BCX55
BCX55-10
BCX55-16
NPN
Plastic-Encapsulate
Transistors
Features
x Power Dissipation: PCM=0.5W (Tamb=25к)
x Collector Current: ICM=1.0A
x Collector-Base Voltage: V(BR)CBO=60V
x Marking : BCX55=BE, BCX55-10=BG, BCX55-16=BM
Maximum Ratings
Symbol Rating Value Unit
ICCollector Current DC 1.0 A
PCCollector Power Dissipation 0.5 W
TJJunction Temperature
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
(IC=100uA, IE=0)
(IC=10mA, IB=0)
(IE=10uA, IC=0)
ICBO Collector Cutoff Current
(VCB=30V, IE=0)
IEBO Emitter Cutoff Current
(VEB=5.0V, IC=0)
hFE(1) DC Current Gain
(VCE=2.0V, IC=150mA) BCX55
BCX55-10
BCX55-16
63
63
100
---
---
---
250
160
250
---
hFE(2) DC Current Gain
(VCE=2.0V, IC=5.0mA)
hFE(3) DC Current Gain
(VCE=2.0V, IC=500mA)
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mA,IB=50mA)
VBE(on) Base-Emitter Voltage
(IC=500mA, VCE=2.0V)
fTTransition Frequency
(VCE=10V, IC=50mA,
f=100MHz) 130 --- --- MHz
omponents
20736 Marilla Street Chatsworth
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MCC
-55 to +150 OC
60 --- --- V
60 --- --- V
5 --- --- V
Range
Range
40
--- ---
--- ---
--- ---
--- ---
25
0.1
0.1
0.5
1V
V
uA
uA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
60
60
5
V
V
V
B
A
E
D
GH
F
K
J
C
12 312 3
2:Collector
1:Base1:Base
3:Emitter
25
1.55
.061 REF.
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1 SOT-89
TM
Micro Commercial Components
Revision: B 2013/01/01
www.mccsemi.com
1 of 3
Halogen free available upon request by adding suffix "-HF"
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