MBR3045WT SWITCHMODEt Power Rectifier These state-of-the-art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com * Dual Diode Construction; Terminals 1 and 3 may be Connected for * * * * * SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS Parallel Operation at Full Rating Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Popular TO-247 Package Pb-Free Package is Available* Mechanical Characteristics 1 2 3 4 * Case: Epoxy, Molded * Weight: 4.3 Grams (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds 1 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 105C) Per Device Per Diode IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Per Diode (See Figure 6) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature (Note 1) TJ -65 to +175 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms March, 2010 - Rev. 4 TO-247 CASE 340L PLASTIC 3 MARKING DIAGRAM A 30 15 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2010 2 1 MBR3045WT AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION Device MBR3045WT MBR3045WTG Package Shipping TO-247 30 Units/Rail TO-247 (Pb-Free) 30 Units/Rail Publication Order Number: MBR3045WT/D MBR3045WT THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol Max Unit RqJC RqJA 1.4 40 C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) (iF = 20 Amps, TC = 125C) (iF = 30 Amps, TC = 125C) (iF = 30 Amps, TC = 25C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR V 0.6 0.72 0.76 mA 100 1.0 100 50 30 20 100 TJ = 150C 10 IR , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 25C 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TJ = 150C 125C 10 100C 1.0 75C 0.1 25C 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5.0 10 15 20 25 30 35 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 45 50 20 I PK + p(RESISTIVELOAD) I AV 15 SQUARE WAVE 10 dc 5.0 I (CAPACITIVELOAD) PK + 20, 10, 5 I AV 0 60 70 80 90 100 110 120 130 140 150 160 TC, CASE TEMPERATURE (C) PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) MBR3045WT 20 I (CAPACITIVELOAD) PK + 20, 10, 5 I SINE WAVE RESISTIVE LOAD AV 15 SQUARE WAVE 10 dc TJ = 125C 5.0 0 0 Figure 3. Current Derating (Per Leg) 5.0 10 15 20 25 30 35 Figure 4. Forward Power Dissipation (Per Leg) +150 V, 10 mAdc 2.0 kW 3000 VCC C, CAPACITANCE (pF) 2000 12 Vdc D.U.T. 12 V 100 2N2222 1000 900 800 700 600 500 + 4.0 mF 2.0 ms 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 400 100 W CARBON 2N6277 1.0 CARBON 300 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 40 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 50 1N5817 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance Figure 6. Test Circuit for Repetitive Reverse Current http://onsemi.com 3 MBR3045WT PACKAGE DIMENSIONS TO-247 CASE 340L-02 ISSUE E -T- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C -B- E U N L 4 A -Q- 1 2 0.63 (0.025) 3 M T B M P -Y- K F 2 PL W J M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 H G D 3 PL 0.25 (0.010) DIM A B C D E F G H J K L N P Q U W S SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR3045WT/D