© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 4
1Publication Order Number:
MBR3045WT/D
MBR3045WT
SWITCHMODEt
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
•Dual Diode Construction; Terminals 1 and 3 may be Connected for
Parallel Operation at Full Rating
•Guardring for Stress Protection
•Low Forward Voltage
•175°C Operating Junction Temperature
•Popular TO−247 Package
•Pb−Free Package is Available*
Mechanical Characteristics
•Case: Epoxy, Molded
•Weight: 4.3 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR, TC = 105°C) Per Device
Per Diode
IF(AV)
30
15
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz)
Per Diode
IFRM 30 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM 200 A
Peak Repetitive Reverse Current (2.0 ms,
1.0 kHz) Per Diode (See Figure 6)
IRRM 2.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk) 175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−247
CASE 340L
PLASTIC
2
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
1
3
2
4
3
Device Package Shipping
ORDERING INFORMATION
MBR3045WT TO−247 30 Units/Rail
MBR3045WTG TO−247
(Pb−Free)
30 Units/Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
MBR3045WT
AYWWG
MBR3045WT
http://onsemi.com
2
THERMAL CHARACTERISTICS (Per Diode)
Rating Symbol Max Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
1.4
40
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
(iF = 20 Amps, TC = 125°C)
(iF = 30 Amps, TC = 125°C)
(iF = 30 Amps, TC = 25°C)
vF
0.6
0.72
0.76
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
100
1.0
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
0.1
VR, REVERSE VOLTAGE (VOLTS)
200
0.1
0.01
100.2
, INSTANTANEOUS FORWARD CURRENT (AMPS)iF
0.4 0.6
100
5.0 50
1.0
0.8 1.4
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
15 3025 35
50
30
20
, REVERSE CURRENT (mA)IR
100
10
1.0 1.2
1.0
5.0
3.0
2.0
0.5
0.3
0.2
TJ = 150°C25°C
40 45
TJ = 150°C
25°C
125°C
100°C
75°C
MBR3045WT
http://onsemi.com
3
7060
TC, CASE TEMPERATURE (°C)
15
10
5.0
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
200
20
10
5.0
0
1080
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
90 110100
20
5.0 40
15
PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
120 140130
Figure 3. Current Derating (Per Leg) Figure 4. Forward Power Dissipation (Per Leg)
15 3025 35
dc
SQUARE
WAVE
(CAPACITIVELOAD)
IPK
IAV
+20, 10, 5
0.10.05
VR, REVERSE VOLTAGE (VOLTS)
1000
700
600
400
300
0.2
C, CAPACITANCE (pF)
0.5 2.01.0
3000
5.0 5010
Figure 5. Capacitance
500
2000
900
800
Figure 6. Test Circuit for Repetitive Reverse
Current
2.0 ms
1.0 kHz
12 V 100
VCC 12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100 W
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 kW
+150 V, 10 mAdc
4.0 mF
+
20
SINE WAVE
RESISTIVE LOAD
TJ = 125°C
160150
dc
SQUARE
WAVE
(CAPACITIVELOAD)
IPK
IAV
+20, 10, 5
IPK
IAV
+p(RESISTIVELOAD)
MBR3045WT
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
N
P
A
K
W
F
D
G
U
E
0.25 (0.010) MYQ S
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
−Q−
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
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MBR3045WT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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