2007-04-27
1
BCP49
NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
123
4
EHA00009
B(1)
E(3)
C(2,4)
Type Marking Pin Configuration Package
BCP49 BCP 49 1 = B 2 = C 3 = E 4 = C SOT223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 60 V
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 10
DC collector current IC500 mA
Peak collector current ICM 800 mA
Base current IB100
Peak base current IBM 200
Total power dissipation, TS = 124 °C Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS ≤17 K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
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BCP49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 60 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 V(BR)CBO 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 10 - -
Collector cutoff current
VCB = 60 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 60 V, IE = 0 , TA = 150 °C ICBO - - 10 µA
Emitter cutoff current
VEB = 5 V, IC = 0 IEBO - - 100 nA
DC current gain 1)
IC = 100 µA, VCE = 1 V hFE 2000 - - -
DC current gain 1)
IC = 10 mA, VCE = 5 V hFE 4000 - -
DC current gain 1)
IC = 100 mA, VCE = 5 V hFE 10000 - -
DC current gain 1)
IC = 500 mA, VCE = 5 V hFE 2000 - -
1) Pulse test: t ≤ 300µs, D = 2%
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BCP49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA VCEsat - - 1 V
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA VBEsat - - 1.5
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 6.5 - pF
1) Pulse test: t ≤ 300µs, D = 2%
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BCP49
Collector cutoff current ICBO = f (TA)
VCB = VCEmax
0
10
EHP00251BCP 29/49
A
T
150
0
4
10
Ι
CBO
nA
50 100
1
10
2
10
3
10
˚C
max
typ
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
150
300
450
600
750
900
1050
1200
1350
mW
1650
Ptot
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00252BCP 29/49
03
10mA
1
10
3
10
5
10
1
10
2
10
2
C
T
fMHz
Ι
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00253BCP 29/49
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
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BCP49
DC current gain hFE = f (IC)
VCE = 5V
10
EHP00255BCP 29/49
-1 3
10mA
3
10
6
10
5
5
10
0
10
1
10
4
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 1000
0
10
EHP00256BCP 29/49
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 1000
0
10
EHP00258BCP 29/49
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 20 24 28 V34
VCB0(VEB
0
0
20
40
60
80
100
120
pF
160
CCB0(CEB0)
CCB
CEB
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BCP49
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7
±0.3
B0.25
M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
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BCP49
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
