMIS SIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS
RATINGS AND CHARACTERISTIC CURVES LL4151
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
VO
5K2nFVRF=2V
D.U.T.
60
BLGALAXY ELECTRICAL
www.galaxycn.com
Document Number 0268023 3.
1.1
1.0
0.8
0.9
0.7
024681 0V
TJ=25
f=1MHz
Ctot(OV)
VR
Ctot(VR)
0 200℃
10
1
nA
3
10
2
10
4
10
VR=50V
100
10
TJ=25℃
f=1MHz
mA
1 -1
10
-2
10
rF
IF
101 2
10
2
10
3
10
4
10
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ VOLTAGE
RATINGS AND CHARACTERISTIC CURVES LL4151
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
